DATA SHEET
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N-Channel Logic Level
Enhancement Mode Field
Effect Transistor
D
G
BSS138
S
General Description
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
SOT−23−3
CASE 318−08
MARKING DIAGRAM
Features
• 0.22 A, 50 V
3
Drain
RDS(on) = 3.5 @ VGS = 10 V
RDS(on) = 6.0 @ VGS = 4.5 V
High Density Cell Design for Extremely Low RDS(on)
Rugged and Reliable
Compact Industry Standard SOT−23 Surface Mount Package
This Device is Pb−Free and Halogen Free
♦
•
•
•
•
♦
SSMG
G
1
Gate
SS
M
G
2
Source
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BSS138,
BSS138−G
Package
Shipping†
SOT−23−3
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
November, 2021 − Rev. 6
1
Publication Order Number:
BSS138/D
BSS138
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Parameter
Symbol
Ratings
Unit
50
V
VDSS
Drain−Source Voltage
VGSS
Gate−Source Voltage
±20
Drain Current – Continuous (Note 1)
0.22
Drain Current – Pulsed (Note 1)
0.88
Maximum Power Dissipation (Note 1)
0.36
W
Derate Above 25°C
2.8
mW/°C
−55 to +150
°C
ID
PD
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case
for 10 s
A
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted.
Parameter
Symbol
RJA
Thermal Resistance, Junction−to−Ambient (Note 1)
Ratings
Unit
350
°C/W
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 A
50
−
−
V
V GS(th)
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to
25°C
−
72
−
mV/°C
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
−
−
0.5
A
VDS = 50 V, VGS = 0 V,
TJ = 125°C
−
−
5
VDS = 30 V, VGS = 0 V
−
−
100
VGS = ±20 V, VDS = 0 V
−
−
±100
0.8
1.3
1.5
V
T J
IDSS
IGSS
Gate–Body Leakage
nA
ON CHARACTERISTICS
VGS(th)
V GS(th)
T J
RDS(on)
ID(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
Gate Threshold Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25°C
−
–2
−
mV/°C
Static Drain–Source On–Resistance
VGS = 10 V, ID = 0.22 A
−
0.7
3.5
VGS = 4.5 V, ID = 0.22 A
−
1.0
6.0
VGS = 10 V, ID = 0.22 A,
TJ = 125°C
−
1.1
5.8
On–State Drain Current
VGS = 10 V, VDS = 5 V
0.2
−
−
A
Forward Transconductance
VDS = 10 V, ID = 0.22 A
0.12
0.5
−
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
−
27
−
pF
−
13
−
pF
−
6
−
pF
−
9
−
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
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2
BSS138
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. (continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
−
2.5
5
ns
−
9
18
ns
SWITCHING CHARACTERISTICS
VDD = 30 V, ID = 0.29 A,
VGS = 10 V, RGEN = 6
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
−
20
36
ns
tf
Turn–Off Fall Time
−
7
14
ns
−
1.7
2.4
nC
−
0.1
−
nC
−
0.4
−
nC
Maximum Continuous Drain–Source Diode Forward Current
−
−
0.22
A
Drain–Source Diode Forward Voltage
−
0.8
1.4
V
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 25 V, ID = 0.22 A,
VGS = 10 V
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
VSD
VGS = 0 V, IS = 0.44 A (Note 2)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RJA is guaranteed by design while RJA is determined by the user’s board design.
a) 350°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
TYPICAL CHARACTERISTICS
VGS = 10 V
ID, Drain Current (A)
0.8
4.5 V
3.4
3.5 V
3.0 V
9V
0.6
2.5 V
0.4
0.2
0
2.0 V
0
0.5
1
1.5
2
2.5
RDS(on), Normalized
Drain−Source On−Resistance
1
3
3.0 V
2.2
3.5 V
4.0 V
1.8
4.5 V
1.4
6.0 V
10 V
1
0.6
3
VGS = 2.5 V
2.6
0
0.2
0.4
0.6
0.8
VDS, Drain To Source Voltage (V)
ID, Drain Current (A)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
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3
1
BSS138
TYPICAL CHARACTERISTICS (continued)
4.1
ID = 110 mA
ID = 220 mA
VGS = 10 V
1.8
RDS(on), On−Resistance (W)
RDS(on), Normalized
Drain−Source On−Resistance
2
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
3.5
2.9
2.3
1.1
0.5
150
TA = 125°C
1.7
TA = 25°C
2
0
TJ, Junction Temperature (5C)
0.6
1
25°C
TA = −55°C
125°C
0.4
0.3
0.2
0.1
0
0.5
1
1.5
2
2.5
3
3.5
TA = 125°C
0.1
25°C
0.01
−55°C
0.001
0.0001
0
0.2
0.4
0.6
1
0.8
1.2
VSD, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
10
100
ID = 220 mA
VDS = 8 V
8
25 V
80
Capacitance (pF)
VGS, Gate−Source Voltage (V)
10
VGS = 0 V
VGS, Gate To Source Voltage (V)
30 V
6
4
2
0
8
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
IS, Reverse Drain Current (A)
ID, Drain Current (A)
0.5
6
VGS, Gate To Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
VDS = 10 V
4
60
40
CISS
COSS
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
CRSS
0
10
20
30
40
VSD, Drain To Source Voltage (V)
Qg, Gate Charge (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
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4
50
BSS138
10
100 s
1
ID, Drain Current (A)
P(pk), Peak Transient Power (W)
5
RDS(on) Limit
1 ms
10 ms
0.1
100 ms
0.001
1s
DC
VGS = 10 V
Single Pulse
RJA = 350°C/W
TA = 25°C
0.01
0
1
10
100
Single Pulse
RJA = 350°C/W
TA = 25°C
4
3
2
1
0
0.001
0.01
0.1
VDS, Drain−Source Voltage (V)
1
10
100
1000
t1, Time (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
r(t), Normalized Effective Transient
Thermal Resistance
1
D = 0.5
0.2
0.1 0.1
RJA(t)= r(t) * RJA
RJA = 350°C/W
0.05
P(pk)
0.02
0.01 0.01
0.001
0.0001
t1
t2
TJ − TA = P * RJA(t)
Duty Cycle, D = t1 / t2
Single Pulse
0.001
0.01
0.1
1
10
t1, Time (s)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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5
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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