BD237

BD237 (NPN), BD234 (PNP), BD238 (PNP) Preferred Devices Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com • DC Current Gain − • • • hFE = 40 (Min) @ IC = 0.15 Adc Epoxy Meets UL 94 V0 @ 0.125 in ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V Pb−Free Packages are Available* 2.0 AMPERES POWER TRANSISTORS 25 WATTS TO−225 CASE 77 STYLE 1 32 1 ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCBO VEBO IC IB BD234 45 60 BD237 BD238 80 Unit Vdc Vdc Vdc Adc Adc W Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current 100 5.0 2.0 1.0 25 Total Device Dissipation @ TC = 25_C PD Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 _C MARKING DIAGRAM YWW BD23xG BD23x x Y WW G = Device Code = 4, 7 or 8 = Year = Work Week = Pb−Free Package THERMAL CHARACTERISTICS Characteristic ORDERING INFORMATION Device BD234 BD234G BD237 BD237G BD238 BD238G Package TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) Shipping 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box Symbol RqJC Max 5.0 Unit Thermal Resistance, Junction−to−Case _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 14 Publication Order Number: BD237/D BD237 (NPN), BD234 (PNP), BD238 (PNP) IC, COLLECTOR CURRENT (AMP) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) ÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Symbol Type Min 80 45 − − − Max − − Unit Vdc V(BR)CEO ICBO BD237, BD238 BD234 BD237, BD238 BD234 − mAdc 0.1 0.1 1.0 IEBO mAdc − DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE1 hFE2 − − − − − 40 25 − − − − Collector−Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) Base−Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VCE(sat) VBE(on) fT 0.6 1.3 − Vdc Vdc Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 MHz 1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%. 10 100 ms 1 ms 5 ms TJ = 150°C dc 3 1 The Safe Operating Area Curves indicate IC−VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. 0.3 BD236 BD237 30 0.1 1 3 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region http://onsemi.com 2 BD237 (NPN), BD234 (PNP), BD238 (PNP) hFE , DC CURRENT GAIN (NORMALIZED) 1000 700 500 300 200 100 70 50 30 20 10 2.0 3.0 5.0 TJ = + 150°C TJ = + 25°C TJ = − 55°C 1.5 VCE = 2.0 V VOLTAGE (VOLTS) 1.2 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) TJ = 25°C 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. “On” Voltages r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.01 SINGLE PULSE qJC(t) = r(t) qJC qJC = 4.16°C/W MAX qJC = 3.5°C/W TYP D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3 BD237 (NPN), BD234 (PNP), BD238 (PNP) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U Q F M C −A− 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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