BS108ZL1

BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features http://onsemi.com 250 mAMPS 200 VOLTS RDS(on) = 8 W N−Channel D • Low Drive Requirement, VGS = 3.0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of many Devices • Pb−Free Packages are Available* G MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage Drain Current Continuous (Note 1) Pulsed (Note 2) Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID IDM PD 350 6.4 TJ, Tstg −55 to +150 mW mW/°C °C 1 2 3 S Value 200 ±20 250 500 BS108 AYWW G G Unit Vdc Vdc mAdc MARKING DIAGRAM TO−92 CASE 29−11 STYLE 30 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. BS108 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BS108 BS108G BS108ZL1 BS108ZL1G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping 1000 Units/Box 1000 Units/Box 2000/Ammo Pack 2000/Ammo Pack *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 2 Publication Order Number: BS108/D BS108 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDSS = 130 Vdc, VGS = 0) Gate−Body Leakage Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (ID = 1.0 mA, VDS = VGS) Static Drain−to−Source On−Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) Forward Transconductance (ID = 120 mA, VDS = 20 V) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn−On Time (See Figure 1) Turn−Off Time (See Figure 1) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. td(on) td(off) − − − − 15 15 ns ns Ciss − Coss − Crss − − 10 − 30 pF − 150 pF pF VGS(th) 0.5 rDS(on) − − IDSX − gFS − 0.33 − − 25 Mhos − − 10 8.0 mA − 1.5 W Vdc V(BR)DS 200 IDSS − IGSSF − − 10 − 30 nAdc − − − Vdc nAdc Symbol Min Typ Max Unit RESISTIVE SWITCHING +25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1.0 M 20 dB 50 W ATTENUATOR TO SAMPLING SCOPE 50 W INPUT Vout ton 90% toff 90% 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50% OUTPUT V INVERTED out Figure 1. Switching Test Circuit Figure 2. Switching Waveforms http://onsemi.com 2 BS108 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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