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BCX71K
PNP General-Purpose Amplifier
Description
C
This device is designed for applications requiring
extremely high-current gain at collector currents to
300 mA. Sourced from process 68.
E
SOT-23
Mark: BK
B
Ordering Information
Part Number
Marking
Package
Packing Method
BCX71K
BK
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
-45
V
VCES
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
IC
TJ , TSTG
Collector Current - Continuous
Junction and Storage Temperature Range
-5
V
-500
mA
-55 to +150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
BCX71K Rev. 1.1.0
www.fairchildsemi.com
1
BCX71K — PNP General-Purpose Amplifier
March 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
350
mW
Derate Above TA = 25°C
2.8
mW/°C
Thermal Resistance, Junction to Ambient
357
°C/W
Note:
3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
V(BR)EBO
Parameter
Conditions
Collector-Emitter Breakdown Voltage IC = -1.0 mA, IB = 0
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
ICES
Collector Cut-Off Current
hFE
DC Current Gain
Min.
Max.
Unit
-45
V
-5.0
V
VCE = -45 V, IE = 0
-20
nA
VCE = -45 V, IE = 0,
TA = 100°C
-20
μA
IC = -10 μA, VCE = -5.0 V
100
IC = -2.0 mA, VCE = -5.0 V
380
IC = -50 mA, VCE = -1.0 V
110
IC = -10 mA, IB = -0.25 mA
-0.06
-0.25
IC = -50 mA, IB = -1.25 mA
-0.12
-0.55
IC = -10 mA, IB = -0.25 mA
-0.60
-0.85
IC = -50 mA, IB = -1.25 mA
-0.68
-1.05
-0.60
-0.75
V
630
V
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
IC = -2.0 mA, VCE = -5.0 V
Cob
Output Capacitance
VCB = -10 V, IE = 0,
f = 1.0 MHz
6.0
pF
NF
Noise Figure
IC = -0.2 mA, VCE = -5.0 V,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
6.0
dB
ton
Turn-On Time
IC = -10 mA, IB1 = -1.0 mA
150
ns
toff
Turn-Off Time
IB2 = -1.0 mA, VBB = -3.6 V,
R1 = R2 = 5.0 kΩ,
RL = 990 Ω,
800
ns
© 1997 Fairchild Semiconductor Corporation
BCX71K Rev. 1.1.0
V
www.fairchildsemi.com
2
BCX71K — PNP General-Purpose Amplifier
Thermal Characteristics(3)
VCESAT - COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
500
V CE = 5V
0.25
125 °C
400
300
- 40 °C
0
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
0
0.1
V BEON - BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
β = 10
125 °C
1
10
100
I C - COLLECTOR CURRE NT (mA)
300
- 40°C
25 °C
125 °C
0.6
25 °C
- 40 °C
1
0.8
- 40 °C
0.6
125 °C
0.4
0.4
0
0.1
V CE = 5V
0.2
0.2
1
10
100
I C - COLLECTOR CURRE NT (mA)
300
0
0.1
1
10
I C - COLLECTOR CURRE NT (mA)
100 200
Figure 4. Base-Emitter On Voltage vs.
Collector Current
BVCER - BREAKDOWN VOLTAGE (V)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
I CBO - COLLE CTOR CURRENT (nA)
25 °C
0.1
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1
0.8
0.2
0.05
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
1.2
β = 10
0.15
25 °C
200
100
0.3
100
95
V CB = 50V
90
10
85
1
80
0.1
0.01
25
75
50
75
100
T A - AMBIE NT TEMP ERATURE ( ° C)
70
0.1
125
10
100
1000
RESISTANCE (kΩ )
Figure 6. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
BCX71K Rev. 1.1.0
1
www.fairchildsemi.com
3
BCX71K — PNP General-Purpose Amplifier
Typical Performance Characteristics
V CE - COLLECTOR-EMITTER VOLTAGE (V)
100
4
f = 1.0 MHz
CAPACITANCE (pF)
Ta = 25°C
3
Ic =
2
100 uA
300 mA
50 mA
10
Cib
Cob
1
0.1
0
100
300
700
I B - BASE CURRENT (μA)
10
100
Figure 8. Input and Output Capacitance vs.
Reverse Voltage
Figure 7. Collector Saturation Region
f T - GAIN BANDWIDTH PRODUCT (MHz)
1
V CE - COLLECTOR VOLTAGE (V)
2000 4000
350
P D - POWER DISSIPATION (mW)
40
Vce = 5V
300
30
250
SOT-23
200
20
150
100
10
50
0
0
1
10
20
50
100 150
I C - COLLECTOR CURRENT (mA)
25
50
75
100
TEMPERATURE ( o C)
125
150
Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 9. Gain Bandwidth Product vs.
Collector Current
© 1997 Fairchild Semiconductor Corporation
BCX71K Rev. 1.1.0
0
www.fairchildsemi.com
4
BCX71K — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued)
BCX71K — PNP General-Purpose Amplifier
Physical Dimensions
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 11. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 1997 Fairchild Semiconductor Corporation
BCX71K Rev. 1.1.0
www.fairchildsemi.com
5
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