BSS123LT1

BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS(on) = 6
N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) VGS VGSM ± 20 ± 40 Vdc Vpk ID 0.17 0.68 Drain Current − Continuous (Note 1) − Pulsed (Note 2) 1 Adc IDM 2 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 1 Symbol Max Unit PD 225 1.8 mW mW/°C RJA 556 °C/W TJ, Tstg −55 to +150 °C SOT−23 CASE 318 STYLE 21 SA M Rating 2 SA M = Device Code = Date Code PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width
300 s, Duty Cycle
2.0%. 3. FR−5 = 1.0
0.75
0.062 in. 1 Gate 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 5 1 Publication Order Number: BSS123LT1/D BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 100 − − Vdc − − − − 15 60 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 Adc) Adc Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C IDSS Gate−Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS − − 50 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 − 2.8 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) − 5.0 6.0
gfs 80 − − mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 20 − pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 9.0 − pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − 4.0 − pF td(on) − 20 − ns td(off) − 40 − ns VSD − − 1.3 V ON CHARACTERISTICS (Note 4) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS(4) Turn−On Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50
) Turn−Off Delay Time REVERSE DIODE Diode Forward On−Voltage (ID = 0.34 Adc, VGS = 0 Vdc) 4. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%. ORDERING INFORMATION Package Shipping† SOT−23 3,000 Tape & Reel SOT−23 (Pb−Free) 3,000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel Device BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) 9.0 0.8 0.6 0.4 0.2 10 0 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE (NORMALIZED) 2.2 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −
60 −
20 +
20 +
60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics 2.4 1.8 25°C 125°C Figure 1. Ohmic Region 2.0 −
55 °C +
100 +
140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 −
60 Figure 3. Temperature versus Static Drain−Source On−Resistance −
20 +
20 +
60 T, TEMPERATURE (°C) +
100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +
140 BSS123LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm  inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. BSS123LT1/D