BCW68GLT1, BCW68GLT3G
General Purpose Transistor
PNP Silicon
Features
• Pb−Free Package is Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−45
Vdc
Collector−Base Voltage
VCBO
−60
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
IC
−800
mAdc
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
1
BASE
2
EMITTER
3
SOT−23
CASE 318
STYLE 6
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
MARKING DIAGRAM
DG MG
G
DG
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
SOT−23
3000 / Tape & Reel
BCW68GLT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BCW68GLT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
Device
BCW68GLT1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 4
1
Publication Order Number:
BCW68GLT1/D
BCW68GLT1, BCW68GLT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)
V(BR)CEO
−45
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −10 mAdc, VEB = 0)
V(BR)CES
−60
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
−
−
Vdc
−
−
−
−
−20
−10
nAdc
mAdc
−
−
−20
nAdc
120
160
60
−
−
−
400
−
−
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
ICES
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)
IEBO
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (IC = −300 mAdc, IB = −30 mAdc)
VCE(sat)
−
−
−1.5
Vdc
Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
−
−2.0
Vdc
fT
100
−
−
MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
−
18
pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
−
105
pF
Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
http://onsemi.com
2
BCW68GLT1, BCW68GLT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
b
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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3
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BCW68GLT1/D
