BSS123LT1G

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 www.onsemi.com 170 mAMPS 100 VOLTS RDS(on) = 6 W Features • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant N−Channel 3 MAXIMUM RATINGS Rating Drain−Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous (Note 1) − Pulsed (Note 2) Symbol Value Unit VDSS 100 Vdc VGS VGSM ± 20 ± 40 ID 0.17 0.68 1 Vdc Vpk 2 Adc IDM MARKING DIAGRAM & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Drain 3 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SA MG G 2 Symbol Max Unit PD 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR− 5 = 1.0  0.75  0.062 in. SOT−23 CASE 318 STYLE 21 SA M G 1 Gate 2 Source = Device Code = Date Code = Pb−Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994 March, 2019 − Rev. 11 1 Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 100 − − Vdc − − − − 15 60 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 mAdc) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 100 Vdc) TJ = 125°C IDSS Gate−Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS − − 50 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 1.6 − 2.6 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) − − 6.0 W gfs 80 − − mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 20 − pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 9.0 − pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − 4.0 − pF td(on) − 20 − ns td(off) − 40 − ns VSD − − 1.3 V mAdc ON CHARACTERISTICS (Note 4) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS(4) Turn−On Delay Time Turn−Off Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 W) REVERSE DIODE Diode Forward On−Voltage (ID = 0.34 Adc, VGS = 0 Vdc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† BSS123LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BVSS123LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel BSS123LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BSS123LT7G SOT−23 (Pb−Free) 3,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 1.6 1.6 6V 1.0 5V 0.8 4V 0.6 0.4 3V 0.2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0 1 2 4 3 5 6 8 7 9 1.2 1.0 0.8 0.6 TJ = 25°C 0.4 0 10 TJ = 150°C 1 TJ = −55°C 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 50 3.50 3.25 VGS = 4.5 V 3.00 2.75 VGS = 10 V 2.50 2.25 80 100 120 140 160 180 40 30 Ciss 20 Coss 10 0 200 Crss 0 30 40 50 60 70 80 Figure 3. On−Resistance vs. Drain Current and Gate Voltage Figure 4. Capacitance Variation 90 100 1 VGS = 0 V 8 6 QGS TJ = 25°C VGS = 10 V VDS = 30 V ID = 0.2 A QGD 2 0 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QT 4 10 ID, DRAIN CURRENT (mA) 10 6 TJ = 25°C VGS = 0 TJ = 25°C C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS = 10 V 0.2 IS, SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1.4 ID, DRAIN CURRENT (A) TJ = 25°C 1.4 VGS = 10 V 8V 0 1 2 3 4 5 6 7 0.1 0.01 0.001 TJ = 125°C 0.0001 8 0 0.2 TJ = 25°C 0.4 TJ = −55°C 0.6 0.8 1.0 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 5. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 3 1.2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 1 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C TJ = 150°C 100 ms 1 ms 10 ms 0.1 100 ms 0.01 0.001 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 dc 100 10 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE Figure 7. Maximum Rated Forward Biased Safe Operating Area 1000 D = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 Single Pulse 0.1 0.00001 0.000001 1 oz. Cu Pad, 5mm thick, 25mm2 area 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 8. Thermal Response www.onsemi.com 4 1 10 100 1000 BSS123LT1G, BVSS123LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BSS123LT1/D