ON Semiconductort
JFET VHF/UHF Amplifiers
N–Channel — Depletion
BF245A BF245B
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range 3 DRAIN Symbol VDS VDG VGS ID IG(f) PD Tstg Value ±30 30 30 100 10 350 2.8 –65 to +150 3 DRAIN Unit Vdc Vdc Vdc mAdc mAdc mW mW/°C °C
1 2 3
BF244A, BF244B CASE 29–11, STYLE 22 TO–92 (TO–226AA)
1 2 3
2 GATE STYLE 22
1 GATE STYLE 23
BF245, BF245A, BF245B, BF245C CASE 29–11, STYLE 23 TO–92 (TO–226AA) 2 SOURCE
1 SOURCE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate–Source (VDS = 15 Vdc, ID = 200 µAdc) BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C V(BR)GSS VGS 0.4 0.4 1.6 3.2 VGS(off) IGSS –0.5 — — — — — — — 7.5 2.2 3.8 7.5 –8.0 5.0 Vdc nAdc 30 — — Vdc Vdc
Gate–Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Reverse Current (VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C IDSS 2.0 2.0 6.0 12 — — — — 25 6.5 15 25 mAdc
1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped.
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 – Rev. 0
Publication Order Number: BF245A/D
BF245A BF245B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance Output Admittance Forward Transfer Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Cut–off Frequency(3) 3. The frequency at which gfs is 0.7 of its value at 1 kHz. (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 200 MHz) (VDS = 15 Vdc, VGS = 0, f = 200 MHz) (VDS = 20 Vdc, –VGS = 1.0 Vdc) (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) (VDS = 15 Vdc, VGS = 0) Yfs Yos Yfs Yrs Ciss Crss Coss F(Yfs) 3.0 — — — — — — — — 40 5.6 1.0 3.0 0.7 0.9 700 6.5 — — — — — — — mmhos mmhos mmhos mmhos pF pF pF MHz
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 brs @ IDSS 0.25 IDSS
gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos)
gis @ IDSS gis @ 0.25 IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz)
500 700 1000
0.1 0.07 0.05
Figure 1. Input Admittance (yis)
Figure 2. Reverse Transfer Admittance (yrs)
gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos)
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 gos @ IDSS bos @ IDSS and 0.25 IDSS
gfs @ IDSS gfs @ 0.25 IDSS
0.05 0.02 0.01 10 20 30 gos @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 7001000
500 700 1000
Figure 3. Forward Transadmittance (yfs)
Figure 4. Output Admittance (yos)
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BF245A BF245B
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 40° 20° 10° 0° 1.0 350° 100 100 50° 0.9 200 300 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 400 500 600 0.6 900 800 700 900 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 32 ID = 0.25 IDSS 200 300 400 500 300° 60° 310° 50° ID = IDSS, 0.25 IDSS 800 600 400 300 200 100 0.0 700 500 0.1 900 0.2 30 29 28 27 26 25 24 0.3
31
0.7
130°
230°
130°
23
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
22
Figure 5. S11s
30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20°
Figure 6. S12s
10° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 32
50°
0.6
310°
50°
31
60° 70° 80° 90° 100° 110° 120° 130° 900 800 700 600 500 400 300 ID = IDSS 200 100 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 900
0.5
300° 290° 280° 270°
60° 70° 80° 90° 100° 110° 120° 130°
30 29 28 27 26 25 24
0.4
0.7
0.3
0.6
0.3
260° 250° 240° 230°
0.4
0.5
23
0.6 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210°
22
Figure 7. S21s http://onsemi.com
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Figure 8. S22s
BF245A BF245B
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 20 30 gig @ IDSS, 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
gig @ IDSS grg @ 0.25 IDSS
big @ IDSS
big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz)
500 700 1000
0.007 0.005
Figure 9. Input Admittance (yig)
Figure 10. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos)
3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
gfg @ 0.25 IDSS
gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos)
10 7.0 5.0
gfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10
bog @ IDSS, 0.25 IDSS
gog @ IDSS
brg @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz)
gog @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
500 700 1000
Figure 11. Forward Transfer Admittance (yfg)
Figure 12. Output Admittance (yog)
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BF245A BF245B
COMMON GATE CHARACTERISTICS
S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 200 200 300 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 32
ID = 0.25 IDSS 400 500 600 400 500 600 700 700 800 900
310°
50°
0.03 31 0.02
300
60° 70° 80° 90° 100° 110° 120°
300° 290° 280° 270° 260° 250° 240°
60° 70° 80° 90° 100° 110° 120° 600 ID = IDSS 700 800 900 100 500 600 700 800
30 29 28 27
0.4
ID = IDSS
0.01
0.3
800 900
0.0
ID = 0.25 IDSS 0.01
26 25 24
0.02
130°
230°
130°
900
23 0.03 22 190° 200° 210°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170°
0.04 180°
Figure 13. S11g
30° 40° 20° 10° 0° 0.5 100 100 0.3 ID = IDSS 310° 50° 350° 340° 330° 320° 40° 30° 20°
Figure 14. S12g
10° 0° 1.5 1.0 100 0.9 350° 300 200 400 340° 500 600 700 800 900 31 330° 32
0.4 50°
ID = IDSS, 0.25 IDSS 0.8
60° 70° 80° 90° 100° 110° 120°
300° ID = 0.25 IDSS 290° 280° 900 900 270° 260° 250° 240°
60° 70° 80° 90° 100° 110° 120°
30 29 28 27 26 25 24
0.2
0.7
0.1
0.6
130°
230°
130°
23
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
22
Figure 15. S21g http://onsemi.com
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Figure 16. S22g
BF245A BF245B
PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
B
K
XX G H V
1
D J C SECTION X–X N N
STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN
DIM A B C D G H J K L N P R V
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BF245A BF245B
Notes
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BF245A BF245B
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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BF245A/D