BUL45G

BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Features http://onsemi.com • Improved Efficiency Due to: ♦ ♦ • • • Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On−State and Switching Operations) ♦ Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ) ♦ @ IC = 2.0 A, IB1 = IB2 = 0.4 A Full Characterization at 125°C Tight Parametric Distributions Consistent Lot−to−Lot These Devices are Pb−Free and are RoHS Compliant* POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 35 AND 75 WATTS TO−220AB CASE 221A−09 STYLE 1 MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature − Continuous − Peak (Note 1) Symbol VCEO VCES VEBO IC ICM IB PD TJ, Tstg Value 400 700 9.0 5.0 10 2.0 75 0.6 −65 to 150 Unit Vdc Vdc Vdc Adc Adc W W/_C _C BUL45G AY WW 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 1.65 62.5 Unit _C/W _C/W BUL45 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. ORDERING INFORMATION Device BUL45G Package TO−220 (Pb−Free) Shipping 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 8 1 Publication Order Number: BUL45/D BUL45G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (IC = 2.0 Adc, IB = 0.4 Adc) Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (TC = 125°C) Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc) (TC = 125°C) DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) (IC = 1.0 Adc IB1 = 100 mAdc VCC = 300 V) (IC = 2.0 Adc IB1 = 400 mAdc VCC = 300 V) 1.0 ms 3.0 ms 1.0 ms 3.0 ms (TC = 125°C) (TC = 125°C) (TC = 125°C) (TC = 125°C) ton toff VCE (Dyn sat) fT Cob Cib − − − − − − − − − − − − − − − 70 − 2.6 − − − − − − − − − − − − 12 50 920 1.75 4.4 0.5 1.0 1.85 6.0 0.5 1.0 75 120 2.8 3.5 − 200 − 4.2 230 400 110 100 1.1 1.5 170 170 80 0.6 175 — 75 1200 − − − − − − − − 110 − 3.5 − 170 − 3.8 − 350 − 150 − 1.7 − 250 − 120 0.9 300 ns ms MHz pF pF (TC = 125°C) (TC = 125°C) VBE(sat) − − − − − − 14 − 7.0 5.0 10 0.84 0.89 0.175 0.150 0.25 0.275 − 32 14 12 22 1.2 1.25 0.25 − 0.4 − 34 − − − − Vdc VCEO(sus) ICEO ICES IEBO 400 − − − − − − − − − − 100 10 100 100 Vdc mAdc mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VCE(sat) hFE Vdc Vdc − Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) Vdc SWITCHING CHARACTERISTICS: Resistive Load Turn−On Time Turn−Off Time (IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc Pulse Width = 20 ms, (TC = 125°C) Duty Cycle < 20% VCC = 300 V (TC = 125°C) (IC = 2.0 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc) SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 mH, Vclamp = 300 Vdc) Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time (TC = 125°C) (TC = 125°C) (TC = 125°C) (IC = 1.0 Adc, IB1 = 100 mAdc IB2 = 0.5 Adc) (TC = 125°C) (TC = 125°C) (TC = 125°C) (IC = 2.0 Adc, IB1 = 250 mAdc IB2 = 2.0 Adc) (TC = 125°C) (TC = 125°C) (TC = 125°C) tfi tsi tc tfi tsi tc tfi tsi tc ns ms ns ns ms ns ns ms ns http://onsemi.com 2 BUL45G TYPICAL STATIC CHARACTERISTICS 100 TJ = 25°C TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V TJ = 125°C TJ = - 20°C 10 100 TJ = 25°C VCE = 5 V TJ = - 20°C 10 1 0.01 0.10 1.00 10.00 1 0.01 0.10 1.00 10.00 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt 2.0 TJ = 25°C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 1.5 10 Figure 2. DC Current Gain at @ 5 Volts 1.0 1.0 1 A 1.5 2 A A 3A 4A 5A 6A 0.1 IC/IB = 10 IC/IB = 5 TJ = 25°C TJ = 125°C 0.10 1.00 10.00 0.5 IC = 0.5 A 0 0.01 0.10 1.00 10.00 0.01 0.01 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector−Emitter Saturation Region Figure 4. Collector−Emitter Saturation Voltage 1.1 1.0 VBE , VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.01 0.10 1.00 TJ = 25°C 10000 Cib TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) 1000 100 Cob TJ = 125°C 10 IC/IB = 10 IC/IB = 5 10.00 1 1 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 3 BUL45G TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1200 1000 800 t, TIME (ns) t, TIME (ns) 600 400 200 IC/IB = 5 0 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) 0 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 IB(off) = IC/2 VCC = 300 V PW = 20 ms 3000 TJ = 25°C TJ = 125°C 2500 2000 IC/IB = 10 1500 1000 500 IC/IB = 5 TJ = 25°C TJ = 125°C IB(off) = IC/2 VCC = 300 V PW = 20 ms Figure 7. Resistive Switching, ton 3500 3000 2500 t, TIME (ns) 2000 1500 1000 500 0 0 TJ = 25°C TJ = 125°C 1 2 IC/IB = 5 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH Figure 8. Resistive Switching, toff 3500 3000 t si , STORAGE TIME (ns) 2500 2000 1500 1000 IC/IB = 10 3 4 5 IC = 2 A 500 3 4 5 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN TJ = 25°C TJ = 125°C IB(off) = IC/2 LC = 200 mH VZ = 300 V VCC = 15 V IC = 1 A IC, COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 300 250 200 t, TIME (ns) t, TIME (ns) 150 100 50 0 0 VCC = 15 V IB(off) = IC/2 LC = 200 mH VZ = 300 V 1 200 tc tc 150 100 50 tfi TJ = 25°C TJ = 125°C 5 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 0 1 tfi 2 3 4 IC, COLLECTOR CURRENT (AMPS) 0 TJ = 25°C TJ = 125°C 5 2 3 4 IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc & tfi, IC/IB = 5 Figure 12. Inductive Switching, tc & tfi, IC/IB = 10 http://onsemi.com 4 BUL45G TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 150 140 130 t fi , FALL TIME (ns) 120 110 100 90 80 70 3 4 IC = 2 A 50 5 6 7 8 9 10 11 12 13 14 15 3 4 5 hFE, FORCED GAIN IC = 1 A TJ = 25°C TJ = 125°C IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 300 VCC = 15 V VZ = 300 V IB(off) = IC/2 LC = 200 mH t c , CROSSOVER TIME (ns) 250 IC = 1 A 200 150 100 TJ = 25°C TJ = 125°C 6 7 8 IC = 2 A 9 10 11 12 13 14 15 hFE, FORCED GAIN Figure 13. Inductive Fall Time, tfi(hFE) Figure 14. Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (BUL45) I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 10 5 ms 1 ms 50 ms 10 ms 1 ms 5 4 3 2 1 0 300 VBE(off) = 0 V -1.5 V 800 -5 V 6 TC ≤ 125°C IC/IB ≥ 4 LC = 500 mH 1.0 EXTENDED SOA 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 400 700 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse−biased. The safe level is specified as a reverse−biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1.0 POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating http://onsemi.com 5 BUL45G 5 4 3 2 1 VOLTS 0 -1 -2 -3 -4 -5 0 IB 1 2 90% IB 1 ms 3 ms 3 4 TIME 5 6 7 8 VCE dyn 1 ms dyn 3 ms 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 10% IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements +15 V 1 mF 100 W 3W MTP8P10 Figure 19. Inductive Switching Measurements 100 mF VCE PEAK MTP8P10 VCE RB1 IB1 Iout A IB IB2 IC PEAK 150 W 3W MPF930 MUR105 +10 V MPF930 50 W COMMON 500 mF 150 W 3W MJE210 MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 1 mF -Voff Table 1. Inductive Load Switching Drive Circuit r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL THERMAL RESPONSE 1.00 D = 0.5 0.2 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.10 1.00 t, TIME (ms) 10.00 RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100.00 1000.00 Figure 20. Typical Thermal Response (ZqJC(t)) for BUL45 http://onsemi.com 6 BUL45G The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by ON Semiconductor applications was built to demonstrate how well these devices operate. The circuit and detailed component list are provided below. 22 mF C1 385 V MUR150 D3 IC Q1 47 W D5 1000 V C5 400 V 0.1 mF D10 D9 470 kW 1W T1A 15 mF C4 TUBE T1B D8 D7 D1 1N4007 IC C2 CTN 0.1 mF 100 V D2 AC LINE 220 V 1N5761 1W MUR150 D4 5.5 mH D6 Q2 47 W L C3 1000 V 10 nF C6 400 V 0.1 mF FUSE Components Lists Q1 D1 D2 D3 D5 D7 CTN L = = = = = = = = Q2 = BUL45 Transistor 1N4007 Rectifier 1N5761 Rectifier D4 = MUR150 D6 = MUR105 D8 = D9 = D10 = 1N400 47 W @ 25°C RM10 core, A1 = 400, B51 (LCC) 75 turns, wire ∅ = 0.6 mm FT10 toroid, T4A (LCC) Primary: 4 turns Secondaries: T1A: 4 turns Secondaries: T1B: 4 turns All resistors are 1/4 Watt, ±5% R1 = 470 kW R2 = R3 = 47 W R4 = R5 = 1 W (these resistors are optional, and might be replaced by a short circuit) C1 = 22 mF/385 V C2 = 0.1 mF C3 = 10 nF/1000 V C4 = 15 nF/1000 V C5 = C6 = 0.1 mF/400 V T1 = NOTES: 1. Since this design does not include the line input filter, it cannot be used “as−is” in a practical industrial circuit. 2. The windings are given for a 55 Watt load. For proper operation they must be re−calculated with any other loads. Figure 21. Application Example http://onsemi.com 7 BUL45G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 −T− B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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