BFR30LT1G

BFR30LT1, BFR31LT1 JFET Amplifiers N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate −Source Voltage VGS 25 Vdc 1 DRAIN MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C 417 °C/W 3 1 SOT−23 CASE 318 STYLE 10 2 1 PD RJA PD RJA TJ, Tstg x M = 1 or 2 = Date Code ORDERING INFORMATION Device Package Shipping† BFR30LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel BFR30LT1G °C −55 to +150 1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. MxM BFR31LT1 BFR31LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. 4 1 Publication Order Number: BFR30LT1/D BFR30LT1, BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Gate Reverse Current (VGS = 10 Vdc, VDS = 0) IGSS − 0.2 nAdc Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) − − 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS −0.7 − − − −3.0 −1.3 −4.0 −2.0 Vdc BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc 1.0 1.5 0.5 0.75 4.0 4.5 − − 40 20 25 15 OFF CHARACTERISTICS (ID = 50 Adc, VDS = 10 Vdc) ON CHARACTERISTICS Zero −Gate −Voltage Drain Current (VDS = 10 Vdc, VGS = 0) SMALL−SIGNAL CHARACTERISTICS yfs Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30 BFR31 BFR30 BFR31 (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz) mmhos yos Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 Adc, VDS = 10 Vdc) BFR30 BFR31 mhos Input Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Ciss − − 5.0 4.0 pF Reverse Transfer Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Crss − − 1.5 1.5 pF TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 M
4 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 3 2 10 8 6 4 1 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 2. Noise Figure versus Source Resistance http://onsemi.com 2 10 BFR30LT1, BFR31LT1 TYPICAL CHARACTERISTICS 1.2 VGS(OFF)
−1.2 V 1.2 VGS(OFF)
−1.2 V VGS = 0 V 1.0 −
0.2 V 0.8 0.6 −
0.4 V 0.4 −
0.6 V 0 VDS = 15 V 0.6 0.4 0 −
1.2 25 5 10 15 20 VDS, DRAIN
−
SOURCE VOLTAGE (VOLTS) 0.8 0.2 −
0.8 V −
1.0 V 0.2 0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.0 Figure 3. Typical Drain Characteristics 0 Figure 4. Common Source Transfer Characteristics 5 5 VGS = 0 V VGS(OFF)
−
3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) −
0.8 −
0.4 VGS, GATE
−
SOURCE VOLTAGE (VOLTS) VGS(OFF)
−
3.5 V 3 −
1 V 2 −
2 V 1 4 3 VDS = 15 V 2 1 −
3 V 0 0 5 10 15 20 VDS, DRAIN
−
SOURCE VOLTAGE (VOLTS) 0 −
5 25 Figure 5. Typical Drain Characteristics 10 VGS(OFF)
−
5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V −
1 V 6 −
2 V 4 −
3 V 2 0 Figure 6. Common Source Transfer Characteristics 10 8 −
3 −
2 −
1 −
4 VGS, GATE
−
SOURCE VOLTAGE (VOLTS) −
4 V VGS(OFF)
−
5.8 V 8 6 VDS = 15 V 4 2 −
5 V 0 −
7 0 0 5 10 15 20 VDS, DRAIN
−
SOURCE VOLTAGE (VOLTS) 25 Figure 7. Typical Drain Characteristics −
6 −
5 −
4 −
3 −
2 −
1 VGS, GATE
−
SOURCE VOLTAGE (VOLTS) Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 3 0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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