BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
Features
•
•
•
•
High Current Gain − Bandwidth Product
Compact TO−220 AB Package
Epoxy Meets UL94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
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MAXIMUM RATINGS
Symbol
BD242B
BD241C
BD242C
Collector−Emitter Voltage
VCEO
80
100
Vdc
Collector−Emitter Voltage
VCES
90
115
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
3.0
Adc
ICM
5.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
TJ, Tstg
– 65 to + 150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Rating
Collector Current −Continuous
Collector Current − Peak
Operating and Storage
Junction Temperature Range
Unit
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
COMPLEMENTARY
COLLECTOR 2,4
1
BASE
1
BASE
EMITTER 3
Characteristic
Symbol
Max
Unit
RqJA
62.5
°C/W
Thermal Resistance, Junction−to−Case
RqJC
3.125
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
EMITTER 3
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 1
1
2
AYWW
BD24xxG
3
BD24xx = Device Code
xx = 1C, 2B, or 2C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
COLLECTOR 2,4
ORDERING INFORMATION
Device
Package
Shipping†
BD241CG
TO−220
(Pb−Free)
50 Units/Rail
BD242BG
TO−220
(Pb−Free)
50 Units/Rail
BD242CG
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BD241C/D
BD241C (NPN), BD242B (PNP), BD242C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
VCEO
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD242B
BD241C, BD242C
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
BD242B
BD241C, BD242C
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
BD242B
BD241C, BD242C
Vdc
80
100
ICEO
mAdc
0.3
mAdc
ICES
200
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
1.0
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.6 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
Vdc
1.2
Vdc
1.8
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
3.0
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = |hfe| • ftest.
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
BD241C (NPN), BD242B (PNP), BD242C (PNP)
2.0
VCC
TURN‐ON PULSE
APPROX
+ 11 V
Vin
RL
0.7
0.5
SCOPE
RK
t1
t3
APPROX
+ 11 V
t, TIME (s)
μ
Cjd%Ceb
Vin 0
VEB(off)
- 4.0 V
t1 v 7.0 ns
100 t t2 t 500 ms
t3 t 15 ns
tr @ VCC = 30 V
0.3
tr @ VCC = 10 V
0.1
td @ VBE(off) = 2.0 V
0.07
0.05
Vin
t2
TURN‐OFF PULSE
IC/IB = 10
TJ = 25°C
1.0
0.03
0.02
0.03
DUTY CYCLE [ 2.0%
APPROX - 9.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Time Equivalent Circuit
1.0
0.7
0.5
3.0
Figure 3. Turn−On Time
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZqJC (t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150°C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
5.0
1.0 ms
5.0 ms
100 ms
2.0
1.0
0.5
0.2
0.1
5.0
SECOND BREAKDOWN
LIMITED @ TJ v 150°C
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED VCEO
BD241C, BD242C
10
20
50
IC, COLLECTOR CURRENT (AMP)
100
Figure 5. Active Region Safe Operating Area
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3
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3.0
2.0
0.3
0.2
ts′
tf @ VCC = 30 V
TJ = + 25°C
200
CAPACITANCE (pF)
t, TIME (s)
μ
1.0
0.7
0.5
300
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
tf @ VCC = 10 V
0.1
100
Ceb
70
50
0.07
0.05
0.03
0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
30
0.1
2.0 3.0
Ccb
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Capacitance
500
hFE, DC CURRENT GAIN
300
100
70
VCE = 2.0 V
TJ = 150°C
25°C
-55°C
50
30
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 25°C
1.6
1.2
IC = 0.3 A
θV, TEMPERATURE COEFFICIENTS (mV/°C)
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.020.03 0.05
0.1
0.2 0.3 0.5
3.0 A
0.4
0
1.0
2.0
5.0
10
20
50
100 200
IB, BASE CURRENT (mA)
500 1000
Figure 9. Collector Saturation Region
1.4
0.2
1.0 A
0.8
Figure 8. DC Current Gain
1.2
20 30 40
1.0
2.0 3.0
+2.5
+2.0
+1.5
*APPLIES FOR IC/IB ≤ 5.0
TJ = - 65°C TO + 150°C
+1.0
+0.5
*qVC FOR VCE(sat)
0
-0.5
-1.0
-1.5
qVB FOR VBE
-2.0
-2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3
0.5
1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
BD241C (NPN), BD242B (PNP), BD242C (PNP)
IC, COLLECTOR CURRENT (A)
μ
103
102
VCE = 30 V
101
TJ = 150°C
100
100°C
10-1
REVERSE
10-2
FORWARD
25°C
10-3
-0.4 -0.3 -0.2 -0.1
ICES
0
+0.1 +0.2 +0.3
+0.4 +0.5
+0.6
107
VCE = 30 V
IC = 10 x ICES
106
105
IC ≈ ICES
IC = 2 x ICES
104
103
102
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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