BF256A

BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Transfer Capacitance – Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD 360 2.88 Tchannel, Tstg –65 to +150 mW mW/°C °C BF 256A YWW Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 1 2 3 TO–92 CASE 29 STYLE 5 2 SOURCE MARKING DIAGRAMS 500 PD, MAXIMUM CONTINUOUS POWER DISSIPATION (mW) Y WW = Year = Work Week 400 ORDERING INFORMATION 300 Device BF256A 200 Preferred devices are recommended choices for future use and best overall value. Package TO–92 Shipping 5000 Units/Box 100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (°C) Figure 1. Power Derating Curve © Semiconductor Components Industries, LLC, 2001 1 September, 2001 – Rev. 3 Publication Order Number: BF256A/D BF256A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage Gate–Source Voltage Gate Reverse Current (–IG = –1.0 µAdc, VDS = 0) (VDS = 15 Vdc, ID = 200 µA) (–VGS = 20 Vdc, VDS = 0) (VDS = 15 Vdc, VGS = 0) –V(BR)GSS –VGS –IGSS IDSS |Yfs| Crss Coss fgfs 30 0.5 — – — — — 7.5 5.0 Vdc Vdc nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (Note 1.) 3.0 – 7.0 mAdc SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance Reverse Transfer Capacitance Output Capacitance Cut–Off Frequency (Note 2.) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) (VDS = 20 Vdc, –VGS = 1 Vdc, f = 1 MHz) (VDS = 20 Vdc, VGS = 0, f = 1 MHz) (VDS = 15 Vdc, VGS = 0) 4.5 – – – 5.0 0.7 1.0 1000 – – – – mmhos pF pF MHz 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 2. The frequency at which gfs is 0.7 of its value at 1 KHz. 10 GATE–SOURCE CUTOFF VOLTAGE (–VGS(off) @ ID = 10 nA) 9 ID, DRAIN CURRENT (mA) 8 7 6 5 4 3 2 1 0 0 BF256A 5 10 15 20 25 VDS = 15 Vdc 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 18 20 IDSS, DRAIN CURRENT (mA) @ VGS = 0 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.4 V 0.6 V 0.8 V 0.2 V –VGS = 0 V Figure 2. Correlation Between –VGS(off) and IDSS Figure 3. Drain Current versus Drain–to–Source Voltage http://onsemi.com 2 BF256A gfs, FORWARD TRANSCONDUCTANCE (mmhos) –bfs, FORWARD SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) 10 VDS = 15 Vdc VGS = 0 Yis = gis + jbis 1 100 100 VDS = 15 Vdc VGS = 0 Yfs = gfs – jbfs 10 gfs –bfs 1 100 bis, INPUT SUSCEPTANCE (mmhos) bis 10 10 0.1 –gis 1 1 0.01 10 100 f, FREQUENCY (MHz) 0.1 1000 0.1 10 100 f, FREQUENCY (MHz) 0.1 1000 Figure 4. Input Admittance versus Frequency –grs, REVERSE TRANSCONDUCTANCE (mmhos) –brs, REVERSE SUSCEPTANCE (mmhos) Figure 5. Forward Transfer Admittance versus Frequency gos, OUTPUT CONDUCTANCE (mmhos) bos, OUTPUT SUSCEPTANCE (mmhos) 1 VDS = 15 Vdc VGS = 0 Yos = gos + jbos 0.1 1 VDS = 15 Vdc VGS = 0 Yrs = –grs – jbrs 0.1 –brs 0.01 –grs 10 10 gos 1 1 bos 0.1 0.01 0.1 0.001 10 100 f, FREQUENCY (MHz) 1000 0.01 0.001 10 100 f, FREQUENCY (MHz) 0.01 1000 Figure 6. Reverse Transfer Admittance versus Frequency Figure 7. Output Admittance versus Frequency 5 Ciss, INPUT CAPACITANCE (pF) VDS = 20 Vdc f = 1 MHz Crss, REVERSE TRANSFER CAPACITANCE (pF) 1.0 4 3 0.5 VDS = 20 Vdc f = 1 MHz 2 1 0 0 1 2 3 4 5 6 7 8 9 10 –VGS, GATE–SOURCE VOLTAGE (VOLTS) 0 0 2 4 6 8 10 –VGS, GATE–SOURCE VOLTAGE (VOLTS) Figure 8. Input Capacitance versus Gate–Source Voltage Figure 9. Reverse Transfer Capacitance versus Gate–Source Voltage http://onsemi.com 3 BF256A PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X–X N N DIM A B C D G H J K L N P R V ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 BF256A/D