BUL147F

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL147/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147/BUL147F have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These high–voltage/high–speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Parametric Distributions are Tight and Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL BUL147 BUL147F 400 700 9.0 8.0 16 4.0 8.0 — — — 125 1.0 4500 3500 1500 45 0.36 Unit Vdc Vdc Vdc Adc Adc Volts BUL147* BUL147F* *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS BUL147 CASE 221A–06 TO–220AB PD TJ, Tstg Watts W/°C °C Operating and Storage Temperature – 65 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Symbol RθJC RθJA TL BUL44 1.0 62.5 260 BUL44F 2.78 62.5 Unit °C/W °C BUL147F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Symbol Min Typ Max Unit VCEO(sus) ICEO ICES 400 — — — — — — — — — — — — 100 100 500 100 100 Vdc µAdc µAdc IEBO µAdc (continued) REV 1 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3–1 BUL147 BUL147F ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) (IC = 4.5 Adc, IB = 0.9 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) VBE(sat) VCE(sat) (TC = 125°C) (TC = 125°C) (TC = 125°C) hFE — — — — 14 — 8.0 7.0 10 10 0.25 0.3 0.35 0.35 — 30 12 11 18 20 0.5 0.5 0.7 0.8 34 — — — — — — — — 0.82 0.92 1.1 1.25 Vdc Vdc Symbol Min Typ Max Unit (TC = 125°C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) fT Cob Cib 1.0 µs 3.0 µs 1.0 µs 3.0 µs (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) ton toff ton toff DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 0.9 Adc VCC = 300 V) — — — — — — — — — — — 14 100 1750 3.0 5.5 0.8 1.4 3.3 8.5 0.4 1.0 — 175 2500 — — — — — — — — MHz pF pF Dynamic Saturation Voltage: Determined 1.0 µs and 3.0 µs respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) VCE(dsat) Volts SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time Turn–Off Time (TC = 125°C) Turn–On Time Turn–Off Time (TC = 125°C) Fall Time Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time Storage Time (TC = 125°C) Crossover Time (TC = 125°C) (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 0.9 Adc) (TC = 125°C) (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 2.25 Adc) (TC = 125°C) (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc) (IC = 4.5 Adc, IB1 = 0.9 Adc IB1 = 2.25 Adc, VCC = 300 V) (TC = 125°C) (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc, VCC = 300 V) (TC = 125°C) — — — — — — — — 200 190 1.0 1.6 85 100 1.5 2.0 350 — 2.5 — 150 — 2.5 — ns µs ns µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) (TC = 125°C) tfi tsi tc tfi tsi tc tfi tsi tc — — — — — — — — — — — — 60 — 2.6 — — — 100 120 1.3 1.9 210 230 80 100 1.6 2.1 170 200 — 150 — 4.3 200 330 180 — 2.5 — 350 — 150 — 3.2 — 300 — 180 — 3.8 — 350 — ns µs ns ns µs ns ns µs ns 3–2 Motorola Bipolar Power Transistor Device Data BUL147 BUL147F TYPICAL STATIC CHARACTERISTICS 100 TJ = 125°C h FE , DC CURRENT GAIN TJ = 25°C 10 TJ = – 20°C VCE = 1 V h FE , DC CURRENT GAIN 100 TJ = 125°C TJ = 25°C 10 TJ = – 20°C VCE = 5 V 1 0.01 0.1 1 10 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 TJ = 25°C V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) 1.5 IC = 1 A 3A 5A 8A 10 A 10 1 1 0.1 IC/IB = 10 IC/IB = 5 0.5 0 0.01 0.1 1 IB, BASE CURRENT (AMPS) 10 0.01 0.01 TJ = 25°C TJ = 125°C 0.1 1 IC COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage 1.3 1.2 V BE , VOLTAGE (VOLTS) 1.1 10000 Cib 1000 C, CAPACITANCE (pF) Cob 100 TJ = 25°C f = 1 MHz 1 0.9 0.8 0.7 0.6 0.5 TJ = 125°C 0.4 0.01 0.1 1 IC/IB = 5 IC/IB = 10 10 TJ = 25°C 10 1 1 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 IC, COLLECTOR CURRENT (AMPS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3–3 BUL147 BUL147F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 600 500 400 t, TIME (ns) 300 200 100 0 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 125°C TJ = 25°C IC/IB = 5 IC/IB = 10 4000 3500 3000 I /I = 5 CB t, TIME (ns) 2500 2000 1500 1000 500 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 TJ = 25°C TJ = 125°C IB(off) = IC/2 VCC = 300 V PW = 20 µs Figure 7. Resistive Switching, ton 3500 3000 2500 t, TIME (ns) 2000 1500 1000 500 0 1 2 TJ = 25°C TJ = 125°C IC/IB = 5 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 4000 3500 t si , STORAGE TIME (ns) 3000 2500 2000 1500 1000 500 7 8 0 Figure 8. Resistive Switching, toff TJ = 25°C TJ = 125°C IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 2 A IC/IB = 10 IC = 4.5 A 3 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 3 4 6 5 IC COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 300 250 200 t, TIME (ns) t, TIME (ns) tfi 150 100 50 0 1 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 2 3 4 5 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C TJ = 125°C 6 7 tc 250 TJ = 25°C TJ = 125°C tc 150 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 200 100 50 tfi 1 2 3 4 5 6 7 8 0 IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 3–4 Motorola Bipolar Power Transistor Device Data BUL147 BUL147F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 180 160 t fi , FALL TIME (ns) 140 120 100 80 60 3 IC = 4.5 A 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 TJ = 25°C TJ = 125°C IC = 2 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 300 IC = 2 A TC , CROSSOVER TIME (ns) 250 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 200 150 IC = 4.5 A TJ = 25°C TJ = 125°C 3 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 100 50 Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (BUL147) I C , COLLECTOR CURRENT (AMPS) 5 ms 10 EXTENDED SOA DC (BUL147F) 0.1 1 ms 10 µs 1 µs I C , COLLECTOR CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 0 100 200 VBE(off) = 0 V 300 400 500 –1, 5 V 600 700 800 –5V TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 1 0.01 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 3–5 1.0 POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0.8 0.6 0.4 THERMAL DERATING 0.2 0.0 20 40 80 60 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data BUL147 BUL147F 5 4 3 2 1 VOLTS 0 –1 –2 –3 –4 –5 0 IB 1 2 90% IB 1 µs 3 µs 3 4 TIME 5 6 7 8 VCE dyn 1 µs dyn 3 µs 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 10% IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements +15 V 1 µF 100 Ω 3W MTP8P10 100 µF VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 Ω MJE210 COMMON 500 µF 150 Ω 3W MTP12N10 IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Iout IB RB1 VCE IB1 IC PEAK 150 Ω 3W 1 µF –Voff Table 1. Inductive Load Switching Drive Circuit 3–6 Motorola Bipolar Power Transistor Device Data BUL147 BUL147F TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 t1 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) t2 DUTY CYCLE, D = t1/t2 1 t, TIME (ms) 10 0.1 100 1000 Figure 20. Typical Thermal Response (ZθJC(t)) for BUL147 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 RθJC(t) = r(t) RθJC RθJC = 2.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.02 0.01 0.01 SINGLE PULSE 0.1 1 10 t, TIME (ms) t2 DUTY CYCLE, D = t1/t2 100 1000 10000 100000 Figure 21. Typical Thermal Response (ZθJC(t)) for BUL147F Motorola Bipolar Power Transistor Device Data 3–7 BUL147 BUL147F TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP CLIP 0.107″ MIN 0.107″ MIN HEATSINK 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 HEATSINK HEATSINK Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 3–8 Motorola Bipolar Power Transistor Device Data BUL147 BUL147F PACKAGE DIMENSIONS –T– B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR BUL44 CASE 221A–06 TO–220AB ISSUE Y –T– F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 –B– C S U H K –Y– STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER G N L D 3 PL M J R 0.25 (0.010) B M Y BUL44F CASE 221D–02 (ISOLATED TO–220 TYPE) ISSUE D Motorola Bipolar Power Transistor Device Data 3–9 BUL147 BUL147F Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 3–10 ◊ Motorola Bipolar Power Transistor Device Data *BUL147/D* BUL147/D