BCW66GLT1

BCW66GLT1 General Purpose Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 75 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 800 mAdc Collector Current − Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 EMITTER 3 SOT−23 CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C MARKING DIAGRAM EG M Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 556 °C/W 300 2.4 mW mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C RJA PD EG M ORDERING INFORMATION Device 1. FR−5 = 1.0
0.75
0.062 in. 2. Alumina = 0.4
0.3
0.024 in 99.5% alumina. = Specific Device Code = Date Code BCW66GLT1 BCW66GLT1G Package Shipping† SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. 0 1 Publication Order Number: BCW66GLT1/D BCW66GLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 45 − − Vdc Collector −Emitter Breakdown Voltage (IC = 10 Adc, VEB = 0) V(BR)CES 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 − − Vdc − − − − 20 20 nAdc Adc − − 20 nAdc 50 110 160 60 − − − − − − 400 − − − 0.7 0.3 − − − − 2.0 fT 100 − − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 80 pF Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k
, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Turn−On Time (IB1 = IB2 = 15 mAdc) ton − − 100 ns Turn−Off Time (IC = 150 mAdc, RL = 150
) toff − − 400 ns OFF CHARACTERISTICS Collector Cutoff Current (VCE = 45 Vdc, IE = 0) (VCE = 45 Vdc, IE = 0, TA = 150°C) ICES Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS hFE DC Current Gain (IC = 100 Adc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS http://onsemi.com 2 BCW66GLT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm 
inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BCW66GLT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. BCW66GLT1/D