BYV32-200G

BYV32-200 Switch‐mode Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 16 A Total (8 A Per Diode Leg) These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS trr = 35 ns Applications • Power Supply − Output Rectification • Power Management • Instrumentation 1 2, 4 3 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C MARKING DIAGRAM 4 TO−220 CASE 221 STYLE 6 1 2 AYWW BYV32-200G AKA 3 A Y WW BYV32−200 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping BYV32−200G TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 5 1 Publication Order Number: BYV32−200/D BYV32−200 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Current, TC = 156°C Per Leg Total Device IF(AV) A 8.0 16 Peak Rectified Forward Current (Square Wave, 20 kHz), TC = 154°C − Per Diode Leg IFM 16 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A TJ, Tstg −65 to +175 °C Operating Junction Temperature and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60 Min Typical Max − − 0.74 1.01 0.85 1.15 − − 21 3.5 600 50 − − − − 35 25 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (iF = 5.0 A, Tj = 100°C) (iF = 20 A, Tj = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 100°C) (Rated dc Voltage, Tj = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) trr Unit V mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0% www.onsemi.com 2 BYV32−200 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 70 50 30 TJ = 175°C 100°C 10 7.0 175°C 100°C 10 0.1 0.2 0.3 0.4 5.0 0.5 0.6 0.7 0.8 0.9 1.0 1.3 1.4 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage 3.0 800 400 200 80 40 20 8.0 4.0 2.0 2.0 1.0 0.7 0.5 0.3 0.2 TJ = 175°C 100°C 0.8 0.4 0.2 0.08 0.04 0.02 25°C 0 40 20 0.1 0.2 0.3 0.5 0.4 0.7 0.6 0.8 0.9 1.0 1.1 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) 1.2 Figure 3. Typical Reverse Current, Per Leg* vF, INSTANTANEOUS VOLTAGE (VOLTS) * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. Figure 1. Typical Forward Voltage, Per Leg 20 20 IF(AV), AVERAGE FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) 25°C 1.0 25°C IR, REVERSE CURRENT (m A) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 100 18 16 14 12 10 dc 8.0 6.0 SQUARE WAVE 4.0 2.0 0 140 145 150 155 160 165 170 175 180 RqJA = 16°C/W RqJA = 60°C/W (NO HEATSINK) 18 16 14 dc 12 10 8.0 SQUARE WAVE 6.0 dc 4.0 SQUARE WAVE 2.0 0 0 TC, CASE TEMPERATURE (°C) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg www.onsemi.com 3 175 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) BYV32−200 24 TJ = 175°C 22 20 SQUARE WAVE 18 16 dc 14 12 10 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 14 12 16 18 20 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Power Dissipation, Per Leg C, CAPACITANCE (pF) 1000 300 TJ = 25°C 100 30 10 1.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7. Typical Capacitance, Per Leg 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 8. Thermal Response, Junction−to−Ambient www.onsemi.com 4 10 100 1000 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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