BSP51

BSP51 NPN Darlington Transistor This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03. 4 SOT-223 3 1 Absolute Maximum Ratings Symbol 1. Base 2. Collector 3. Emitter 2 * Ta = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 90 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (Continuous) 500 mA TJ, TSTG Junction Temperature, Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol * Ta = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5.0 V ICES Collector Cutoff Current VCE = 80 V, IBE = 0 10 μA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 10 μA On Characteristics hFE DC Current Gain IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V VCE(sat) Collector-Emitter Saturation Voltage * IC = 500 mA, IB = 0.5 mA 1.3 V VBE(sat) Base-Emitter Saturation Voltage * 1.9 V IC = 500 mA, IB = 0.5 mA 1000 2000 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2007 Fairchild Semiconductor Corporation BSP51 Rev. A 1 www.fairchildsemi.com BSP51 NPN Darlington Transistor June 2007 Symbol * Ta = 25°C unless otherwise noted Characteristic PD Total Device Dissipation R θ JA Derate above 25°… Thermal Resistance, Junction to Ambient Max Units 1000 8.0 mW mW/℃ 125 ℃/W *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. 2 BSP51 Rev. A www.fairchildsemi.com BSP51 NPN Darlington Transistor Thermal Characteristics FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I23 3 BSP51 Rev. A www.fairchildsemi.com BSP51 NPN Darlington Transistor tm