BCX71JLT1

BCX71J General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 Vdc Collector − Base Voltage VCBO −45 Vdc Emitter − Base Voltage VEBO −5.0 Vdc IC −100 mAdc Collector Current − Continuous 2 EMITTER 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C 2 Symbol Max Unit PD 350 mW 2.8 mW/°C Storage Temperature Tstg 150 °C Thermal Resistance, Junction-to-Ambient (Note 1) RJA 357 °C/W SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm. BJ M G G BJ = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † BCX71JLT1 SOT−23 3000/Tape & Reel BCX71JLT1G SOT−23 (Pb−free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 2 1 Publication Order Number: BCX71J/D BCX71J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −45 − −5.0 − − − −20 −20 40 250 100 250 − 460 − 500 − − −0.25 −0.55 −0.6 −0.68 −0.85 −1.05 −0.6 −0.75 − 6.0 − 6.0 − 150 − 800 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IE = 1.0 Adc, IE = 0) V(BR)EBO Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Vdc Vdc ICES nAdc Adc ON CHARACTERISTICS DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hFE − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.25 mAdc) (IC = 50 mAdc, IB = 1.25 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(sat) Base− Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Vdc Vdc Vdc Cobo Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) pF NF dB SWITCHING CHARACTERISTICS Turn−On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) ton Turn−Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) toff ns ns TYPICAL NOISE CHARACTERISTICS (VCE = − 5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 A 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 A 3.0 2.0 100 A 1.0 mA 300 A BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 A 1.0 0.7 0.5 100 A 30 A 0.3 0.2 1.0 10 10 A 0.1 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 2 5.0k 10k BCX71J NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 1.0M 500k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = − 5.0 Vdc, TA = 25°C) 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF + 20 log10 20k 10k 0.5 dB 2.0k 1.0k 500 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 2 2 1ń2 S ) In RS ƫ ƪen2 ) 4KTR 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 5.0k 200 100 30 500 700 1.0k IC, COLLECTOR CURRENT (A) Figure 5. Wideband TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN 400 TJ = 125°C 25°C 200 −55 °C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain http://onsemi.com 3 2.0 3.0 5.0 7.0 10 20 30 50 70 100 BCX71J 1.0 100 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS TYPICAL STATIC CHARACTERISTICS 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 s 80 DUTY CYCLE ≤ 2.0% 300 A 200 A 150 A 40 100 A 20 50 A 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Collector Saturation Region V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 − 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 100 300 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 ts VCC = − 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 0.2 − 55°C to 25°C 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 30 tr 20 10 7.0 5.0 1.0 VB for VBE Figure 10. Temperature Coefficients 500 200 25°C to 125°C *VC for VCE(sat) 0 Figure 9. “On” Voltages 300 40 Figure 8. Collector Characteristics 1.4 1.2 250 A 60 0 20 IB = 400 A 350 A 30 td @ VBE(off) = 0.5 V 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 100 70 50 tf 20 50 70 10 −1.0 100 Figure 11. Turn−On Time − 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30 IC, COLLECTOR CURRENT (mA) Figure 12. Turn−Off Time http://onsemi.com 4 − 50 − 70 −100 BCX71J 500 10 TJ = 25°C VCE = 20 V Cib C, CAPACITANCE (pF) 300 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance 20 10 hfe ≈ 200 @ IC = −1.0 mA 7.0 5.0 VCE = −10 Vdc f = 1.0 kHz TA = 25°C 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 200 100 70 50 30 20 10 20 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 0.2 Figure 15. Input Impedance 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance 104 IC, COLLECTOR CURRENT (nA) hie , INPUT IMPEDANCE (k Ω ) TJ = 25°C 7.0 hoe , OUTPUT ADMITTANCE ( mhos) f, T CURRENT−GAIN  BANDWIDTH PRODUCT (MHz TYPICAL DYNAMIC CHARACTERISTICS VCC = 30 V 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10−1 10−2 −4 0 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160 TJ, JUNCTION TEMPERATURE (°C) Figure 17. Typical Collector Leakage Current http://onsemi.com 5 50 100 BCX71J PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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