BUL146

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL146/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146/BUL146F have an applications specific state–of–the–art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types of electronic equipment. These high voltage/high speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Full Characterization at 125°C • Parametric Distributions are Tight and Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL146F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Operating and Storage Temperature Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL BUL146 BUL146F 400 700 9.0 6.0 15 4.0 8.0 — — — 100 0.8 4500 3500 1500 40 0.32 Unit Vdc Vdc Vdc Adc Adc V BUL146* BUL146F* *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS BUL146 CASE 221A–06 TO–220AB PD TJ, Tstg Watts W/°C °C – 65 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Symbol RθJC RθJA TL BUL44 1.25 62.5 260 BUL44F 3.125 62.5 Unit °C/W °C BUL146F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Symbol Min Typ Max Unit VCEO(sus) ICEO ICES 400 — — — — — — — — — — — — 100 100 500 100 100 Vdc µAdc µAdc IEBO µAdc (continued) REV 1 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BUL146 BUL146F ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) Collector–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (TC = 125°C) Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (TC = 125°C) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation Voltage: Determined 1.0 µs and 3.0 µs respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc IB1 = 300 mAdc VCC = 300 V) (IC = 3.0 Adc IB1 = 0.6 Adc VCC = 300 V) 1.0 µs 3.0 µs 1.0 µs 3.0 µs (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) ton toff ton toff fT COB CIB — — — — — — — — — — — 14 95 1000 2.5 6.5 0.6 2.5 3.0 7.0 0.75 1.4 — 150 1500 — — — — — — — — MHz pF pF (TC = 125°C) (TC = 125°C) (TC = 125°C) VBE(sat) VCE(sat) — — — — — — 14 — 12 12 8.0 7.0 10 0.82 0.93 0.22 0.20 0.30 0.30 — 30 20 20 13 12 20 1.1 1.25 0.5 0.5 0.7 0.7 34 — — — — — — Vdc Vdc Symbol Min Typ Max Unit hFE — VCE(dsat) V SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time Turn–Off Time (TC = 125°C) Turn–On Time Turn–Off Time (TC = 125°C) Fall Time Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time Storage Time (TC = 125°C) Crossover Time (TC = 125°C) (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc) (TC = 125°C) (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc) (TC = 125°C) (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc) (IC = 3.0 Adc, IB1 = 0.6 Adc IB1 = 1.5 Adc, VCC = 300 V) (TC = 125°C) (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) (TC = 125°C) — — — — — — — — 100 90 1.35 1.90 90 100 1.7 2.1 200 — 2.5 — 150 — 2.5 — ns µs ns µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) (TC = 125°C) tfi tsi tc tfi tsi tc tfi tsi tc — — — — — — — — — — — — 80 — 2.6 — — — 115 120 1.35 1.75 200 210 85 100 1.75 2.25 175 200 — 210 — 4.5 230 400 200 — 2.5 — 350 — 150 — 2.5 — 300 — 180 — 3.8 — 350 — ns µs ns ns µs ns ns µs ns 2 Motorola Bipolar Power Transistor Device Data BUL146 BUL146F TYPICAL STATIC CHARACTERISTICS 100 TJ = 125°C h FE , DC CURRENT GAIN TJ = 25°C TJ = – 20°C VCE = 1 V h FE , DC CURRENT GAIN 100 TJ = 125°C TJ = 25°C TJ = – 20°C VCE = 5 V 10 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 TJ = 25°C 10 V CE , VOLTAGE (V) V CE , VOLTAGE (V) 1 1 IC = 1 A 2A 3A 5A 6A 0.1 IC/IB = 10 TJ = 25°C TJ = 125°C 0.1 1 10 IC/IB = 5 0 0.01 0.1 1 10 0.01 0.01 IB, BASE CURRENT (mA) IC COLLECTOR CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage 1.2 1.1 1 V BE , VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 TJ = 125°C 0.1 1 IC/IB = 5 IC/IB = 10 10 TJ = 25°C 10000 Cib 1000 C, CAPACITANCE (pF) TJ = 25°C f = 1 MHz 100 Cob 10 0.4 0.01 1 1 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3 BUL146 BUL146F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1000 IC/IB = 5 IC/IB = 10 IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 125°C 4000 3500 3000 t, TIME (ns) 2500 2000 1500 1000 TJ = 25°C 0 2 4 6 8 500 0 0 2 4 6 8 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 IC/IB = 5 TJ = 25°C TJ = 125°C IB(off) = IC/2 VCC = 300 V PW = 20 µs 800 t, TIME (ns) 600 400 200 0 Figure 7. Resistive Switching, ton 2500 IC/IB = 5 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 4000 3500 t si , STORAGE TIME (ns) 3000 2500 2000 1500 1000 500 7 8 0 3 Figure 8. Resistive Switching, toff 2000 TJ = 25°C TJ = 125°C IC = 3 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH t, TIME (ns) 1500 1000 500 TJ = 25°C TJ = 125°C 0 1 IC/IB = 10 IC = 1.3 A 4 5 hFE, FORCED GAIN 6 7 0 3 4 6 2 5 IC COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 250 tc 200 250 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 200 t, TIME (ns) 150 t, TIME (ns) tfi tc 150 tfi 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) 50 0 100 TJ = 25°C TJ = 125°C 7 8 TJ = 25°C TJ = 125°C 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) 50 Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data BUL146 BUL146F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 130 120 Tfi , FALL TIME (ns) 110 100 90 80 70 60 3 4 5 TJ = 25°C TJ = 125°C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 3 A IC = 1.3 A TC , CROSS–OVER TIME (ns) 200 250 IC = 1.3 A 150 IC = 3 A TJ = 25°C TJ = 125°C 3 4 5 6 7 8 100 50 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 9 10 11 12 13 14 15 hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Cross–Over Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (BUL146) I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 10 5 ms 1 ms 10 µs 1 µs 6 5 4 3 VBE(off) 2 –5V 1 0V 0.01 10 0 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 0 –1, 5 V 800 600 400 200 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 7 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 1 DC (BUL146F) 0.1 EXTENDED SOA Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T C = 25°C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1,0 POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0,8 0,6 0,4 THERMAL DERATING 0,2 0,0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 5 BUL146 BUL146F 5 4 3 2 1 VOLTS 0 –1 –2 –3 –4 –5 0 IB 1 2 90% IB 1 µs 3 µs 3 4 TIME 5 6 7 8 VCE dyn 1 µs dyn 3 µs 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 10% IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements +15 V 1 µF 100 Ω 3W MTP8P10 100 µF VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 Ω MJE210 COMMON 500 µF 150 Ω 3W MTP12N10 IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Iout IB RB1 VCE IB1 IC PEAK 150 Ω 3W 1 µF –Voff Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data BUL146 BUL146F TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 t1 P(pk) t2 DUTY CYCLE, D = t1/t2 1 t, TIME (ms) 10 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.1 100 1000 Figure 20. Typical Thermal Response (ZθJC(t)) for BUL146 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 SINGLE PULSE 0.1 1 10 t, TIME (ms) 100 1000 10000 100000 t1 P(pk) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) Figure 21. Typical Thermal Response (ZθJC(t)) for BUL146F Motorola Bipolar Power Transistor Device Data 7 BUL146 BUL146F TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP CLIP 0.107″ MIN 0.107″ MIN HEATSINK 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 HEATSINK HEATSINK Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data BUL146 BUL146F PACKAGE DIMENSIONS –T– B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR BUL44 CASE 221A–06 TO–220AB ISSUE Y –T– F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 –B– C S U H K –Y– STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER G N L D 3 PL M J R 0.25 (0.010) B M Y BUL44F CASE 221D–02 (ISOLATED TO–220 TYPE) ISSUE D Motorola Bipolar Power Transistor Device Data 9 BUL146 BUL146F Motorola reserves the right to make changes without further notice to any products herein. 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