BUT11

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This literature is subject to all applicable copyright laws and is not for resale in any manner. BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A 850 1000 Collector-Emitter Voltage : BUT11 : BUT11A 400 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICES Parameter * Collector-Emitter Sustaining Voltage : BUT11 : BUT11A Test Condition IC = 100mA, IB = 0 Min. Typ. Max. Units 400 450 V V Collector Cut-off Current : BUT11 : BUT11A VCE = 850V, VBE = 0 1 1 mA mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sat) Collector-Emitter Saturation Voltage : BUT11 : BUT11A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A 1.5 1.5 V V Base-Emitter Saturation Voltage : BUT11 : BUT11A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A 1.3 1.3 V V 1 µs 4 µs 0.8 µs VBE(sat) tON Turn On Time tSTG Storage Time tF Fall Time VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case ©2001 Fairchild Semiconductor Corporation Typ Max 1.25 Units °C/W Rev. B1, August 2001 BUT11/11A Typical Characteristics 1000 10 IC = 5 IB VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 5V 100 10 1 0.01 0.1 1 1 0.1 VCE(sat) 0.01 0.01 10 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 10 IC[A], COLLECTOR CURRENT VBE(sat)[V], SATURATION VOLTAGE IC = 5 IB VBE(sat) 1 0.1 0.01 0.01 0.1 1 8 6 4 2 0 IC[A], COLLECTOR CURRENT 200 400 600 800 1000 1200 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe OPerating Area 120 10 Ic MAX (Continuous) 1 0.1 BUT11A BUT11 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 80 60 40 20 0 0.01 1 PC[W], POWER DISSIPATION 100 C D IC[A], COLLECTOR CURRENT BUT11A BUT11 0 10 1000 0 25 50 75 100 125 150 175 O TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B1, August 2001 BUT11/11A Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. B1, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. 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