BS270-D74Z

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BS270 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS T A = 25°C unless otherwise noted BS270 Units Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1MΩ) 60 V VGSS Gate-Source Voltage - Continuous ±20 V - Non Repetitive (tp < 50µs) ID Drain Current - Continuous PD Maximum Power Dissipation - Pulsed Derate Above 25°C ±40 400 mA 2000 625 mW 5 mW/°C TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C 200 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistacne, Junction-to-Ambient © 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: BS270/D Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V TJ = 125oC 1 µA 500 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSF Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -10 nA 2.5 V 1.2 2 Ω 2 3.5 VGS = 4.5 V, ID = 75 mA 1.8 3 VGS = 10 V, ID = 500 mA 0.6 1 0.14 0.225 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 1 TJ = 125oC VDS(ON) Drain-Source On-Voltage ID(ON) On-State Drain Current gFS Forward Transconductance VGS = 4.5 V, ID = 75 mA VGS = 10 V, VDS > 2 VDS(on) 2000 2.1 2700 VGS = 4.5 V, VDS > 2 VDS(on) 400 600 VDS > 2 VDS(on), ID = 200 mA 100 320 V mA mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 20 50 pF 11 25 pF 4 5 pF 10 ns 10 ns 400 mA 2000 mA 1.2 V SWITCHING CHARACTERISTICS (Note 1) ton Turn-On Time toff Turn-Off Time VDD = 30 V, ID = 500 m A, VGS = 10 V, RGEN = 25 Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 400 mA (Note 1) Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2 0.88 Typical Electrical Characteristics 2 3 9.0 V GS =4.0V 8.0 , DRAIN-SOURCE CURRENT (A) 7.0 RDS(on) , NORMALIZED 1.5 6.0 1 5.0 0.5 I D 4.0 DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5.0 6 .0 2 7.0 8.0 1.5 9.0 10 1 0.5 5 0 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 3 1.75 V GS = 10V R DS(on) , NORMALIZED ID = 500mA 1.5 1.25 1 0.75 0.5 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.4 Figure 1. On-Region Characteristics. V G S = 10V 2.5 TJ = 125°C 2 1.5 25°C 1 -55°C 0.5 0 150 0 Figure 3. On-Resistance Variation with Temperature. 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.1 VDS = 10V T J = -55°C 25°C 125°C Vth , NORMALIZED 1.6 1.2 0.8 0.4 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 10 GATE-SOURCE THRESHOLD VOLTAGE 2 ID , DRAIN CURRENT (A) 4.5 2.5 V DS = VGS I D = 1 mA 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) Figure 6. Gate Threshold Variation with Temperature. www.onsemi.com 3 125 150 Typical Electrical Characteristics (continued) 2 ID = 10µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0.5 TJ = 125°C 0.1 25°C 0.05 -55°C 0.01 0.005 0.001 0.2 150 0.4 0.6 V SD 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature. 10 60 40 V GS , GATE-SOURCE VOLTAGE (V) 20 C oss 10 5 C rss f = 1 MHz V GS = 0V 2 V DS = 25V ID = 5 0 0 m A C iss CAPACITANCE (pF) V GS = 0V 1 1.075 IS , REVERSE DRAIN CURRENT (A) , NORMALIZED DSS BV DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1 8 6 4 2 0 1 2 3 V DS 5 10 20 30 50 0 0.4 0.8 , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. t on t d(on) R GEN t d(off) tf 90% 90% V OUT Output, Vout 10% 10% 90% DUT G Input, Vin 50% 50% 10% S Figure 11. Switching Test Circuit. 2 t off tr RL D VGS 1.6 Figure 10. Gate Charge Characteristics. VDD V IN 1.2 Q g , GATE CHARGE (nC) Pulse Width Figure 12. Switching Waveforms. www.onsemi.com 4 Inverted Typical Electrical Characteristics (continued) 3 2 I D , DRAIN CURRENT (A) 1 RD S( ON im )L 10 it 1m 0.5 0u s s 10 ms 10 0m s 1s 0.1 10 s DC 0.05 V GS = 10V SINGLE PULSE T A = 25°C 0.01 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 13. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.1 R θJA (t) = r(t) * R θJA 0.2 0.2 R θJA = (See Datasheet) 0.1 P(pk) 0.05 0.05 t1 0.02 0.02 0.01 0.0001 Single Pulse 0.001 t2 TJ - T A = P * Rθ JA (t) Duty Cycle, D = t1 /t2 0.01 0.01 0.1 t 1, TIME (sec) 1 Figure 14. Transient Thermal Response Curve. www.onsemi.com 5 10 100 300 TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample ON SEMICONDUCTOR CORPORATION HTB:B QTY: 10000 CBVK741B019 PN2222N NSID: D/C1: See Fig 2.0 for various Reeling Styles LOT: SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box 333mm x 231mm x 183mm Intermediate Box (TO-92) BULK PACKING INFORMATION DESCRIPTION BULK OPTION LEADCLIP DIMENSION QUANTITY J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO LEADCLIP 2.0 K / BOX NO LEADCLIP 2.0 K / BOX NO EOL CODE TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 L34Z TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 Customized Label F63TNR Label Customized Label EOL CODE 5 Ammo boxes per Intermediate Box See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option www.onsemi.com 6 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM www.onsemi.com 7 TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 W3 W2 Note: All dimensions are inches D3 www.onsemi.com 8 1.690 2.090 TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code www.onsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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