BD13516S

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Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 © 2007 Semiconductor Components Industries, LLC. November-2017, Rev. 2 Package Packing Method Bulk Rail TO-126 3L Bulk Rail Bulk Rail Publication Order Number: BD139/D BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC ICP IB Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current PC Device Dissipation TJ Junction Temperature Storage Temperature TSTG Value BD135 BD137 BD139 BD135 BD137 BD139 Units 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 1.25 150 - 55 to +150 TC = 25°C TA = 25°C V V V A A A W W °C °C Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) Parameter Test Condition BD135 BD137 BD139 Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 30 mA, IB = 0 VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 150 mA IC = 500 mA, IB = 50 mA VCE = 2 V, IC = 0.5 A Min. Typ. Max. 45 60 80 25 25 40 V 0.1 10 μA μA 250 0.5 1 V V hFE Classification Classification 6 10 16 hFE3 40 ~ 100 63 ~ 160 100 ~ 250 www.onsemi.com 2 Units BD135 / 137 / 139 — Features Absolute Maximum Ratings BD135 / 137 / 139 — Features Typical Performance Characteristics 100 60 50 40 30 20 10 100 400 IB 350 300 250 200 150 100 50 0 1E-3 0 10 IC = 20 IB 70 450 IC = 10 hFE, DC CURRENT GAIN 80 500 VCE(sat)[mV], SATURATION VOLTAGE V CE = 2V 90 1000 Figure 1. DC current Gain 0.1 10 10 1.0 IC MAX. (Pulsed) ) (on V V BE =5 V CE 0.7 0.6 0.5 0.4 0.1 0.01 0.1 1E-3 0.01 0.1 1 1 10 Figure 3. Base-Emitter Voltage 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 50 75 100 125 100 Figure 4. Safe Operating Area 20.0 25 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT 0 100us BD139 BD137 BD135 0.3 1 DC IC[A], COLLECTOR CURRENT 0.8 10us IC MAX. (Continuous) s 1m t) (sa V BE 0 I B 1 IC = 0.9 0.2 PC[W], POWER DISSIPATION 1 Figure 2. Collector-Emitter Saturation Voltage 1.1 VBE[V], BASE-EMITTER VOLTAGE 0.01 IC[A], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating www.onsemi.com 3 BD135 / 137 / 139 — Features Physical Dimensions TO-126 3L    0$;      '    ;   ;  ƒ 352'8&7,21 7(50,1$/ /(1*7+' &2'( 76678  7678  127(6 121( $7+,63$&.$*('2(6127&203/