BSP19AT1G

BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features http://onsemi.com  High Voltage: V(BR)CEO of 250 and 350 V  The SOT-223 Package Can Be Soldered Using Wave or Reflow  SOT-223 Package Ensures Level Mounting, Resulting in Improved  The Formed Leads Absorb Thermal Stress During Soldering,     SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 Thermal Conduction, and Allows Visual Inspection of Soldered Joints Eliminating the Possibility of Damage to the Die PNP Complement is BSP16T1 Moisture Sensitivity Level (MSL): 1 ESD: Human Body Model (HBM) = 4 KV Machine Model (MM) = 400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 4 MARKING DIAGRAM 4 Collector MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Symbol VCEO VCBO VEBO IC Value 350 400 5.0 100 Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318E TO-261AA STYLE 1 1 Base AYW SP19A G G 2 Collector 3 Emitter THERMAL CHARACTERISTICS Characteristic Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C Thermal Resistance, Junction--to--Ambient Junction and Storage Temperature Range Symbol PD Max 0.8 6.4 RθJA Tstg 156 --65 to +150 Unit W mW/C C/W C A = Assembly Location Y = Year W = Work Week SP19A = Specific Device Code G = Pb--Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. ORDERING INFORMATION Device BSP19AT1G Package SOT--223 (Pb--Free) Shipping† 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 September, 2010 - Rev. 8 - 1 Publication Order Number: BSP19AT1/D BSP19AT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Cutoff Current (VCB = 400 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) Current-Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) 2. Pulse Test: Pulse Width  300 ms, Duty Cycle = 2.0% hFE fT VCE(sat) VBE(sat) 40 70 ----0.5 1.3 -MHz Vdc Vdc V(BR)CEO ICBO IEBO 350 ---20 10 Vdc nAdc mAdc Symbol Min Max Unit http://onsemi.com 2 BSP19AT1G 1000 VCE = 10 V hFE, DC CURRENT GAIN TJ = 125C 100 TJ = 25C TJ = --55C 10 VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 TJ = -- 55C 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) TJ = 125C TJ = 25C IC/IB = 10 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 1. DC Current Gain VBE(on), BASE--EMITTER ON VOLTAGE (V) Figure 2. Collector Saturation Voltage VBE(sat), BASE--EMITTER SATURATION VOLTAGE (V) 1.2 IC/IB = 10 1 TJ = -- 55C 0.8 0.6 0.4 0.2 0 0.0001 TJ = 25C TJ = 125C 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 TJ = 25C TJ = 125C VCE = 10 V TJ = -- 55C 0.001 0.01 1 0.001 0.01 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Saturation Voltage Figure 4. Base ON Voltage 10000 fτ, CURRENT--GAIN -- BANDWIDTH PRODUCT (MHz) 1000 C, CAPACITANCE (pF) TJ = 25C f = 5.0 MHz VGS = 10 V 100 CIBO TJ = 25C f = 1.0 MHz VCE = 10 V 100 10 COBO 10 1 0.1 1 10 100 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain - Bandwidth Product - Figure 6. Capacitance http://onsemi.com 3 BSP19AT1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E--04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 ----------1.75 2.00 7.00 7.30 10 -MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 -----0.069 0.276 -MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 -----0.078 0.287 10 4 HE 1 2 3 E e1 b e A θ L L1 C 0.08 (0003) θ A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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