BMS4003

BMS4003 Ordering number : ENA1923 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BMS4003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)=50mΩ (typ.) Input capacitance Ciss=680pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 100 V ±30 V 18 A PW≤10μs, duty cycle≤1% 72 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 53 mJ 15 A Avalanche Current *2 Tc=25°C Note : *1 VDD=60V, L=200μH, IAV=15A (Fig.1) *2 L≤200μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7525-002 • Package : TO-220ML(LS) • JEITA, JEDEC : SC-67, SOT-186A • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 10.0 4.5 2.8 Marking Electrical Connection 2 16.0 7.2 3.5 3.2 MS4003 3.6 LOT No. 1 1.6 14.0 1.2 3 0.75 1 2 3 2.4 0.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) http://semicon.sanyo.com/en/network 21611QA TKIM TC-00002572 No. A1923-1/5 BMS4003 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=9A Static Drain-to-Source On-State Resistance RDS(on) ID=9A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance min typ Unit max 100 ID=1mA, VGS=0V VDS=100V, VGS=0V V 1 μA ±100 nA 3 5 7.8 V S 50 65 mΩ 680 pF 130 pF Crss 33 pF Turn-ON Delay Time td(on) 16 ns Rise Time tr 33 ns Turn-OFF Delay Time td(off) 27 ns Fall Time tf Total Gate Charge Qg VDS=20V, f=1MHz See Fig.2 15 ns 11.4 nC 4.1 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=18A, VGS=0V 0.9 Reverse Recovery Time trr See Fig.3 60 ns Reverse Recovery Charge Qrr IS=18A, VGS=0V, di/dt=100A/μs 114 nC VDS=60V, VGS=10V, ID=18A 3.8 Fig.1 Avalanche Resistance Test Circuit D ≥50Ω 10V 0V V Fig.2 Switching Time Test Circuit 10V 0V L VIN VDD=60V ID=9A RL=6.7Ω VIN G D BMS4003 S nC 1.2 VDD 50Ω VOUT PW=10μs D.C.≤1% G P.G 50Ω S BMS4003 Fig.3 Reverse Recovery Time Test Circuit BMS4003 D L G S VDD Driver MOSFET No. A1923-2/5 BMS4003 ID -- VDS Tc=25°C 32 8V 28 VGS=6V 12 8 4 4 0.5 1.0 1.5 2.0 2.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=9A Single pulse 120 100 80 Tc=75°C 60 25°C 40 --25°C 20 0 0 2 6 4 8 10 12 Gate-to-Source Voltage, VGS -- V 25°C -Tc= 75° 2 C 1.0 7 5 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A SW Time -- ID 1000 7 5 td(on) tr 10 7 5 3 9 10 IT16319 Single pulse 100 80 V, =10 V GS 60 9A I D= 40 20 --25 0 25 50 75 100 125 150 IT16321 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss 7 1.2 IT16323 Ciss, Coss, Crss -- VDS 1000 f=1MHz 5 Ciss, Coss, Crss -- pF 3 2 td(off) 8 Diode Forward Voltage, VSD -- V 3 2 tf 7 120 0.01 5 7 100 IT16322 VDD=60V VGS=10V 100 7 5 6 140 100 7 5 3 2 3 0.1 0.1 5 Case Temperature, Tc -- °C Source Current, IS -- A C 25° 4 RDS(on) -- Tc 0 --50 14 2 3 160 3 3 2 Gate-to-Source Voltage, VGS -- V VDS=10V 10 7 5 1 IT16320 | yfs | -- ID 100 7 5 0 IT16318 RDS(on) -- VGS 140 0 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 160 Forward Transfer Admittance, | yfs | -- S 12 8 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 16 --25°C 16 20 Tc=7 5°C --25° C 20 24 25 °C 24 Tc=7 5°C 25°C V 15 28 Drain Current, ID -- A VDS=10V V 10 32 0 ID -- VGS 36 Drain Current, ID -- A 36 3 2 Coss 100 7 5 Crss 3 2 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16324 10 0 5 10 15 25 20 Drain-to-Source Voltage, VDS -- V 30 IT16325 No. A1923-3/5 BMS4003 VGS -- Qg 10 VDS=60V ID=18A Drain Current, ID -- A 8 7 6 5 4 3 1 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC PD -- Ta 1.0 0.5 20 40 60 80 100 120 Ambient Temperature, Ta -- °C EAS -- Ta 120 0m 140 160 IT16328 10 μs 0μ s 1m s s op era tio n Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V PD -- Tc 30 1.5 0 10 DC IT16326 2.0 0 Avalanche Energy derating factor -- % 12 10 ID=18A 0.01 0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 IDP=72A (PW≤10μs) 10 7 5 3 2 0.1 7 5 3 2 2 ASO s m 10 Gate-to-Source Voltage, VGS -- V 9 100 7 5 3 2 5 7 100 IT16327 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16329 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16330 No. A1923-4/5 BMS4003 Note on usage : Since the BMS4003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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