BD243BTU

BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 2 A 65 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. Typ. Max. 45 60 80 100 Units V V V V VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.7 0.7 mA mA VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 0.4 0.4 0.4 0.4 mA mA mA mA 1 mA 1.5 V 2 V IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE *DC Current Gain VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A VCE(sat) *Collector-Emitter Saturation Voltage IC = 6A, IB = 1A VBE(on) *Base-Emitter ON Voltage VCE = 4V, IC = 6A 30 15 * Pulse Test :PW=300µs, duty Cycle