BF721T1

BF721T1G PNP Silicon Transistor Features  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector -- Emitter Voltage VCEO --300 Vdc Collector -- Base Voltage VCBO --300 Vdc Collector -- Emitter Voltage VCER --300 Vdc Emitter -- Base Voltage VEBO --5.0 Vdc Collector Current IC --50 mAdc Total Power Dissipation up to TA = 25C (Note 1) PD 1.5 W Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 150 C Symbol Max Unit RθJA 83.3 C/W PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction--to--Ambient (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. MARKING DIAGRAM 1 AYW DF G G SOT--223 (TO--261) CASE 318E STYLE 1 1 A = Assembly Location Y = Year W = Work Week DF = Device Code G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BF721T1G Package Shipping† SOT--223 (Pb--Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 September, 2010 -- Rev. 9 1 Publication Order Number: BF721T1/D BF721T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = --1.0 mAdc, IB = 0) V(BR)CEO -- 300 -- Vdc Collector-Base Breakdown Voltage (IC = --100 mAdc, IE = 0) V(BR)CBO --300 -- Vdc Collector-Emitter Breakdown Voltage (IC = --100 mAdc, RBE = 2.7 kΩ) V(BR)CER --300 -- Vdc Emitter-Base Breakdown Voltage (IE = --10 mAdc, IC = 0) V(BR)EBO -- 5.0 -- Vdc Collector-Base Cutoff Current (VCB = -- 200 Vdc, IE = 0) ICBO -- --10 nAdc Collector--Emitter Cutoff Current (VCE = -- 250 Vdc, RBE = 2.7 kΩ) (VCE = -- 200 Vdc, RBE = 2.7 kΩ TJ = 150C) ICER --- --50 --10 nAdc mAdc OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = --25 mAdc, VCE = --20 Vdc) hFE 50 -- -- Collector-Emitter Saturation Voltage (IC = -- 30 mAdc, IB = -- 5.0 mAdc) VCE(sat) -- -- 0.8 Vdc fT 60 -- MHz Cre -- 1.6 pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (VCE = -- 10 Vdc, IC = --10 mAdc, f = 35 MHz) Feedback Capacitance (VCE = -- 30 Vdc, IC = 0, f = 1.0 MHz) http://onsemi.com 2 BF721T1G 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 --55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Cib @ 1MHz f T, CURRENT--GAIN — BANDWIDTH (MHz) C, CAPACITANCE (pF) 100 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current--Gain — Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ --55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ --55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ --55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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