BSS84

Features Description   -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V   High-Density Cell Design for Low RDS(ON) This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch. Voltage-Controlled P-Channel Small-Signal Switch High Saturation Current D D S G G SOT-23 S Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VDSS VGSS ID PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Continuous Pulsed Drain Current(1) Maximum Power Dissipation(1) Derate Above 25°C Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds Ratings Unit −50 ±20 −0.13 −0.52 0.36 2.9 −55 to +150 V V A A W mW / °C °C 300 °C Thermal Characteristics RθJA 350 Thermal Resistance, Junction-to-Ambient(1) °C/W Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJA is guaranteed by design, while RθJA is determined by the user's board design. a) 350°C/W when mounted on a minimum pad Scale 1: 1 on letter-size paper. Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SP BSS84 7’’ 8mm 3000 © 2002 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: BSS84/D BSS84 — P-Channel Enhancement Mode Field-Effect Transistor BSS84 P-Channel Enhancement Mode Field-Effect Transistor Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain–Source Breakdown Voltage ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS BVDSS Gate–Body Leakage. Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 μA ID = –250 μA, Referenced to 25℃ VDS = –50 V, VGS = 0 V VDS = –50 V, VGS = 0 V, TJ = 125°C VGS = ±20 V, VDS = 0 V VGS = 0 V, ID = –250 μA –50 V mV / ℃ –48 –15 μA –60 μA ±10 nA V –2 V –50 On Characteristics(2) VGS(th) VGS(TH) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain–Source On–Resistance ID(on) gFS On–State Drain Current Forward Transconductance VDS = VGS, ID = –1 mA ID = –1 mA, –0.8 mV / ℃ 3 Referenced to 25℃ VGS = –5 V, ID = –0.10 A VGS = –5 V, ID = –0.10 A, TJ = 125°C VGS = –5 V, VDS = – 10 V VDS = –25 V, ID = – 0.10 A –1.7 –0.6 0.05 1.2 10.0 Ω 1.9 17.0 Ω 0.60 A S 73 10 pF pF 5 pF 9 Ω Dynamic Characteristics CISS COSS Input Capacitance Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance VDS = –25 V, VGS = 0 V, f = 1.0 MHz VGS = –15 mV, f = 1.0 MHz Switching Characteristics(2) td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Turn–On Rise Time Turn–Off Delay Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –30 V, ID = – 0.27 A, VGS = –10 V, RGEN = 6  VDS = –25 V, ID = –0.10 A, VGS = –5 V 2.5 6.3 10 4.8 0.9 0.2 0.3 5.0 13.0 20 9.6 1.3 ns ns ns ns nC nC nC -0.13 A -1.2 V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 0.26 A(2) -0.8 tRR Diode Reverse-Recovery Time 10 ns QRR Diode Reverse-Recovery Charge IF = -0.1 A, (2) diF / dt = 100 A / µs 3 nC Note: 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. www.onsemi.com 2 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Electrical Characteristics(2) 1 2 -4.5V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -5V 0.8 0.6 -3.0V 0.4 -2.5V 0.2 0 1.8 VGS=-3.0V 1.6 1.4 -3.5V 1.2 1 2 3 4 5 -5.0V 0 0.2 0.4 0.6 0.8 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 5 ID = -0.10A VGS = -5V ID = -0.05A RDS(ON), ON-RESISTANCE (OHM) 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 4 3 TA = 125oC 2 TA = 25oC 1 150 2 2.5 o TJ, JUNCTION TEMPERATURE ( C) 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-toSource Voltage 1 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 1 -ID, DRAIN CURRENT (A) -4.5V 1 0.8 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 25oC o TA = -55 C 0.8 125oC 0.6 0.4 0.2 VGS = 0V 0.1 TA = 125oC 25oC 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Typical Characteristics 100 VDS = -8V ID = -0.10A f = 1 MHz VGS = 0 V -25V 4 80 CAPACITANCE (pF) -30V 3 2 1 CISS 60 40 20 COSS CRSS 0 0 0 0.2 0.4 0.6 0.8 1 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics P(pk), PEAK TRANSIENT POWER (W) 5 SINGLE PULSE RθJA = 350캜 /W TA = 25캜 4 3 2 1 0 0.01 0.1 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single-Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) * RθJA o 0.2 0.1 RθJA = 350 C/W 0.1 P(pk) 0.05 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described on page 1. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Typical Characteristics (Continued) SOT-23 3L Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 5 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Physical Dimension ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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