BD241C

BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features http://onsemi.com • Collector-Emitter Saturation Voltage • Collector-Emitter Sustaining Voltage • • • • • VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Epoxy Meets UL94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80-100 VOLTS 40 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating TO-220AB CASE 221A-09 STYLE 1 1 2 ÎÎ Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol VCEO VCES VEB IC BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current 5.0 3.0 5.0 1.0 40 IB Adc W Total Device Dissipation @ TC = 25°C Derate above 25°C PD 0.32 W/°C °C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 AYWW BD24xxG 3 BD24xx = Device Code xx = 1C, 2B, or 2C A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION Device BD241C BD241CG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail THERMAL CHARACTERISTICS Characteristic Symbol RqJA Max 62.5 Unit Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case °C/W °C/W BD242B BD242BG 50 Units/Rail 50 Units/Rail RqJC 3.125 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BD242C BD242CG 50 Units/Rail 50 Units/Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 1 November, 2007 - Rev. 7 Publication Order Number: BD241C/D PD, POWER DISSIPATION (WATTS) ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BD241C (NPN), BD242B (PNP), BD242C (PNP) Characteristic 10 20 30 40 0 0 20 40 Figure 1. Power Derating http://onsemi.com TC, CASE TEMPERATURE (°C) 60 80 BD242B BD241C, BD242C BD242B BD241C, BD242C BD242B BD241C, BD242C 100 120 140 Symbol VCE(sat) VBE(on) VCEO ICEO IEBO ICES hFE hfe 160 fT Min 80 100 3.0 20 25 10 Max 200 1.8 1.2 1.0 0.3 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc 2 BD241C (NPN), BD242B (PNP), BD242C (PNP) 2.0 TURN‐ON PULSE APPROX + 11 V Vin 0 VEB(off) APPROX + 11 V Vin t2 TURN‐OFF PULSE DUTY CYCLE [ 2.0% APPROX - 9.0 V t1 t3 VCC Vin RL RK SCOPE t, TIME ( μs) 1.0 0.7 0.5 0.3 tr @ VCC = 30 V IC/IB = 10 TJ = 25°C Cjd % Ceb - 4.0 V t1 v 7.0 ns 100 t t2 t 500 ms t3 t 15 ns tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 td @ VBE(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 Figure 2. Switching Time Equivalent Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.02 0.01 0.02 Figure 3. Turn-On Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 P(pk) ZqJC (t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 5.0 ms 1.0 ms 100 ms 2.0 SECOND BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO BD241C, BD242C 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 1.0 0.5 0.2 0.1 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area http://onsemi.com 3 BD241C (NPN), BD242B (PNP), BD242C (PNP) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C CAPACITANCE (pF) 300 TJ = + 25°C 200 ts′ tf @ VCC = 30 V t, TIME ( μs) 100 Ceb 70 50 Ccb tf @ VCC = 10 V 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 6. Turn-Off Time 500 300 hFE, DC CURRENT GAIN TJ = 150°C 25°C - 55°C VCE = 2.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 Figure 7. Capacitance TJ = 25°C 1.6 100 70 50 30 1.2 IC = 0.3 A 1.0 A 3.0 A 0.8 10 7.0 5.0 0.03 0.4 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 0 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/ °C) 1.4 + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 qVB FOR VBE *qVC FOR VCE(sat) *APPLIES FOR IC/IB ≤ 5.0 TJ = - 65°C TO + 150°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0 0.003 0.005 0.01 0.020.03 0.05 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 BD241C (NPN), BD242B (PNP), BD242C (PNP) 103 IC, COLLECTOR CURRENT ( μA) 102 101 100 10-1 REVERSE 10- 2 25°C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 FORWARD VCE = 30 V TJ = 150°C 100°C RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM 107 IC = 10 x ICES 106 105 104 103 102 VCE = 30 V IC ≈ ICES IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 10- 3 - 0.4 - 0.3 - 0.2 - 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 5 BD241C (NPN), BD242B (PNP), BD242C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -TB 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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