BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors
Voltage and Current are Negative for PNP Transistors
PNP
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NPN COLLECTOR 3 1 BASE 2 EMITTER 2 EMITTER
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector − Emitter Voltage BCX19LT1 BCX18LT1 Collector − Base Voltage BCX19LT1 BCX18LT1 Emitter − Base Voltage Collector Current − Continuous Symbol VCEO Value 45 25 Vdc 50 30 5.0 500 Vdc mAdc Unit Vdc
3 1 2 SOT−23 CASE 318 STYLE 6
VCBO
VEBO IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
MARKING DIAGRAM
xx M G G 1 xx = T2 or U1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
RqJA TJ, Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 0
1
Publication Order Number: BCX18LT1/D
BCX18LT1G, PNP BCX19LT1G, NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE − 100 70 40 − − − − − − − 600 − − 0.62 1.2 Vdc Vdc BCX19 BCX18 BCX19 BCX18 V(BR)CEO Vdc 45 25 50 30 − − − − − − − − − − − − Vdc − − 100 5.0 10 nAdc mAdc mAdc Symbol Min Typ Max Unit
V(BR)CES
ICBO
IEBO
VCE(sat) VBE(on)
ORDERING INFORMATION
Device BCX18LT1G BCX19LT1G Specific Marking T2 U1 Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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BCX18LT1G, PNP BCX19LT1G, NPN
1000 VCE = 1 V TJ = 25°C
hFE, DC CURRENT GAIN
100
10 0.1
1.0 10 100 IC, COLLECTOR CURRENT (mA)
1000
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS)
1.0 TA = 25°C 0.8 VBE(on) @ VCE = 1 V 0.6 VBE(sat) @ IC/IB = 10
0.6 IC = 10 mA 100 mA 300 mA 500 mA
0.4
0.4
0.2 0 0.01
0.2 VCE(sat) @ IC/IB = 10 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
Figure 2. Saturation Region
Figure 3. “On” Voltages
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
+1 qVC for VCE(sat) C, CAPACITANCE (pF) 0
100
Cib 10
-1
-2
qVB for VBE
Cob
1
10 100 IC, COLLECTOR CURRENT (mA)
1000
1 0.1
1 10 VR, REVERSE VOLTAGE (VOLTS)
100
Figure 4. Temperature Coefficients
Figure 5. Capacitances
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BCX18LT1G, PNP BCX19LT1G, NPN
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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BCX18LT1/D
