DATA SHEET
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N-Channel Logic Level
Enhancement Mode Field
Effect Transistor
SOT−23, 3 Lead, 1.25X2
CASE 419AB
BSS138W
Description
D
These N−Channel Enhancement Mode Field Effect Transistor.
These products have been Designed to minimize on−state resistance
while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current
applications such as small servo motor control, power MOSFET gate
drivers, and other switching applications.
S
G
Features
• RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A
•
•
•
•
MARKING DIAGRAM
RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A
High Density Cell Design For Extremely Low RDS(on)
Rugged and Reliable
Compact Industry Standard SOT−323 Surface Mount Package
These Devices are Pb−Free and Halide Free
Y
A138
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Parameter
Symbol
Value
Unit
VDSS
Drain to Source Voltage
50
V
VGSS
Gate to Source Voltage
±20
V
ID
Drain Current
− Continuous (Note 1)
− Pulsed
0.21
0.84
A
A
TJ, TSTG
Operating and Storage Junction
Temperature Range
−55 to +150
°C
TL
Maximum Lead Temperature for
Soldering Purposes, 1/16” from
Case for 10 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
June, 2022 − Rev 2
Y
A
138
1
= Year
= Assembly Plant Code
= Specific Device Code
ORDERING INFORMATION
Device
BSS138W
Package
SOT−323
(Pb−Free)
Shipping†
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BSS138W/D
BSS138W
THERMAL CHARACTERISTICS
Symbol
PD
RθJA
Parameter
Value
Unit
Maximum Power Dissipation Derate Above 25°C (Note 1)
340
2.72
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 1)
367
°C/W
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 250 mA
50
−
−
V
Breakdown Voltage Temperature Coefficient
ID = 250 mA, Referenced to 25°C
−
71
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
VDS = 50 V, VGS = 0 V, TJ = 125°C
VDS = 30 V, VGS = 0 V
−
−
0.5
5
100
mA
mA
nA
IGSS
Gate−Body Leakage
VGS = ±20 V, VDS = 0 V
−
−
±100
nA
0.8
1.3
1.5
V
DBV DSS(th)
DT J
On Characteristics (Note2)
VGS(th)
Gate to Threshold Voltage
VDS = VGS, ID = 1mA
DV GS(th)
Gate to Threshold Voltage
Temperature Coefficient
ID = 1 mA, Referenced to 25°C
−
−3.9
−
mV/°C
Static Drain−Source On−Resistance
VGS = 10 V, ID = 0.22 A
VGS = 4.5 V, ID = 0.22 A
VGS = 10 V, ID = 0.22 A, TJ = 125°C
−
1.17
1.36
2.16
3.5
6.0
5.8
W
W
W
On−State Drain Current
VGS = 10 V, VDS = 5 V
0.2
−
A
Forward Transconductance
VDS = 10 V, ID = 0.22 A
0.12
−
S
DT J
RDS(on)
ID(on)
gFS
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
−
38
−
pF
−
5.9
−
pF
−
3.5
−
pF
VGS = 15 mV, f = 1.0 MHz
−
11
−
W
VDD = 30 V, ID = 0.29 A,
VGS = 10 V, RGEN = 6 Ω
−
2.3
5
ns
−
1.9
18
ns
Switching Characteristics
td(on)
Turn−On Delay Time
tr
Turn−On Rise Time
td(off)
Turn−Off Delay Time
−
6.7
36
ns
tf
Turn−Off Fall Time
−
6.5
14
ns
−
1.1
−
nC
−
0.12
−
nC
−
0.22
−
nC
Maximum Continuous Drain–Source Diode Forward Current
−
−
0.22
A
Drain−Source Diode Forward Voltage
−
−
1.4
V
Qg
Total Gate Change
Qgs
Gate−Source Change
Qgd
Gate−Drain Change
VDS = 25 V, ID = 0.22 A,
VGS = 10 V
Drain−Source Diode Characteristics
IS
VSD
VGS = 0 V, IS = 0 44 A (Note 2)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. 367°C/W When Mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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2
BSS138W
TYPICAL CHARACTERISTICS
RDS(on),
DRAIN−SOURCE ON−RESISTANCE (W)
VGS = 10 V
1.5
6V
4.5 V
3.5 V
1.0
3V
0.5
2.5 V
0.0
0.0
2V
0.5
1.0
1.5
2.0
2.5
3.0
3.0
2.5
4.5 V
1.5
1.0
6V
0.5
0.0
0.2
1.5
1.0
0.5
−50
0.6
100
50
0
150
4.0
0.8
ID = 110 mA
3.0
TA = 25°C
2.5
2.0
1.5
TA = 25°C
1.0
0.5
0.0
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125°C
1.2
TA = 25°C
0.4
TA = − 55(°C)
0.1
0.2
0.3
0.4
0.5
IS, REVERSE DRAIN CURRENT (mA)
VGS = 10 V
0.8
10
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Figure 3. On−Resistance Variation with
Temperature.
1.6
1.0
3.5
TJ, JUNCTION TEMPERATURE (5C)
VDS, DRAIN−SOURCE ON VOLTAGE (V)
0.4
10 V
Figure 2. On−Resistance Variation With
Drain Current and Gate Voltage
VGS = 10 V
ID = 220 mA
0.0
0.0
3.5 V
Figure 1. On−Region Characteristics
2.0
2.0
3V
VGS = 2 5 V
2.0
4V
ID, DRAIN−SOURCE CURRENT (A)
2.5
RDS(on), NORMALIZED DRAIN −
SOURCE ON−RESISTANCE (W)
3.5
VDS, DRAIN−SOURCE VOLTAGE (V)
RDS(on),
DRAIN−SOURCE ON−RESISTANCE (W)
ID, DRAIN−SOURCE CURRENT (A)
2.0
1000
VGS = 0 V
10
TA = 25°C
1
TA = − 55°C
0.1
0.0
0.6
TA = 150°C
100
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure 5. Drain−Source On Voltage with
Temperature.
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3
BSS138W
10
CISS, COSS, CRSS, CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS (continued)
ID = 220 mA
8
VDS = 8 V
6
VDS = 25 V
VDS = 30 V
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
100
f = 1 MHz
VGS = 0 V
80
60
CISS
40
COSS
20
0
CRSS
0.1
10
Qg, GATE CHARGE (nC)
ID, GATE LEAKAGE CURRENT (A)
101
100
RDS(ON)
100 ms
10 ms 1 ms
100 ms
1s
DC
VGS = 10 V
SINGLE PULSE
RTHJA = 367°C/W
TA = 25°C
10−2
10−3
10−1
r(t), Normalized TRANSIENT THERMAL RESISTANCE
LIMIT
100
101
102
5
2
1
0
1 E−3
30%
10%
5%
2%
D = 1%
10
0.1
1
Figure 10. Single Pulse Maximum
Power Dissipation
RTHJA (t) = r (t) *RTHJA
RTHJA = 367°C/W
01
1
t1, TIME (s)
0.01
t1, TIME (s)
1
SINGLE PULSE
0.01
1 E−4 1 E−3 0.01
50
3
Figure 9. Maximum Safe Operating Area
0.1
40
SINGLE PULSE
RTHJA = 367°C/W
TA = 25°C
4
VDS, DRAIN − SOURCE VOLTAGE (V)
50%
30
Figure 8. Capacitance Characteristics
P(pk), PEAK TRANSIENT POWER (W)
Figure 7. Gate Charge Characteristics
10−1
20
VDS, VOLTAGE BIAS (V)
100
1000
Figure 11. Transient Thermal Response Curve
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4
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70, 3 Lead, 1.25x2
CASE 419AB−01
ISSUE O
D
DATE 19 DEC 2008
SYMBOL
MIN
A
0.80
1.10
A1
0.00
0.10
A2
0.80
b
0.15
0.30
c
0.08
0.22
D
1.80
2.00
2.20
E
1.80
2.10
2.40
E1
1.15
1.25
1.35
E1 E
0.26
L
e
TOP VIEW
0.90
MAX
1.00
0.65 BSC
e
e
NOM
0.36
L1
0.42 REF
L2
0.15 BSC
0.46
θ
0º
8º
θ1
4º
10º
q1
A2 A
q
b
q1
L
L1
A1
SIDE VIEW
c
L2
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34256E
SC−70, 3 LEAD, 1.25X2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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