BPW38

BPW38 HERMETIC SILICON PHOTODARLINGTON PACKAGE DIMENSIONS FEATURES • Hermetically sealed package • Narrow reception angle • European “Pro Electron” registered 0.209 (5.31) 0.184 (4.67) DESCRIPTION 0.030 (0.76) NOM 0.255 (6.48) • The BPW38 is a silicon photodarlington mounted in narrow angle TO-18 package. 0.50 (12.7) MIN SCHEMATIC C 0.020 (0.51) 3X Base B 0.100 (2.54) 0.050 (1.27) Emitter Collector (Case) E 0.040 (1.02) Ø0.100 (2.54) 0.040 (1.02) 45° NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD  2001 Fairchild Semiconductor Corporation DS300280 3/15/01 1 OF 4 Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 25 25 12 300 600 Unit °C °C °C °C V V V mW mW www.fairchildsemi.com BPW38 HERMETIC SILICON PHOTODARLINGTON ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown IC = 10 mA, Ee = 0 BVCEO 25 — — V Emitter-Base Breakdown IE = 100 µA, Ee = 0 BVEBO 12 — — V Collector-Base Breakdown IC = 100 µA, Ee = 0 BVCBO 25 — — V Collector-Emitter Leakage VCE = 12 V, Ee = 0 ICEO — — 100 nA 0 — ±8 — Deg. IC(ON) 7.5 — — mA tr — 300 — µs tf — 250 — µs Reception Angle at 1/2 Sensitivity Ee = 0.125 mW/cm2 On-State Collector Current VCE = 5 V(7) IC = 10 mA, VCC = 10 V Rise Time RL = 100 1 IC = 10 mA, VCC = 10 V Fall Time RL = 100 1 TYPICAL PERFORMANCE CURVES IL/IL @25˚C - RELATIVE LIGHT CURRENT IL - NORMALIZED LIGHT CURRENT 100 Ee = 5.0 mW/cm2 Ee = 2.0 mW/cm2 Ee = 1.0 mW/cm2 10 Ee = 0.5 mW/cm2 Ee = 0.2 mW/cm2 1.0 Ee = 0.1 mW/cm2 Ee = 0.05 mW/cm2 Normalized to: VCE = 5 V Ee = .2 mW/cm2 0.1 0 5 10 15 20 25 30 35 1.0 0.1 Normalized to: VCE = 5 V Ee = 0.2 mW/cm2 0.01 -50 VCE - COLLECTOR TO EMITTER (V) -25 0 25 50 75 100 125 TA - TEMPERATURE (˚C) Fig. 1 Light Current vs. Collector to Emitter Voltage www.fairchildsemi.com 10 Fig. 2 Relative Light Current vs. Ambient Temperature 2 OF 4 3/15/01 DS300280 BPW38 HERMETIC SILICON PHOTODARLINGTON 1.0 110 0.9 100 0.8 90 RELATIVE AMPLITUDE RELATIVE SPECTRAL RESPONSE TYPICAL PERFORMANCE CURVES 0.7 0.6 0.5 0.4 0.3 0.2 80 70 60 50 40 30 20 0.1 10 0 0 400 500 600 700 800 900 1000 1100 1200 -90˚ -70˚ -30˚ -10˚ 10˚ 30˚ 50˚ D- WAVELENGTH - NANOMETERS DEGREES Fig. 3 Spectral Response Curve Fig. 4 Angular Response 100 BPW38 Load Resistance 101 IL - LIGHT CURRENT (mA) -50˚ 1001 10 V CC 70˚ 1.0 V 90 % INPUT LED Normalized to: RL = 1001 IL = 10 mA 90˚ OUTPUT PULSE 10 % I RL OUTPUT tf td 10001 1.0 tr VCC = 10 V INPUT PULSE 0.1 t ON = td + tr 0.01 0.1 ts 1.0 10 t OFF = ts + tf 100 RELATIVE SWITCHING SPEED Fig. 5 Light Current vs. Relative Switching Speed DS300280 3/15/01 Fig. 6 Test Circuit and Voltage Waveforms 3 OF 4 www.fairchildsemi.com BPW38 HERMETIC SILICON PHOTODARLINGTON DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 3/15/01 DS300280