BD159G

BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features www.onsemi.com • Suitable for Transformerless, Line−Operated Equipment • High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 350 Vdc Collector−Base Voltage VCB 375 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 0.5 Adc ICM 1.0 Adc Base Current IB 0.25 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 W mW/_C –65 to +150 _C Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range TJ, Tstg 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 20 WATTS COLLECTOR 2, 4 3 BASE 1 EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TO−225 CASE 77−09 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 _C/W 1 2 3 MARKING DIAGRAM YWW BD159G Y WW BD159 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device BD159G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 March, 2017 − Rev. 8 1 Package Shipping TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD159/D BD159G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) BVCEO 350 − Vdc Collector Cutoff Current (at rated voltage) ICBO − 100 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 100 mAdc hFE 30 240 − ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1.0 20 V, VOLTAGE (VOLTS) PD, POWER DISSIPATION (WATTS) 25 15 0.8 VBE @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 10 TJ = + 25°C 0.2 IC/IB = 5.0 5.0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 0 160 10 20 IC, COLLECTOR CURRENT (AMPS) Figure 1. Power−Temperature Derating Curve 1.0 0.7 0.5 500 ms 0.3 The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below, the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. 10 ms dc 0.2 0.1 0.07 0.05 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.03 0.02 0.01 500 Figure 2. “On” Voltages 1.0 ms TJ = 150°C 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 10 200 20 30 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 3. DC Safe Operating Area 300 VCE = 10 V VCE = 2.0 V hFE, DC CURRENT GAIN 200 TJ = 150°C 100 + 100°C 70 50 + 25°C 30 - 55°C 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 4. Current Gain www.onsemi.com 2 70 100 200 300 500 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD 4 DATE 25 MAR 2015 3 2 1 1 2 3 FRONT VIEW BACK VIEW SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 GENERIC MARKING DIAGRAM* L YWW XX XXXXXG 2X b2 2X e b FRONT VIEW Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package c SIDE VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE STYLE 2: PIN 1. CATHODE 2., 4. ANODE 3. GATE STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER STYLE 4: PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE STYLE 5: PIN 1. MT 1 2., 4. MT 2 3. GATE STYLE 6: PIN 1. CATHODE 2., 4. GATE 3. ANODE STYLE 7: PIN 1. MT 1 2., 4. GATE 3. MT 2 STYLE 8: PIN 1. SOURCE 2., 4. GATE 3. DRAIN STYLE 9: PIN 1. GATE 2., 4. DRAIN 3. SOURCE STYLE 10: PIN 1. SOURCE 2., 4. DRAIN 3. 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