BCW68G
PNP General-Purpose Amplifier
Description
C
This device is designed for general-purpose amplifier
and switching applications at currents to 500 mA.
Sourced from process 63.
E
SOT-23
Mark: DG
B
Ordering Information
Part Number
Marking
Package
Packing Method
BCW68G
DG
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
-45
V
VCBO
Collector-Base Voltage
-60
V
VEBO
Emitter-Base Voltage
IC
TJ , TSTG
Collector Current - Continuous
Junction and Storage Temperature Range
-5
V
-800
mA
-55 to +150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
www.fairchildsemi.com
1
BCW68G — PNP General-Purpose Amplifier
March 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
350
mW
Derate Above TA = 25°C
2.8
mW/°C
Thermal Resistance, Junction to Ambient
357
°C/W
Note:
3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
Parameter
Conditions
Min.
Max.
Unit
V(BR)CES
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
Collector-Emitter Breakdown Voltage IC = -10 μA
V(BR)CBO
Collector-Base Breakdown Voltage
IC = -100 μA, IE = 0
-60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5.0
V
ICES
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
hFE
DC Current Gain
-45
V
-60
V
VCE = -45 V
-20
nA
VCE = -45V, TA = 150°C
-10
μA
-20
nA
VEB = -4.0 V
IC = -10 mA, VCE = -1.0 V
120
IC = -100 mA, VCE = -1.0 V
160
IC = -300 mA, VCE = -1.0 V
60
400
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -300 mA, IB = -30 mA
-1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = -500 mA, IB = -50 mA
-2.0
V
Current Gain - Bandwidth Product
IC = -20 mA, VCE = -10 V,
f = 100 MHz
Cob
Output Capacitance
VCB = -10 V, IE = 0,
f = 1.0 MHz
18
pF
Cib
Input Capacitance
VEB = -0.5 V, IC = 0,
f = 1.0 MHz
105
pF
NF
Noise Figure
IC = -0.2 mA, VCE = -5.0 V,
RS = 1.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
10
dB
fT
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
100
MHz
www.fairchildsemi.com
2
BCW68G — PNP General-Purpose Amplifier
Thermal Characteristics(3)
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
500
0.5
VCE = 5V
400
300
200
100
0
0.1
0.3
25 °C
0.1
- 40 °C
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
- 40 °C
- 40 °C
0
1
25 °C
0.6
10
100
I C - COLLECTOR CURRE NT (mA)
- 40 °C
0.6
125 °C
25 °C
0.4
β = 10
125 °C
VCE = 5V
0.2
0.2
1
10
100
I C - COLLECTOR CURRENT (mA)
500
0
0.1
25
20
100
CAPACITANCE (pF)
V CB = 35V
10
1
0.1
50
75
100
T A - AMBIE NT TEMP ERATURE (° C)
16
12
C ib
8
4
0
0.1
125
C ob
1
10
REVERSE BIAS VOLTAGE (V)
50
Figure 6. Input and Output Capacitance vs.
Reverse Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
1
10
I C - COLLECTOR CURRE NT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
0.01
25
500
1
0.8
0.8
I CBO - COLLE CTOR CURRENT (nA)
125 °C
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1
0
25 °C
0.2
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
0.4
β = 10
0.4
125 °C
www.fairchildsemi.com
3
BCW68G — PNP General-Purpose Amplifier
Typical Performance Characteristics
250
I B1 = I B2 =
200
500
Ic
I B1 = I B2 =
10
400
V cc = 15 V
ts
150
TIME (nS)
TIME (nS)
V cc = 15 V
100
tr
300
200
tf
t off
100
50
t on
td
0
10
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
1000
Figure 8. Turn-On and Turn-Off Times vs.
Collector Current
Figure 7. Switching Times vs. Collector Current
50
350
P D - POWER DISSIPATION (mW)
I B1 - TURN 0N BASE CURRENT (mA)
Ic
10
300
20
250
10
t r = 15 V
SOT-23
200
150
5
30 ns
100
2
60 ns
1
10
100
I C - COLLECTOR CURRENT (mA)
0
500
0
25
50
75
100
TEMPERATURE ( o C)
125
150
Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 9. Rise Time vs. Turn-On Base Current
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
50
www.fairchildsemi.com
4
BCW68G — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued)
CHAR. RELATIVE TO VALUES AT VCE = -10V
CHAR. RELATIVE TO VALUES AT I C= -10mA
5
h oe
h re
2
h fe
1
h ie
0.5
VCE = -10 V
T A = 25 oC
0.2
0.1_
_
1
_
_
_
2
5
10
20
I C - COLLECTOR CURRENT (mA)
_
50
1.2
h re and hoe
h re
h ie
h fe
hoe
1.1
1
h ie
0.9
h fe
0.8
-4
I C = -10mA
T A = 25oC
-8
-12
-16
V CE - COLLECTOR VOLTAGE (V)
-20
Figure 12. Common Emitter Characteristics
Figure 11. Common Emitter Characteristics
CHAR. RELATIVE TO VALUES AT TA = 25oC
1.3
1.5
I C = -10mA
1.4 V = -10 V
CE
1.3
1.2
h fe
h ie
h re
hoe
1.1 hoe
1
0.9
0.8
0.7
h re
h ie
0.6
0.5
-40
h fe
-20
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
100
Figure 13. Common Emitter Characteristics
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
www.fairchildsemi.com
5
BCW68G — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued, f = 1.0 kHz)
BCW68G — PNP General-Purpose Amplifier
Physical Dimensions
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 14. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
www.fairchildsemi.com
6
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Rev. I68
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