PNP Epitaxial Silicon
Transistor
BD136 Series
BD136 / BD138 / BD140
Applications
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• Complement to BD135, BD137 and BD139 Respectively
• These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Symbol
BD136
BD138
BD140
BD136
BD138
BD140
VCBO
VEBO
Collector Current (DC)
Unit
V
−45
−60
−80
VCEO
Emitter−Base Voltage
Max
V
−45
−60
−80
−5
V
IC
−1.5
A
Collector Current (Pulse)
ICP
−3.0
A
Base Current
IB
−0.5
A
TO−126
CASE 340AS
1 2 3
1 Emitter
2 Collector
3 Base
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
BD1XX
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Collector Dissipation
PC
12.5
W
Collector Dissipation (TA = 25°C)
PC
1.25
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
−55~150
°C
Y
WW
BD1XX
XX
ORDERING INFORMATION
Device
1
Shipping
60 Units/ Tube
BD13610S
500 Units/ Bulk Box
BD13616STU
60 Units/ Tube
BD13810STU
November, 2019 − Rev. 1
Package
BD13610STU
BD13616S
© Semiconductor Components Industries, LLC, 2000
= Year
= Work Week
= Specific Device Code
= 36, 38, 40
TO−126
(Pb−Free)
500 Units/ Bulk Box
60 Units/ Tube
BD13816STU
60 Units/ Tube
BD14010STU
60 Units/ Tube
BD14016STU
60 Units/ Tube
BD14016S
500 Units/ Bulk Box
Publication Order Number:
BD136/D
BD136 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
VCEO(sus)
Parameter
Test Condition
Collector−Emitter Sustaining Voltage (Note 1) IC = −30 mA, IB = 0
BD136
BD138
BD140
Min.
Typ.
Max.
Units
V
−45
−60
−80
ICBO
Collector Cut−off Current
VCB = −30 V, IE = 0
−0.1
mA
IEBO
Emitter Cut−off Current
VEB = −5 V, IC = 0
−10
mA
hFE1
DC Current Gain (Note 1)
VCE = −2 V, IC = −5 mA
hFE2
25
VCE = −2 V, IC = −150 mA
BD13610/BD13810/BD14010
BD13616/BD13816/BD14016
hFE3
VCE = −2 V, IC = −500 mA
63
100
160
250
25
VCE(sat)
Collector−Emitter Saturation Voltage
(Note 1)
IC = 500 mA, IB = 50 mA
−0.5
V
VBE(on)
Base−Emitter ON Voltage (Note 1)
VCE = −2 V, IC = −0.5 A
−1
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed
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2
BD136 Series
TYPICAL PERFORMANCE CHARACTERISTICS
VCE = −2 V
hFE, DC CURRENT GAIN
90
80
70
60
50
40
30
20
10
0
−10
−1000
−100
−500
VCE(sat), SATURATION VOLTAGE [mV]
100
−450
−350
−300
−250
−150
−100
−50
−0
−1E−3
−1
−0.1
−10
Figure 2. Collector−Emitter Saturation Volatage
−1.1
−10
−1.0
−0.9
IC, COLLECTOR CURRENT [A]
VBE(sat)
IC = 10 IB
−0.8
VBE(on)
VCE = −5 V
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−1E−3
−0.01
−0.1
−1
20.0
15.0
12.5
10.0
7.5
5.0
2.5
75
100
125
150
−10
−100
Figure 4. Safe Operating Area
17.5
50
DC
VCE, COLLECTOR−EMITTER VOLTAGE [V]
Figure 3. Base−Emitter Voltage
25
1 ms
IC MAX. (Continues)
−0.1
IC, COLLECTOR CURRENT [A]
0
10 ms
100 ms
−0.01
−1
−10
−1
IC MAX. (Pulsed)
BD140
BD138
BD136
VBE, BASE−EMITTER VOLTAGE [V]
−0.01
IC, COLLECTOR CURRENT [A]
Figure 1. DC Current Gain
PC, POWER DISSIPATION [W]
IC = 10 IB
−200
IC[mA], COLLECTOR CURRENT
0.0
IC = 20 IB
−400
175
TC, CASE TEMPERATURE [°C]
Figure 5. Power Derating
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−126−3LD
CASE 340AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13817G
TO−126−3LD
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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