BF959ZL1G

BF959 VHF Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 20 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg 2 EMITTER MARKING DIAGRAM TO−92 CASE 29 STYLE 21 1 2 THERMAL CHARACTERISTICS Characteristic 3 BASE Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 BF959 A Y WW G ORDERING INFORMATION BF959 BF959G BF959RL1 BF959RL1G BF959ZL1 BF959ZL1G © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 3 1 = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BF 959 AYWW G G Package Shipping† TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BF959/D BF959 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 30 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 − − Vdc ICBO − − 100 nAdc 35 40 − − − − OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) − − 1.0 Vdc Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) − − 1.0 Vdc 700 600 − − − − SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre − 0.65 − pF Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 W, f = 200 MHz) Nf − 3.0 − dB http://onsemi.com 2 BF959 500 1000 200 200 100 100 mV hFE , DC CURRENT GAIN 500 50 40 30 50 40 30 20 20 1 2 3 4 5 10 20 30 50 10 100 1.6 1.6 1.4 1.4 1.2 1 0.8 2V 0.6 3 4 5 10 20 10 V 5V 20 30 40 50 50 50 100 1.2 Cib 1 0.8 Cob 0.6 0.2 100 30 Cre 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current−Gain − Bandwidth Product Figure 4. Capacitances 500 200 VCE = 10 V g22e VCE = 10 V Y22e ( μs) 2 b22e 300 g11e 5 4 3 Y11e (ms) 10 0.4 10 b11e 1 0.5 0.4 0.3 100 50 40 30 20 0.2 0.1 4 5 Figure 2. VCE(sat) at IC/IB = 10 1.8 2 3 Figure 1. hFE at 10 V 1.8 1 2 IC, COLLECTOR CURRENT (mA) 2.0 0.4 1 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f, T CURRENT−GAIN  BANDWIDTH PRODUCT (GHz) 10 1 2 3 4 5 10 20 30 50 10 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz http://onsemi.com 3 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM SCALE 1:1 1 12 3 STRAIGHT LEAD BULK PACK DATE 09 MAR 2007 2 3 BENT LEAD TAPE & REEL AMMO PACK A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STRAIGHT LEAD BULK PACK R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X N 1 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K DIM A B C D G J K N P R V D X X J V 1 C N SECTION X−X MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLES ON PAGE 2 DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 3 TO−92 (TO−226) CASE 29−11 ISSUE AM DATE 09 MAR 2007 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 2 OFXXX 3 DOCUMENT NUMBER: 98ASB42022B PAGE 3 OF 3 ISSUE AM REVISION ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. DATE 09 MAR 2007 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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