BUL45D2G

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application. Features http://onsemi.com POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 75 WATTS • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to • Integrated Collector−Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO VCBO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 400 700 700 12 5 10 2 4 75 0.6 −65 to 150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/_C _C BUL45D2G AY WW 1 2 3 the H2BIP Structure which Minimizes the Spread Parameter Spreads TO−220AB CASE 221A−09 STYLE 1 MARKING DIAGRAM Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds Symbol RqJC RqJA TL Max 1.65 62.5 260 Unit _C/W _C/W _C A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device BUL45D2G Package TO−220 (Pb−Free) Shipping 50 Units / Rail © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 5 1 Publication Order Number: BUL45D2/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ ÎÎ Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎ Î Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎ Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 500 V, VEB = 0) Forward Recovery Time (see Figure 27) (IF = 1 Adc, di/dt = 10 A/ms) Forward Diode Voltage (IEC = 1 Adc) DC Current Gain (IC = 0.8 Adc, VCE = 1 Vdc) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Base−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter−Base Breakdown Voltage (IEBO = 1 mA) Collector−Base Breakdown Voltage (ICBO = 1 mA) Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 2 Adc, VCE = 1 Vdc) (IC = 0.8 Adc, IB = 40 mAdc) (IC = 2 Adc, IB = 0.4 Adc) (IC = 2 Adc, IB = 0.4 Adc) (IF = 0.4 Adc, di/dt = 10 A/ms) (IF = 2 Adc, di/dt = 10 A/ms) (IEC = 0.4 Adc) (IEC = 2 Adc) Characteristic @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C http://onsemi.com BUL45D2G @ TC = 25°C @ TC = 25°C @ TC = 25°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 125°C 2 VCEO(sus) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC hFE Tfr Min 700 400 10 7 22 20 12 0.85 0.62 1.04 0.7 0.46 0.62 0.32 0.38 0.28 0.32 0.89 0.79 14.1 Typ 320 360 330 910 450 1.2 0.8 0.7 14 9.5 34 29 0.75 1 Max 100 100 500 100 100 1 0.9 1.2 1.6 1.5 0.4 0.5 1 0.9 0.5 0.6 mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc ns — V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î Î Î ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î ÎÎÎ Î Î Î Î Î ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î ÎÎÎ Î Î Î Î Î Î Î ÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎ Î Î Î Î ÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎÎÎ ÎÎ ÎÎÎ Î Î Î Î Î ÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) DYNAMIC SATURATION VOLTAGE DYNAMIC CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn−off Time Turn−on Time Turn−off Time Turn−on Time Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc Characteristic IC = 1 A IB1 = 100 mA VCC = 300 V IC = 2 A IB1 = 0.8 A VCC = 300 V IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc @ 3 ms @ 1 ms @ 3 ms @ 1 ms @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C http://onsemi.com BUL45D2G 3 VCE(dsat) Symbol Cob Cib ton ton toff toff fT tc ts tc ts tf tf 1.95 Min 2.1 0.72 1.05 1.15 1.5 0.35 2.7 Typ 225 450 80 105 90 105 340 90 110 2.9 3.1 0.4 1.5 3.9 12 3.7 9.4 95 95 90 93 50 13 2.25 Max 150 150 150 150 150 500 0.9 2.4 1.3 75 300 MHz Unit pF pF ns ns ns ns ns ns ms ms ms V V V V ms BUL45D2G TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V 80 hFE, DC CURRENT GAIN TJ = 125°C hFE, DC CURRENT GAIN TJ = 25°C 80 100 VCE = 5 V TJ = 125°C TJ = 25°C 60 60 40 TJ = - 20°C 40 TJ = - 20°C 20 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt 4 TJ = 25°C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 3 10 IC/IB = 5 TJ = 25°C 2 5A 1 1A IC = 500 mA 0 0.001 0.01 1 0.1 IB, BASE CURRENT (AMPS) 10 2A 3A 4A 1 TJ = 125°C TJ = - 20°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage 10 IC/IB = 10 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 IC/IB = 20 1 TJ = - 20°C TJ = 125°C TJ = 25°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 TJ = - 20°C TJ = 25°C TJ = 125°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 4 BUL45D2G TYPICAL STATIC CHARACTERISTICS 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 10 TJ = 25°C 1 TJ = - 20°C 1 TJ = - 20°C TJ = 125°C TJ = 25°C TJ = 125°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base−Emitter Saturation Region Figure 8. Base−Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 10 1 TJ = - 20°C TJ = 125°C TJ = 25°C 1 25°C 125°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 9. Base−Emitter Saturation Region Figure 10. Forward Diode Voltage 1000 Cib (pF) TJ = 25°C f(test) = 1 MHz BVCER (VOLTS) 1000 900 800 700 600 BVCER(sus) @ 200 mA 500 BVCER @ 10 mA TJ = 25°C 100 Cob (pF) 10 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 400 10 100 RBE (W) 1000 Figure 11. Capacitance Figure 12. BVCER = f(ICER) http://onsemi.com 5 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 1000 IBon = IBoff VCC = 300 V PW = 20 ms TJ = 125°C TJ = 25°C 5 IC/IB = 10 IBon = IBoff VCC = 300 V PW = 20 ms 800 4 t, TIME ( μs) IC/IB = 5 t, TIME (ns) 600 IC/IB = 10 3 400 2 TJ = 125°C TJ = 25°C 0.5 1 1.5 2 IC/IB = 5 200 0 0.5 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 3.5 4 1 0 2.5 3 3.5 4 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switch Time, ton Figure 14. Resistive Switch Time, toff 4 IC/IB = 5 3 t, TIME ( μs) IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH t, TIME ( μs) 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 4 3 2 2 1 TJ = 125°C TJ = 25°C 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 4 1 0 0 TJ = 125°C TJ = 25°C 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 0 Figure 15. Inductive Storage Time, tsi @ IC/IB = 5 600 500 400 t, TIME (ns) 300 200 100 100 tfi 0 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 4 0 0 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C tc t, TIME (ns) 300 400 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH 200 TJ = 125°C TJ = 25°C 1 2 3 IC, COLLECTOR CURRENT (AMPS) 4 Figure 17. Inductive Switching, tc & tfi @ IC/IB = 5 http://onsemi.com 6 Figure 18. Inductive Switching, tfi @ IC/IB = 10 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 1500 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C tsi , STORAGE TIME (μs) 4 5 TJ = 125°C TJ = 25°C IC = 1 A IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 1000 t, TIME (ns) 500 3 IC = 2 A 0 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 2 0 5 10 hFE, FORCED GAIN 15 20 Figure 19. Inductive Switching, tc @ IC/IB = 10 Figure 20. Inductive Storage Time 450 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C IC = 1 A 1400 1200 t c , CROSSOVER TIME (ns) 1000 800 600 400 200 IC = 1 A 0 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 20 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 20 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C 350 t fi , FALL TIME (ns) IC = 2 A 250 150 IC = 2 A 50 Figure 21. Inductive Fall Time Figure 22. Inductive Crossover Time 3000 t fr , FORWARD RECOVERY TIME (ns) IB1 = IB2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 360 dI/dt = 10 A/ms TC = 25°C 340 2000 t, TIME (ns) IB = 50 mA 1000 IB = 100 mA IB = 200 mA IB = 500 mA IB = 1 A 0 0.5 320 300 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 3.5 4 0 0.5 1 1.5 IF, FORWARD CURRENT (AMP) 2 Figure 23. Inductive Storage Time, tsi http://onsemi.com 7 Figure 24. Forward Recovery Time tfr BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 10 VCE dyn 1 ms dyn 3 ms 0V 9 8 7 6 5 4 90% IB 1 ms IB 3 ms TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc tsi IC 90% IC tfi 10% IC Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements VFRM VF tfr 0.1 VF 0 VFR (1.1 VF unless otherwise specified) VF IF 10% IF 0 2 4 6 8 10 Figure 27. tfr Measurements http://onsemi.com 8 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W MTP8P10 100 mF VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 W 500 mF 150 W 3W RB2 MTP12N10 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA IB2 Iout IB RB1 VCE IB1 IC PEAK MJE210 COMMON 1 mF -Voff Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL CHARACTERISTICS 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 6 5 4 3 2 1 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 200 300 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 TC ≤ 125°C GAIN ≥ 5 LC = 2 mH 10 10 ms 1 DC 0.1 5 ms 1 ms 1 ms EXTENDED SOA -5 V 0V -1.5 V 0.01 Figure 28. Forward Bias Safe Operating Area Figure 29. Reverse Bias Safe Operating Area http://onsemi.com 9 BUL45D2G TYPICAL CHARACTERISTICS 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 80 120 60 100 TC, CASE TEMPERATURE (°C) 140 160 Figure 30. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 P(pk) RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 Figure 31. Typical Thermal Response (ZqJC(t)) for BUL45D2 http://onsemi.com 10 BUL45D2G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 −T− B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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