BSS123LT3G

DATA SHEET www.onsemi.com MOSFET – Power 170 mAmps, 100 Volts 170 mAMPS 100 VOLTS RDS(on) = 6 W N−Channel SOT−23 BSS123LT1G, BVSS123LT1G N−Channel 3 Features • BVSS Prefix for Automotive and Other Applications Requiring • 1 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 2 MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current − Continuous (Note 1) − Pulsed (Note 2) Adc ID IDM 0.17 0.68 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 1 SA MG G 2 SOT−23 CASE 318 STYLE 21 SA M G 1 Gate 2 Source = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Drain 3 *Date Code orientation and/or position may vary depending upon manufacturing location. Symbol Max Unit PD 225 1.8 mW mW/°C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR− 5 = 1.0  0.75  0.062 in. © Semiconductor Components Industries, LLC, 1994 November, 2021 − Rev. 12 1 Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 100 − − Vdc − − − − 15 60 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 mAdc) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 100 Vdc) TJ = 125°C IDSS Gate−Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS − − 50 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 1.6 − 2.6 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) − − 6.0 W gfs 80 − − mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 20 − pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 9.0 − pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − 4.0 − pF td(on) − 20 − ns td(off) − 40 − ns VSD − − 1.3 V mAdc ON CHARACTERISTICS (Note 4) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS(4) Turn−On Delay Time Turn−Off Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 W) REVERSE DIODE Diode Forward On−Voltage (ID = 0.34 Adc, VGS = 0 Vdc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† BSS123LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BVSS123LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel BSS123LT7G SOT−23 (Pb−Free) 3,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 1.6 1.6 6V 1.0 5V 0.8 4V 0.6 0.4 3V 0.2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0 1 2 4 3 5 6 8 7 9 1.2 1.0 0.8 0.6 TJ = 25°C 0.4 0 10 TJ = 150°C 1 TJ = −55°C 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 50 3.50 3.25 VGS = 4.5 V 3.00 2.75 VGS = 10 V 2.50 2.25 80 100 120 140 160 180 40 30 Ciss 20 Coss 10 0 200 Crss 0 30 40 50 60 70 80 Figure 3. On−Resistance vs. Drain Current and Gate Voltage Figure 4. Capacitance Variation 90 100 1 VGS = 0 V 8 6 QGS TJ = 25°C VGS = 10 V VDS = 30 V ID = 0.2 A QGD 2 0 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QT 4 10 ID, DRAIN CURRENT (mA) 10 6 TJ = 25°C VGS = 0 TJ = 25°C C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS = 10 V 0.2 IS, SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1.4 ID, DRAIN CURRENT (A) TJ = 25°C 1.4 VGS = 10 V 8V 0 1 2 3 4 5 6 7 0.1 0.01 0.001 TJ = 125°C 0.0001 8 0 0.2 TJ = 25°C 0.4 TJ = −55°C 0.6 0.8 1.0 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 5. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 3 1.2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 1 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C TJ = 150°C 100 ms 1 ms 10 ms 0.1 100 ms 0.01 0.001 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 dc 100 10 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE Figure 7. Maximum Rated Forward Biased Safe Operating Area 1000 D = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 Single Pulse 0.1 0.00001 0.000001 1 oz. Cu Pad, 5mm thick, 25mm2 area 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 8. Thermal Response www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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