BF720T1G

BF720T1G, BF720T3G NPN Silicon Transistor Features  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Collector -- Emitter Voltage Collector -- Base Voltage Collector -- Emitter Voltage Emitter -- Base Voltage Collector Current Total Power Dissipation up to TA = 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 --65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc W C C BASE 1 EMITTER 3 COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction--to--Ambient (Note 1) Symbol RθJA Max 83.3 Unit C/W 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. SOT-223 (TO-261) CASE 318E STYLE 1 AYW DC G G 1 A = Assembly Location Y = Year W = Work Week DC = Device Code G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BF720T1G BF720T3G Package SOT--223 (Pb--Free) SOT--223 (Pb--Free) Shipping† 1000 / Tape & Reel 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 September, 2010 - Rev. 7 - 1 Publication Order Number: BF720T1/D BF720T1G, BF720T3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, RBE = 2.7 kΩ) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Collector--Emitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 kΩ) (VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150C) ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) DYNAMIC CHARACTERISTICS Current--Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 --1.6 MHz pF hFE VCE(sat) 50 --0.6 -Vdc V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER 300 300 300 5.0 -----10 Vdc Vdc Vdc Vdc nAdc Symbol Min Max Unit --- 50 10 nAdc mAdc http://onsemi.com 2 BF720T1G, BF720T3G 120 100 hFE , DC CURRENT GAIN 80 60 40 20 0 25C TJ = +125C VCE = 10 Vdc --55C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain 100 Ceb @ 1MHz C, CAPACITANCE (pF) 10 f T, CURRENT--GAIN — BANDWIDTH (MHz) 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25C VCE = 20 V f = 20 MHz 50 70 100 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Current-Gain - Bandwidth - VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ --55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ --55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ --55C, VCE = 10 V Figure 4. “ON” Voltages http://onsemi.com 3 BF720T1G, BF720T3G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E--04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 ----------1.75 2.00 7.00 7.30 10 -MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 -----0.069 0.276 -MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 -----0.078 0.287 10 4 HE 1 2 3 E e1 b e A θ L L1 C 0.08 (0003) θ A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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