BSS138
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These
N-Channel
enhancement mode field
effect transistors are produced using
ON
Semicondcutor’s proprietary, high cell density, DMOS
technology. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These
products are particularly suited for low voltage, low
current applications such as small servo motor
control, power MOSFET gate drivers, and other
switching applications.
• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package
D
D
S
S
G
SOT-23
G
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1)
– Pulsed
(Note 1)
Derate Above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
TL
Units
50
V
±20
V
0.22
A
0.88
Maximum Power Dissipation
PD
Ratings
0.36
2.8
W
mW/°C
−55 to +150
°C
300
°C
350
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
SS
BSS138
7’’
8mm
3000 units
2005 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
BSS138/D
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA
VGS = 0 V,
ID = 250 µA,Referenced to 25°C
VDS = 50 V,
50
V
72
VGS = 0 V
VDS = 50 V, VGS = 0 V TJ = 125°C
IGSS
Gate–Body Leakage.
On Characteristics
mV/°C
0.5
µA
5
µA
VDS = 30 V,
VGS = 0 V
100
nA
VGS = ±20 V,
VDS = 0 V
±100
nA
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
gFS
VDS = VGS,
ID = 1 mA
0.8
ID = 1 mA,Referenced to 25°C
On–State Drain Current
ID = 0.22 A
VGS = 10 V,
ID = 0.22 A
VGS = 4.5 V,
VGS = 10 V, ID = 0.22 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
0.2
Forward Transconductance
VDS = 10V,
ID = 0.22 A
0.12
VDS = 25 V,
f = 1.0 MHz
V GS = 0 V,
1.3
–2
1.5
0.7
1.0
1.1
3.5
6.0
5.8
V
mV/°C
Ω
A
0.5
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 15 mV, f = 1.0 MHz
27
pF
13
pF
6
pF
9
Ω
(Note 2)
VDD = 30 V,
VGS = 10 V,
VDS = 25 V,
VGS = 10 V
ID = 0.29 A,
RGEN = 6 Ω
ID = 0.22 A,
2.5
5
9
18
ns
ns
20
36
ns
7
14
ns
1.7
2.4
nC
0.1
nC
0.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.44 A(Note 2)
0.8
0.22
A
1.4
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
BSS138
Electrical Characteristics
BSS138
Typical Characteristics
1
VGS = 10V
3.4
6.0V
4.5V
ID, DRAIN CURRENT (A)
0.8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
3.0V
0.6
2.5V
0.4
0.2
2.0V
3
VGS = 2.5V
2.6
2.2
3.0V
1.8
3.5V
4.0V
4.5V
1.4
6.0V
10V
1
0.6
0
0
0.5
1
1.5
2
2.5
0
3
0.2
Figure 1. On-Region Characteristics.
0.8
1
4.1
ID = 220mA
VGS = 10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.6
1.4
1.2
1
0.8
ID = 110mA
3.5
2.9
TA = 125oC
2.3
1.7
TA = 25oC
1.1
0.5
0.6
-50
-25
0
25
50
75
100
125
150
0
2
o
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
0.6
o
o
TA = -55 C
0.5
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
VDS = 10V
ID, DRAIN CURRENT (A)
0.4
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
25 C
125oC
0.4
0.3
0.2
0.1
0
0.1
TA = 125oC
25oC
0.01
-55oC
0.001
0.0001
0.5
1
1.5
2
2.5
3
3.5
0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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BSS138
Typical Characteristics
100
ID = 220mA
VDS = 8V
f = 1 MHz
VGS = 0 V
25V
80
8
30V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
60
CISS
40
COSS
2
20
0
0
CRSS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
1.8
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
40
50
P(pk), PEAK TRANSIENT POWER (W)
5
100µs
1
1ms
10ms
100ms
1s
RDS(ON) LIMIT
0.1
DC
VGS = 10V
SINGLE PULSE
RθJA = 350oC/W
0.01
TA = 25oC
0.001
0.1
1
10
100
SINGLE PULSE
RθJA = 350°C/W
TA = 25°C
4
3
2
1
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
30
Figure 8. Capacitance Characteristics.
10
ID, DRAIN CURRENT (A)
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
0.2
0.1
RθJA = 350 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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