BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor
This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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• Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140
1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W
MAXIMUM RATINGS
Rating Collector−Emitter Voltage BD135 BD137 BD139 BD135 BD137 BD139 Symbol VCEO Value 45 60 80 45 60 100 5.0 1.5 0.5 1.25 10 12.5 100 – 55 to + 150 Unit Vdc 32 1 Vdc
TO−225AA CASE 77 STYLE 1
Collector−Base Voltage
VCBO
MARKING DIAGRAM
Vdc Adc Adc Watts mW/°C Watts mW/°C °C xx Y WW = 35, 37, 39 = Year = Work Week YWW BD1xx
Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
VEBO IC IB PD PD TJ, Tstg
ORDERING INFORMATION
Device BD135 BD135G BD137 Package TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) Shipping† 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol qJC qJA Max 10 100 Unit °C/W °C/W
BD137G BD139 BD139G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
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April, 2005 − Rev. 12
Publication Order Number: BD135/D
BD135, BD137, BD139
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) Symbol BVCEO* BD 135 BD 137 BD 139 ICBO − − IEBO hFE* 25 40 25 VCE(sat)* VBE(on)* − − − 250 − 0.5 1 Vdc Vdc − 0.1 10 10 mAdc − 45 60 80 − − − mAdc Type Min Max UnIt Vdc
Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A VCE = 2 V) Collector−Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) Base−Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) *Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms 0.1 ms 0.5 ms dc
0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 80
Figure 1. Active−Region Safe Operating Area
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BD135, BD137, BD139
PACKAGE DIMENSIONS
TO−225AA CASE 77−09 ISSUE Z
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−−
−B− U Q
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−A−
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
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A
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B
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B
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DIM A B C D F G H J K M Q R S U V
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
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BD135, BD137, BD139
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PUBLICATION ORDERING INFORMATION
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BD135/D
