BUL44

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44/BUL44F have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Full Characterization at 125°C • Tight Parametric Distributions are Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL44F, Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Operating and Storage Temperature Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL — — — 50 0.4 BUL44 400 700 9.0 2.0 5.0 1.0 2.0 4500 3500 1500 25 0.2 BUL44F Unit Vdc Vdc Vdc Adc Adc Volts BUL44 * BUL44F* *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS BUL44 CASE 221A–06 TO–220AB PD TJ, Tstg Watts W/°C °C – 65 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Symbol RθJC RθJA TL BUL44 2.5 62.5 260 BUL44F 5.0 62.5 Unit °C/W °C BUL44F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Symbol Min Typ Max Unit VCEO(sus) ICEO ICES 400 — — — — — — — — — — — — 100 100 500 100 100 Vdc µAdc µAdc IEBO µAdc (continued) REV 1 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BUL44 BUL44F ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1.0 Adc, IB = 0.2 Adc) Collector–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1.0 Adc, IB = 0.2 Adc) DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) (IC = 0.4 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) (IC = 0.4 Adc IB1 = 40 mAdc VCC = 300 V) (IC = 1.0 Adc IB1 = 0.2 Adc VCC = 300 V) 1.0 µs 3.0 µs 1.0 µs 3.0 µs (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) ton toff ton toff fT COB CIB — — — — — — — — — — — 13 38 380 2.5 2.7 1.3 1.15 3.2 7.5 1.25 1.6 — 60 600 — — — — — — — — MHz pF pF VBE(sat) VCE(sat) (TC = 125°C) (TC = 125°C) hFE (TC = 125°C) (TC = 125°C) (TC = 125°C) — — — — — — 14 — 12 12 8.0 7.0 10 0.85 0.92 0.20 0.20 0.25 0.25 — 32 20 20 14 13 22 1.1 1.25 0.5 0.5 0.6 0.6 — 34 — — — — — — Vdc Vdc Symbol Min Typ Max Unit Dynamic Saturation Voltage: Determined 1.0 µs and 3.0 µs respectively after rising IB1 reaches 90% of final IB1 VCE(dsat) Vdc SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time Turn–Off Time Turn–On Time Turn–Off Time (IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 0.2 Adc, VCC = 300 V) (IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 0.2 Adc, VCC = 300 V) (IC = 1.0 Adc, IB1 = 0.2 Adc IB1 = 0.5 Adc, VCC = 300 V) (IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc, VCC = 300 V) (IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 0.2 Adc) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) — — — — — — — — 40 40 1.5 2.0 85 85 1.75 2.10 100 — 2.5 — 150 — 2.5 — ns µs ns µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time (IC = 0.8 Adc, IB1 = 160 mAdc IB2 = 160 mAdc) (IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) tfi tsi tc tfi tsi tc tfi tsi tc — — — — — — — — — — — — 70 — 2.6 — — — 125 120 0.7 0.8 110 110 110 120 1.7 2.25 180 210 — 180 — 4.2 190 350 200 — 1.25 — 200 — 175 — 2.75 — 300 — 170 — 3.8 — 300 — ns µs ns ns µs ns ns µs ns 2 Motorola Bipolar Power Transistor Device Data BUL44 BUL44F r TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 25°C 10 TJ = 125°C TJ = 25°C TJ = – 20°C 100 VCE = 5 V 10 1.0 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 1.0 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain at 1 Volt Figure 2. DC Current Gain at 5 Volts 2.0 TJ = 25°C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 IC/IB = 10 1.0 IC/IB = 5 1.0 2A 1.5 A 1A 0.4 A IC = 0.2 A 0 1.0 10 100 IB, BASE CURRENT (mA) 0.1 TJ = 25°C TJ = 125°C 1000 0.01 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage 1.2 1.1 VBE , VOLTAGE (VOLTS) C, CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.01 TJ = 125°C IC/IB = 5 IC/IB = 10 0.1 1.0 10 TJ = 25°C 1000 CIB TJ = 25°C f = 1 MHz 100 COB 10 1.0 1.0 IC, COLLECTOR CURRENT (AMPS) 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3 BUL44 BUL44F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 300 250 200 t, TIME ( µs) t, TIME (ns) IC/IB = 10 150 IC/IB = 5 100 50 0 0.2 TJ = 25°C TJ = 125°C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 2.0 IB(off) = IC/2 VCC = 300 V PW = 20 µs 6.0 5.0 4.0 3.0 2.0 1.0 0 0.2 IC/IB = 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 2.0 TJ = 25°C TJ = 125°C IC/IB = 5 IB(off) = IC/2 VCC = 300 V PW = 20 µs Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 2500 IC/IB = 5 2000 t, TIME (ns) IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 2.0 TJ = 25°C TJ = 125°C t si , STORAGE TIME (µs) 1.5 IC = 1 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1500 1000 1.0 500 0 0.4 IC/IB = 10 0.8 1.2 1.6 2.0 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C TJ = 125°C IC = 0.4 A 2.4 0.5 5.0 6.0 7.0 8.0 9.0 10 11 12 hFE, FORCED GAIN 13 14 15 Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time 250 200 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH tc 200 tc 150 t, TIME (ns) t, TIME (ns) 150 tfi 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 0.8 1.2 1.6 2.0 IC, COLLECTOR CURRENT (AMPS) 100 50 0 0.4 tfi TJ = 25°C TJ = 125°C 2.4 50 0.4 TJ = 25°C TJ = 125°C 0.8 1.2 1.6 2.0 IC, COLLECTOR CURRENT (AMPS) 2.4 Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data BUL44 BUL44F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 170 160 150 t fi , FALL TIME (ns) 140 130 120 110 100 90 80 5.0 6.0 TJ = 25°C TJ = 125°C 7.0 8.0 9.0 10 11 12 hFE, FORCED GAIN 13 14 15 IC = 1 A IC = 0.4 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 190 170 t c , CROSSOVER TIME (ns) 150 130 IC = 0.4 A 110 90 70 50 5.0 6.0 TJ = 25°C TJ = 125°C 7.0 8.0 9.0 10 11 12 hFE, FORCED GAIN 13 14 15 IC = 1 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 10 IC, COLLECTOR CURRENT (AMPS) DC (BUL44) 1.0 DC (BUL44F) 5 ms 1 ms 50 µs 10 µs 2.5 IC, COLLECTOR CURRENT (AMPS) 1 µs TC ≤ 125°C GAIN ≥ 4 LC = 500 µH 2.0 Extended SOA 1.5 1.0 0.1 –5 V 0.5 –1.5 V 0V 0 100 200 300 400 500 600 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 700 0.01 10 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 0 Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of figure 15 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. TJ(PK) may be calculated from the data in figure 20 and 21. At any case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse– biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 5 1.0 SECOND BREAK– DOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 120 60 80 100 TC, CASE TEMPERATURE (°C) 140 160 Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data BUL44 BUL44F 5 4 3 2 1 VOLTS 0 –1 –2 –3 –4 –5 0 IB 1 2 90% IB 1 µs 3 µs 3 4 TIME 5 6 7 8 VCE dyn 1 µs dyn 3 µs 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 10% IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements +15 V 1 µF 100 Ω 3W MTP8P10 100 µF VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 Ω MJE210 COMMON 500 µF 150 Ω 3W MTP12N10 IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Iout IB RB1 VCE IB1 IC PEAK 150 Ω 3W 1 µF –Voff Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data BUL44 BUL44F TYPICAL THERMAL RESPONSE 1.0 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.01 0.1 0.05 0.01 0.02 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.1 1.0 t, TIME (ms) 10 100 1000 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC1(t) Figure 20. Typical Thermal Response (ZθJC(t)) for BUL44 1.0 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC1(t) SINGLE PULSE 0.01 0.01 0.1 1.0 t, TIME (ms) 10 100 1000 Figure 21. Typical Thermal Response (ZθJC(t)) for BUL44F Motorola Bipolar Power Transistor Device Data 7 BUL44 BUL44F TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP CLIP 0.107″ MIN 0.107″ MIN HEATSINK 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 HEATSINK HEATSINK Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data BUL44 BUL44F PACKAGE DIMENSIONS –T– B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR BUL44 CASE 221A–06 TO–220AB ISSUE Y –T– F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 –B– C S U H K –Y– STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER G N L D 3 PL M J R 0.25 (0.010) B M Y BUL44F CASE 221D–02 (ISOLATED TO–220 TYPE) ISSUE D Motorola Bipolar Power Transistor Device Data 9 BUL44 BUL44F Motorola reserves the right to make changes without further notice to any products herein. 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