BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
•
•
•
•
•
High DC Current Gain
Monolithic Construction
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
These Devices are Pb−Free and are RoHS Compliant*
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4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
VCEO
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
VCBO
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
– 55 to + 150
°C
Operating and Storage Junction
Temperature Range
EMITTER 1
Vdc
45
60
80
100
TJ, Tstg
TO−225
CASE 77−09
STYLE 1
Vdc
45
60
80
100
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.13
°C/W
1 2
3
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
Publication Order Number:
BD675/D
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
BVCEO
Collector−Emitter Breakdown Voltage, (Note 1)
(IC = 50 mAdc, IB = 0)
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Collector Cutoff Current
(VCE = Half Rated VCEO, IB = 0)
ICEO
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100’C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
45
60
80
100
−
−
−
−
−
500
−
−
0.2
2.0
−
2.0
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Currert Gain, (Note 1)
(IC = 1.5 Adc,VCE = 3.0 Vdc)
BD675G, BD677G, BD679G, BD681G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD675AG, BD677AG, BD679AG
hFE
Collector−Emitter Saturation Voltage, (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD677G, BD679G, BD681G
(IC = 2.0 Adc, IB = 40 mAdc)
BD675AG, BD677AG, BD679AG
−
750
−
750
−
−
2.5
−
2.8
VCE(sat)
Base−Emitter On Voltage, (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD677G, BD679G, BD681G
(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD675AG, BD677AG, BD679AG
Vdc
VBE(on)
Vdc
−
2.5
−
2.5
1.0
−
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
5.0
IC, COLLECTOR CURRENT (AMP)
PD, POWER DISSIPATION (WATTS)
45
40
35
30
25
20
15
10
5.0
0
15
30
45
60
75
90
105
120
135
150
2.0
1.0
0.5
0.2
0.1
0.05
1.0
165
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
20
2.0
5.0
10
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
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2
100
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
COLLECTOR
NPN
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
BASE
[ 8.0 k
[ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
BD675G
TO−225
(Pb−Free)
500 Units / Box
BD675AG
TO−225
(Pb−Free)
500 Units / Box
BD677G
TO−225
(Pb−Free)
500 Units / Box
BD677AG
TO−225
(Pb−Free)
500 Units / Box
BD679G
TO−225
(Pb−Free)
500 Units / Box
BD679AG
TO−225
(Pb−Free)
500 Units / Box
BD681G
TO−225
(Pb−Free)
500 Units / Box
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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