BSV52LT1D

BSV52LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Collector Current − Continuous Symbol VCEO VCBO IC Value 12 20 100 Unit Vdc Vdc mAdc 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 3 RqJA PD RqJA TJ, Tstg MARKING DIAGRAM B2 M G G 1 B2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device BSV52LT1G Package SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 Publication Order Number: BSV52LT1/D BSV52LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) (VCB = 10 Vdc, IE = 0, TA = 125°C) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 300 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Storage Time (IC = IB1 = IB2 = 10 mAdc) Turn−On Time (VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc) Turn−Off Time (IC = 10 mAdc, IB = 3.0 mAdc) ts ton toff ns − − − 13 ns 12 ns 18 fT Cobo Cibo MHz 400 − − − pF 4.0 pF 4.5 HFE − 25 40 25 − − − 700 − − 120 − mVdc 300 250 400 mVdc 850 1200 V(BR)CEO ICBO Vdc 12 − − − 100 5.0 nAdc mAdc Symbol Min Max Unit VCE(sat) VBE(sat) http://onsemi.com 2 BSV52LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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