BCX19LT1G

BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors Voltage and Current are Negative for PNP Transistors PNP http://onsemi.com NPN COLLECTOR 3 1 BASE 2 EMITTER 2 EMITTER Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage BCX19LT1 BCX18LT1 Collector − Base Voltage BCX19LT1 BCX18LT1 Emitter − Base Voltage Collector Current − Continuous Symbol VCEO Value 45 25 Vdc 50 30 5.0 500 Vdc mAdc Unit Vdc 3 1 2 SOT−23 CASE 318 STYLE 6 VCBO VEBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MARKING DIAGRAM xx M G G 1 xx = T2 or U1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 0 1 Publication Order Number: BCX18LT1/D BCX18LT1G, PNP BCX19LT1G, NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE − 100 70 40 − − − − − − − 600 − − 0.62 1.2 Vdc Vdc BCX19 BCX18 BCX19 BCX18 V(BR)CEO Vdc 45 25 50 30 − − − − − − − − − − − − Vdc − − 100 5.0 10 nAdc mAdc mAdc Symbol Min Typ Max Unit V(BR)CES ICBO IEBO VCE(sat) VBE(on) ORDERING INFORMATION Device BCX18LT1G BCX19LT1G Specific Marking T2 U1 Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BCX18LT1G, PNP BCX19LT1G, NPN 1000 VCE = 1 V TJ = 25°C hFE, DC CURRENT GAIN 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 1.0 TA = 25°C 0.8 VBE(on) @ VCE = 1 V 0.6 VBE(sat) @ IC/IB = 10 0.6 IC = 10 mA 100 mA 300 mA 500 mA 0.4 0.4 0.2 0 0.01 0.2 VCE(sat) @ IC/IB = 10 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 2. Saturation Region Figure 3. “On” Voltages θV, TEMPERATURE COEFFICIENTS (mV/ °C) +1 qVC for VCE(sat) C, CAPACITANCE (pF) 0 100 Cib 10 -1 -2 qVB for VBE Cob 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 1 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 4. Temperature Coefficients Figure 5. Capacitances http://onsemi.com 3 BCX18LT1G, PNP BCX19LT1G, NPN PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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