BSR14

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSR14 NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. • Sourced from Process 19. • See BCW65C for characteristics. C E SOT-23 B Mark:U8 Absolute Maximum Ratings* Symbol Ta = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V Collector Current - Continuous 800 mA -55 to +150 C IC TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA Ta = 25C unless otherwise noted Max. Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Units *BSR14 350 2.8 mW mW/C 357 C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. © 2012 Fairchild Semiconductor Corporation BSR14 Rev. B0 www.fairchildsemi.com 1 BSR14 — NPN General Purpose Amplifier September 2012 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10A, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 10A, IE = 0 75 V IE = 10A, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 60V, VCB = 60V, Ta = 150°C 10 10 nA A ICEX Collector-Cutoff Current VCE = 60V, VEB = 3.0V 10 nA IBEX Reverse Base Current VCE = 60V, VEB = 3.0V 20 nA IEBO Emitter-Cutoff Current VEB = 3.0V, IC = 0 15 nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 10V 35 50 75 100 50 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 Current Gain - Bandwidth Product IC = 20mA, VCE = 20V, f = 100mHz 300 Collector-Base Capacitance VCB = 10V, IE = 0, f = 1.0MHz hie Input Impedance VCE = 10V, IC = 1.0mA, f = 1.0kHz hfe Small-Signal Current Gain hoe Output Admittance 300 0.3 1.0 V V 1.2 2.0 V V SMALL SIGNAL CHARACTERISTICS fT CCB MHz 8.0 pF 2.0 8.0 k VCE = 10V, IC = 1.0mA, f = 1.0kHz 50 300 VCE = 10V, IC = 1.0mA, f = 1.0kHz 5 35 S 10 ns 25 ns 225 ns 60 ns SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) © 2012 Fairchild Semiconductor Corporation BSR14 Rev. B0 www.fairchildsemi.com 2 BSR14 — NPN General Purpose Amplifier Electrical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I62 © Fairchild Semiconductor Corporation www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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