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Is Now
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BUH100G
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH100G has an application specific state−of−art die designed
for use in 100 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
Features
• Improved Efficiency Due to the Low Base Drive Requirements:
•
•
•
High and Flat DC Current Gain hFE
Fast Switching
Robustness Due to the Technology Developed to Manufacture
this Device
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
These Devices are Pb−Free and are RoHS Compliant*
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POWER TRANSISTORS
10 AMPERES
700 VOLTS − 100 WATTS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
400
Vdc
Collector−Base Breakdown Voltage
VCBO
700
Vdc
Collector−Emitter Breakdown Voltage
VCES
700
Vdc
Emitter−Base Voltage
VEBO
10
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
10
20
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
4
10
Adc
PD
100
0.8
W
W/_C
TJ, Tstg
−60 to 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
TL
260
_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Temperature
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
BUH100G
THERMAL CHARACTERISTICS
Characteristics
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1
AY WW
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUH100G
TO−220AB
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUH100/D
BUH100G
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
400
460
Vdc
Collector−Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
700
860
Vdc
Emitter−Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
10
12.5
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
mAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
1000
mAdc
Collector Base Current
(VCB = Rated VCBO, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICBO
100
1000
mAdc
IEBO
100
mAdc
Emitter−Cutoff Current
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C
VBE(sat)
1
1.1
Vdc
Collector−Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.37
0.37
0.6
0.6
Vdc
(IC = 7 Adc, IB = 1.5 Adc)
@ TC = 25°C
@ TC = 125°C
0.5
0.6
0.75
1.5
Vdc
DC Current Gain(IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
(IC = 5 Adc, VCE = 5 Vdc)
hFE
15
16
24
28
@ TC = 25°C
@ TC = 125°C
10
10
15
14.5
(IC = 7 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
8
7
12
10.5
(IC = 10 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
6
4
9.5
8
DYNAMIC SATURATION VOLTAGE
V
@ TC = 125°C
2.1
V
@ TC = 25°C
1.7
V
@ TC = 125°C
5
V
fT
23
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
100
150
pF
Input Capacitance
(VEB = 8 Vdc, f = 1 MHz)
Cib
1300
1750
pF
IC = 5 Adc, IB1 = 1 Adc
VCC = 300 V
IC = 7.5 Adc, IB1 = 1.5 Adc
VCC = 300 V
@ TC = 25°C
VCE(dsat)
1.1
Dynamic Saturation
Voltage: Determined 3 ms
after rising IB1 reaches
90% of final IB1
(See Figure 19)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
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2
BUH100G
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
IC = 1 Adc, IB1 = 0.2 Adc
IB2 = 0.2 Adc
VCC = 300 Vdc
IC = 1 Adc, IB1 = 0.2 Adc
IB2 = 0.4 Adc
VCC = 300 Vdc
IC = 5 Adc, IB1 = 1 Adc
IB2 = 1 Adc
VCC = 300 Vdc
IC = 7.5 Adc, IB1 = 1.5 Adc
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
ton
130
140
200
ns
@ TC = 25°C
@ TC = 125°C
toff
6.8
8.5
8
ms
@ TC = 25°C
@ TC = 125°C
ton
140
150
200
ns
@ TC = 25°C
@ TC = 125°C
toff
3.4
4.3
4
ms
@ TC = 25°C
@ TC = 125°C
ton
250
800
500
ns
@ TC = 25°C
@ TC = 125°C
toff
2.9
3.6
3.5
ms
@ TC = 25°C
@ TC = 125°C
ton
500
900
700
ns
@ TC = 25°C
@ TC = 125°C
toff
2.1
2.5
2.5
ms
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
@ TC = 25°C
@ TC = 125°C
tfi
150
180
250
ns
@ TC = 25°C
@ TC = 125°C
tsi
5.1
5.8
6
ms
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
230
300
325
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tfi
150
170
250
ns
@ TC = 25°C
@ TC = 125°C
tsi
2.5
2.8
3
ms
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
260
300
350
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tfi
100
140
150
ns
@ TC = 25°C
@ TC = 125°C
tsi
2.9
4.6
3.5
ms
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
220
450
300
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tfi
100
150
150
ns
@ TC = 25°C
@ TC = 125°C
tsi
2
2.5
2.5
ms
@ TC = 25°C
@ TC = 125°C
tc
250
475
350
ns
Storage Time
Storage Time
Storage Time
Storage Time
Crossover Time
IC = 1 Adc
IB1 = 0.2 Adc
IB2 = 0.2 Adc
IC = 1 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
IC = 5 Adc
IB1 = 1 Adc
IB2 = 1 Adc
IC = 7.5 Adc
IB1 = 1.5 Adc
IB2 = 1.5 Adc
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3
BUH100G
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 3 V
TJ = 125°C
TJ = -20°C
10
1
0.001
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 1 V
TJ = 25°C
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
TJ = -20°C
10
1
0.001
10
Figure 1. DC Current Gain @ 1 Volt
10
10
IC/IB = 5
VCE = 5 V
TJ = 125°C
TJ = -20°C
10
1
0.01
VCE , VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 3 Volt
100
TJ = 25°C
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
1
TJ = 25°C
0.1
TJ = -20°C
TJ = 125°C
0.01
0.001
100
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 4. Collector−Emitter Saturation Voltage
Figure 3. DC Current Gain @ 5 Volt
1.5
10
IC/IB = 10
IC/IB = 5
VBE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
TJ = 25°C
1
TJ = 25°C
0.1
TJ = -20°C
TJ = 125°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
TJ = -20°C
0.5
TJ = 125°C
0
0.001
10
TJ = 25°C
Figure 5. Collector−Emitter Saturation Voltage
0.1
0.01
1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Base−Emitter Saturation Region
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4
10
BUH100G
TYPICAL STATIC CHARACTERISTICS
2
1.5
TJ = 25°C
VCE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
IC/IB = 10
1
TJ = -20°C
TJ = 25°C
0.5
TJ = 125°C
15 A
10 A
1.5
8A
5A
1
3A
2A
0.5
VCE(sat)
(IC = 1 A)
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0
0.01
10
10
Figure 8. Collector Saturation Region
Figure 7. Base−Emitter Saturation Region
10000
900
TJ = 25°C
TJ = 25°C
f(test) = 1 MHz
Cib
1000
100
BVCER @ 10 mA
800
BVCER (VOLTS)
C, CAPACITANCE (pF)
0.1
1
IB, BASE CURRENT (A)
700
600
Cob
500
BVCER(sus) @ 500 mA, 25 mH
400
10
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
10
Figure 9. Capacitance
100
1000
RBE (W)
10000
Figure 10. Resistive Breakdown
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100000
BUH100G
TYPICAL SWITCHING CHARACTERISTICS
2500
10
IB1 = IB2
VCC = 300 V
PW = 40 ms
8
IC/IB = 10
TJ = 125°C
TJ = 25°C
1500
t, TIME (s)
μ
t, TIME (ns)
2000
TJ = 125°C
TJ = 25°C
1000
6
IB1 = IB2
VCC = 300 V
PW = 20 ms
IC/IB = 5
4
125°C
500
2
IC/IB = 10
IC/IB = 5
25°C
0
0
0
6
8
4
IC, COLLECTOR CURRENT (AMPS)
2
10
0
Figure 11. Resistive Switching Time, ton
6
4
8
IC, COLLECTOR CURRENT (AMPS)
10
Figure 12. Resistive Switch Time, toff
7
6
5
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC/IB = 10
5
t, TIME (s)
μ
IC/IB = 5
t, TIME (s)
μ
2
4
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
3
2
3
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
1
1
0
1
4
7
IC, COLLECTOR CURRENT (AMPS)
10
1
Figure 13. Inductive Storage Time, tsi
4
7
IC, COLLECTOR CURRENT (AMPS)
10
Figure 13 Bis. Inductive Storage Time, tsi
600
800
TJ = 125°C
TJ = 25°C
600
tc
t, TIME (ns)
400
TJ = 125°C
TJ = 25°C
tc
t, TIME (ns)
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
tfi
200
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
400
tfi
200
0
0
1
7
4
IC, COLLECTOR CURRENT (AMPS)
10
1
Figure 14. Inductive Storage Time,
tc & tfi @ IC/IB = 5
4
7
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
tc & tfi @ IC/IB = 10
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10
BUH100G
TYPICAL SWITCHING CHARACTERISTICS
4
200
3
150
IC = 5 A
t fi , FALL TIME (ns)
tsi , STORAGE TIME (μs)
IC = 7.5 A
2
IC = 7.5 A
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
1
TJ = 125°C
TJ = 25°C
0
2
4
6
hFE, FORCED GAIN
100
IBoff = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
50
TJ = 125°C
TJ = 25°C
0
10
8
IC = 5 A
4
3
6
7
hFE, FORCED GAIN
5
8
9
10
Figure 17. Inductive Fall Time
Figure 16. Inductive Storage Time
800
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 mH
t c , CROSSOVER TIME (ns)
700
600
IC = 7.5 A
500
400
300
200
IC = 5 A
TJ = 125°C
TJ = 25°C
100
3
4
5
6
7
hFE, FORCED GAIN
8
9
10
Figure 18. Inductive Crossover Time, tc
10
VCE
IC
9
90% IC
8
dyn 1 ms
dyn 3 ms
tfi
tsi
7
6
10% IC
10% Vclamp
Vclamp
5
0V
tc
4
IB
90% IB
3
1 ms
2
90% IB1
IB
1
3 ms
0
0
TIME
Figure 19. Dynamic Saturation Voltage Measurements
1
2
3
4
TIME
5
6
7
Figure 20. Inductive Switching Measurements
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7
8
BUH100G
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
COMMON
50
W
MJE210
500 mF
IB2
RB2
MTP12N10
150 W
3W
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 V
RB1 selected for
desired IB1
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 V
IC(pk) = 100 mA
1 mF
-Voff
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 V
RB1 selected for
desired IB1
TYPICAL THERMAL RESPONSE
POWER DERATING FACTOR
1
TJ(pk) may be calculated from the data in Figure 24. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 23). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL DERATING
0.4
0.2
100
40
80
120
60
100
TC, CASE TEMPERATURE (°C)
140
160
IC, COLLECTOR CURRENT (AMPS)
0
20
Figure 21. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 22 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using the
appropriate curve on Figure 21.
1 ms
10
10 ms
1 ms
5 ms
1
DC
EXTENDED
SOA
0.1
0.01
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
Figure 22. Forward Bias Safe Operating Area
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8
BUH100G
IC, COLLECTOR CURRENT (AMPS)
12
GAIN ≥ 5
TC ≤ 125°C
LC = 2 mH
10
8
6
4
-5 V
2
0V
-1.5 V
0
200
800
300
400
500
600
700
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 23. Reverse Bias Safe Operating Area
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
RqJC(t) = r(t) RqJC
RqJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
10
t, TIME (ms)
Figure 24. Typical Thermal Response (ZqJC(t)) for BUH100
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9
100
1000
BUH100G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BUH100/D
