DATA SHEET
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P-Channel Enhancement
Mode Field-Effect
Transistor
D
G
BSS84
S
General Description
This P−channel enhancement−mode field−effect transistor is
produced using onsemi’s proprietary, high cell density, DMOS
technology. This very high density process minimizes on−state
resistance and to provide rugged and reliable performance and fast
switching. The BSS84 can be used, with a minimum of effort, in most
applications requiring up to 0.13 A DC and can deliver current up to
0.52 A. This product is particularly suited to low−voltage applications
requiring a low−current high−side switch.
SOT−23−3
CASE 318−08
MARKING DIAGRAM
3
Drain
Features
•
•
•
•
•
SPMG
G
−0.13 A, −50 V, RDS(on) = 10 W at VGS = −5 V
Voltage−Controlled P−Channel Small−Signal Switch
High−Density Cell Design for Low RDS(on)
High Saturation Current
This Device is Pb−Free and Halogen Free
1
Gate
2
Source
SP
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BSS84,
BSS84−G
Package
Shipping†
SOT−23−3
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2002
October, 2021 − Rev. 5
1
Publication Order Number:
BSS84/D
BSS84
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Parameter
Symbol
VDSS
Drain−Source Voltage
VGSS
Gate−Source Voltage
ID
PD
TJ, TSTG
TL
Ratings
Unit
−50
V
±20
A
Drain Current – Continuous (Note 1)
−0.13
Drain Current – Pulsed (Note 1)
−0.52
Maximum Power Dissipation (Note 1)
0.36
W
Derate Above 25°C
2.9
mW/°C
−55 to +150
°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case
for 10 s
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted.
Parameter
Symbol
RqJA
Thermal Resistance, Junction−to−Ambient (Note 1)
Ratings
Unit
350
°C/W
ELECTRICAL CHARACTERISTICS (Note 2) TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
−50
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
DBV DSS
DT J
Breakdown Voltage Temperature
Coefficient
ID = −250 μA, Referenced to
25°C
−
−48
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = −50 V, VGS = 0 V
−
−
−15
mA
VDS = −50 V, VGS = 0 V,
TJ = 125°C
−
−
−60
VGS = ±20 V, VDS = 0 V
−
−
±10
nA
Gate Threshold Voltage
VDS = VGS, ID = −1 mA
−0.8
−1.7
−2
V
Gate Threshold Voltage Temperature
Coefficient
ID = −1 mA, Referenced to
25°C
−
3
−
mV/°C
Static Drain–Source On–Resistance
VGS = −5 V, ID = −0.10 A
−
1.2
10
W
VGS = −5 V, ID = −0.10 A,
TJ = 125°C
−
1.9
17
On–State Drain Current
VGS = −5 V, VDS = −10 V
−0.6
−
−
A
Forward Transconductance
VDS = −25 V, ID = −0.10 A
0.05
0.6
−
S
−
73
−
pF
−
10
−
−
5
−
−
9
−
IGSS
Gate–Body Leakage
ON CHARACTERISTICS (Note 2)
VGS(th)
DV GS(th)
DT J
RDS(on)
ID(on)
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = −25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
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2
W
BSS84
ELECTRICAL CHARACTERISTICS (Note 2) TA = 25°C unless otherwise noted. (continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
−
2.5
5.0
ns
−
6.3
13
SWITCHING CHARACTERISTICS (Note 2)
VDD = −30 V, ID = −0.27 A,
VGS = −10 V, RGEN = 6 W
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
−
10
20
tf
Turn–Off Fall Time
−
4.8
9.6
−
0.9
1.3
−
0.2
−
−
0.3
−
Maximum Continuous Drain–Source Diode Forward Current
−
−
−0.13
A
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = −0.26 A
(Note 2)
−
−0.8
−1.2
V
trr
Diode Reverse Recovery Time
−
10
−
ns
Qrr
Diode Reverse Recovery Charge
IF = −0.1 A, dif/dt = 100 A/ms
(Note 2)
−
3
−
nC
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = −25 V, ID = −0.10 A,
VGS = −5 V
nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
VSD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJA is guaranteed by design while RqJA is determined by the user’s board design.
a) 350°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
TYPICAL CHARACTERISTICS
1.0
ID, Drain Current (A)
0.8
−3.5 V
−3.0 V
0.6
0.4
−2.5 V
0.2
0
0
1
2
3
4
RDS(on), Normalized
Drain−Source On−Resistance
2.0
VGS = −5 V
−4.5 V
1.8
VGS = −3.0 V
1.4
−4.0 V
−4.5 V
1.2
−5.0 V
1.0
0.8
5
−3.5 V
1.6
0
0.2
0.4
0.6
0.8
VDS, Drain To Source Voltage (V)
ID, Drain Current (A)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
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3
1
BSS84
TYPICAL CHARACTERISTICS (continued)
5
ID = −0.10 mA
VGS = −5 V
1.6
RDS(on), On−Resistance (W)
RDS(on), Normalized
Drain−Source On−Resistance
1.8
1.4
1.2
1.0
0.8
0.6
0.4
−50
−25
0
25
50
75
100
125
ID = −0.05 A
4
3
TA = 125°C
2
TA = 25°C
1
150
2
2.5
Figure 3. On−Resistance Variation with Temperature
25°C
TA = −55°C
0.8
IS, Reverse Drain Current (A)
ID, Drain Current (A)
5
4.5
1
VDS = −5 V
125°C
0.6
0.4
0.2
1
1.5
2
2.5
3
3.5
4
VGS = 0 V
TA = 125°C
0.1
0.01
0.0001
−55°C
25°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
VGS, Gate To Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
5
100
ID = −0.10 A
f = 1 MHz
VGS = 0 V
VDS = −8 V
4
80
−25 V
−30 V
Capacitance (pF)
VGS, Gate−Source Voltage (V)
4
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
1.0
3
2
1
Ciss
60
40
20
Coss
Crss
0
3.5
VGS, Gate To Source Voltage (V)
TJ, Junction Temperature (5C)
0
3
0
0.2
0.4
0.6
0.8
0
1
0
Qg, Gate Charge (nC)
10
20
30
40
VSD, Drain To Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
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4
50
BSS84
TYPICAL CHARACTERISTICS (continued)
1
P(pk), Peak Transient Power (W)
ID, Drain Current (A)
5
100 ms
RDS(on) Limit
1 ms
10 ms
0.1
100 ms
0.01
0.001
1s
10 s
DC
VGS = 10 V
Single Pulse
RqJA = 350°C/W
TA = 25°C
1
4
3
2
1
0
100
10
Single Pulse
RqJA = 350°C/W
TA = 25°C
0.01
0.1
1
VDS, Drain−Source Voltage (V)
r(t), Normalized Effective Transient
Thermal Resistance
100
t1, Time (s)
Figure 9. Maximum Safe Operating Area
1
10
Figure 10. Single Pulse Maximum Power Dissipation
D = 0.5
0.2
0.1
0.1
RqJA(t)= r(t) * RqJA
RqJA = 350°C/W
0.05
0.02
0.01
P(pk)
0.01
t2
TJ − TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
Single Pulse
0.001
0.0001
0.001
t1
0.01
0.1
t1, Time (s)
1
10
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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5
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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