BUD42D

BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Features http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR • • • • • • • Free−Wheeling Diode Built−In Flat DC Current Gain Fast Switching Times and Tight Distribution “6 Sigma” Process Providing Tight and Reproducible Parameter Spreads Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model, C; >400 V Human Body Model, 3B; >8000 V These are Pb−Free Packages 12 3 MARKING DIAGRAMS 4 Collector AYWW BU D42DG 2 1 Collector 3 Base Emmitter 4 Collector AYWW BU D42DG 2 1 2 3 Base Collector Emmitter A Y WW BUD43D G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package 4 Publication Order Number: BUD42D/D 4 Two Versions • BUD42D−1: Case 369D for Insertion Mode • BUD42D, BUD42DT4: Case 369C for Surface Mount Mode MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Temperature Symbol VCEO VCBO VCES VEBO ICM IB IBM PD TJ, Tstg IC Value 350 650 650 9 4.0 8.0 1.0 2.0 25 0.2 − 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/_C _C DPAK CASE 369C STYLE 1 1 3 DPAK CASE 369D STYLE 1 TYPICAL GAIN Typical Gain @ IC = 1 A, VCE = 2 V Typical Gain @ IC = 0.3 A, VCE = 1 V hFE hFE 13 16 − − Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%10 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2011 1 January, 2011 − Rev. 5 ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎ Î Î Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) THERMAL CHARACTERISTICS DYNAMIC SATURATION VOLTAGE SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 ms) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 seconds Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Fall Time (IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = −2 V) Turn−Off Time (IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V) Forward Diode Voltage (IEC = 1.0 Adc) DC Current Gain (IC = 1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 0.5 Adc) Base−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter−Base Breakdown Voltage (IEBO = 1 mA) Collector−Base Breakdown Voltage (ICBO = 1 mA) Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Characteristic Characteristic IC = 1 A IB1 = 200 mA VCC = 300 V IC = 400 mA IB1 = 40 mA VCC = 300 V @ 3 ms @ 1 ms @ 3 ms @ 1 ms @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C VCEO(sus) VCE(dsat) Symbol Symbol VCE(sat) VBE(sat) VCBO VEBO RqJC RqJA ICEO IEBO ICES VEC hFE Toff TL Tf Min 650 350 4.6 8.0 10 9.0 − − − − − − − − − − − − − − − − − Value 0.35 0.6 0.75 1.3 0.85 71.4 Typ 780 430 260 2.1 4.7 2.8 3.2 0.9 0.2 5.0 13 12 12 − − − − − − − 6.55 Max 10 200 100 100 200 0.8 1.5 1.0 1.2 − − − − − − − − − − − − − °C/W °C/W mAdc mAdc mAdc Unit Unit Vdc Vdc Vdc Vdc Vdc °C ms ms V V − http://onsemi.com BUD42D 2 BUD42D TYPICAL STATIC CHARACTERISTICS 100 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C TJ = 25°C 10 TJ = - 20°C TJ = 125°C TJ = 25°C 10 TJ = - 20°C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ VCE = 1 V Figure 2. DC Current Gain @ VCE = 5 V 3 TJ = 25°C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 IC/IB = 5 2A 2 1.5 A 1A 1 0.4 A 1 TJ = 125°C 0.1 TJ = - 20°C TJ = 25°C IC = 0.2 A 0 0.001 0.01 0.1 1 IB, BASE CURRENT (AMPS) 10 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage 100 IC/IB = 8 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 TJ = 125°C 1 TJ = - 20°C 10 IC/IB = 10 TJ = - 20°C TJ = 125°C TJ = 25°C 1 TJ = 25°C 0.1 0.1 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 3 BUD42D TYPICAL STATIC CHARACTERISTICS 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 8 1 TJ = - 20°C 1 TJ = - 20°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base−Emitter Saturation Region Figure 8. Base−Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 10 VBE , VOLTAGE (VOLTS) 10 1 TJ = - 20°C 1 VEC(V) = - 20°C VEC(V) = 125°C VEC(V) = 25°C TJ = 125°C TJ = 25°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 0.1 1 REVERSE EMITTER-COLLECTOR CURRENT 10 Figure 9. Base−Emitter Saturation Region Figure 10. Forward Diode Voltage http://onsemi.com 4 BUD42D TYPICAL SWITCHING CHARACTERISTICS 1000 Cib C, CAPACITANCE (pF) TJ = 25°C f(test) = 1 MHz BVCER (VOLTS) 900 800 700 600 500 400 TC = 25°C 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 300 10 100 RBE (W) 1000 10000 ICER = 100 mA lC = 25 mH ICER = 10 mA 100 Cob 10 Figure 11. Capacitance Figure 12. BVCER = f(RBE) 800 700 600 t, TIME (ns) 500 400 300 200 100 0 0 1 0.5 1.5 IC, COLLECTOR CURRENT (AMPS) 2 TJ = 125°C TJ = 25°C hFE = 5 hFE = 10 IBon = IBoff VCC = 300 V PW = 40 ms 9 IBon = IBoff VCC = 300 V PW = 40 ms 6 t, TIME (ns) hFE = 5 3 TJ = 125°C TJ = 25°C 0 0 hFE = 10 2 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switching, ton Figure 14. Resistive Switching, toff 4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 mH TJ = 125°C 4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 mH 3 t, TIME ( μ s) TJ = 125°C 3 TJ = 25°C t, TIME ( μ s) TJ = 25°C 2 2 1 0 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 Figure 15. Inductive Storage Time, tsi @ hFE = 5 http://onsemi.com 5 Figure 16. Inductive Storage Time, tsi @ hFE = 10 BUD42D TYPICAL SWITCHING CHARACTERISTICS 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 300 t, TIME (ns) tc 200 tfi t, TIME (ns) TJ = 125°C TJ = 25°C 200 TJ = 125°C 250 TJ = 25°C 150 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 mH 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 100 100 0 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 Figure 17. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5 500 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C 4 t, TIME ( m s) 5 Figure 18. Inductive Fall Time, tfi @ hFE = 10 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH IC = 1 A TJ = 125°C TJ = 25°C 400 t, TIME (ns) 3 300 TJ = 25°C 2 IC = 0.3 A 200 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 3 4 5 6 7 8 9 hFE, FORCED GAIN 10 11 12 Figure 19. Inductive Cross Over Time, tc @ hFE = 10 Figure 20. Inductive Storage Time, tsi 300 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 300 CROSS-OVER TIME (ns) IC = 0.3 A IC = 0.3 A IC = 1 A 200 t fi , FALL TIME (ns) 200 IC = 1 A TJ = 125°C TJ = 25°C 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 100 2 4 TJ = 125°C TJ = 25°C 6 hFE, FORCED GAIN 8 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 10 Figure 21. Inductive Fall Time, tf http://onsemi.com 6 Figure 22. Inductive Cross Over Time, tc BUD42D TYPICAL SWITCHING CHARACTERISTICS 3 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH IB 1 & 2 = 200 mA t fr , FORWARD RECOVERY TIME (ns) 440 420 400 380 360 340 320 300 0 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 0 1 0.5 1.5 IF, FORWARD CURRENT (AMPS) 2 di/dt = 10 A/ms, TC = 25°C 2.5 t, TIME ( m s) 500 mA 2 50 mA 100 mA 1.5 1 Figure 23. Inductive Storage Time, tsi Figure 24. Forward Recovery Time, tfr 10 VCE Dyn 1 ms Dyn 3 ms 6 0V Vclamp 90% IB IB 1 ms 3 ms 2 0 0 TIME 2 4 TIME 6 8 4 IB 90% IB1 tc 10% Vclamp 8 IC 90% IC tsi tfi 10% IC Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements http://onsemi.com 7 BUD42D TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W MTP8P10 100 mF VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 W 500 mF 150 W 3W RB2 MTP12N10 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 Iout IB RB1 VCE IB1 IC PEAK MJE210 COMMON 1 mF -Voff VFRM VF VFR (1.1 VF) UNLESS OTHERWISE SPECIFIED 0.1 VF tfr IF 10% IF Figure 27. tfr Measurement http://onsemi.com 8 BUD42D MAXIMUM RATINGS 10 IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 5 ms dc 1 EXTENDED SOA 1 ms 10 ms 1 ms 4 5 TJ = 125°C GAIN ≥ 4 LC = 500 mH 3 2 VBE(off) = -5 V VBE = 0 V 300 VBE(off) = -1.5 V 700 0.1 1 0 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 28. Forward Bias Safe Operating Area Figure 29. Reverse Bias Safe Operating Area 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 0.4 0.2 THERMAL DERATING 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 30. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; Tj(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second Breakdown limitations do not derate like thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. Tj(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. http://onsemi.com 9 BUD42D 1 D = 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 0.01 t1 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 t2 DUTY CYCLE, D = t1/t2 P(pk) RqJC(t) = r(t) RqJC RqJC = 5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) Figure 31. Thermal Response ORDERING INFORMATION Device BUD42D−1G Package DPAK Straight Lead (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail BUD42DT4G 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 10 BUD42D PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A B C A c2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− E b3 L3 1 4 D 2 3 Z DETAIL A H L4 b2 e b 0.005 (0.13) M c C L2 GAUGE PLANE H C L L1 DETAIL A SEATING PLANE A1 ROTATED 90 CW 5 SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 BUD42D PACKAGE DIMENSIONS DPAK STRAIGHT LEAD CASE 369D−01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− S −T− SEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. 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