BYW51-200

BYW51−200 SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 16 A Total (8 A Per Diode Leg) Pb−Free Packages are Available* http://onsemi.com ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS trr = 35 ns 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C MARKING DIAGRAM TO−220AB CASE 221A PLASTIC AYWW BYW51−200G AKA A Y WW BYW51−200 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device BYW51−200 BYW51−200G Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 August, 2006 − Rev. 3 Publication Order Number: BYW51−200/D BYW51−200 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TC = 156°C Per Leg Total Device Peak Rectified Forward Current (Square Wave, 20 kHz), TC = 153°C − Per Diode Leg Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Symbol VRRM VRWM VR IF(AV) 8.0 16 IFM 16 A Value 200 Unit V A IFSM TJ, Tstg 100 −65 to +175 A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient Conditions Min. Pad Min. Pad Symbol RqJC RqJA Value 3.0 60.0 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, Tj = 100°C) (iF = 8.0 A, Tj = 25°C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 100°C) (Rated dc Voltage, Tj = 25°C) Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/s) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0% Symbol vF − − iR − − trr − − 35 25 21 3.8 1000 10 ns 0.8 0.89 0.89 0.97 mA Min Typical Max Unit V http://onsemi.com 2 BYW51−200 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 70 50 100 175°C 100°C 10 25°C 30 20 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 175°C 10 7.0 5.0 100°C 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 25°C Figure 2. Maximum Forward Voltage 3.0 IR, REVERSE CURRENT (m A) 2.0 800 400 200 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) 20 40 60 TJ = 175°C 1.0 0.7 0.5 100°C 25°C 0.3 0.2 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current, Per Leg* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 20 IF(AV), AVERAGE FORWARD CURRENT (A) 18 16 14 12 10 8.0 6.0 4.0 2.0 0 0 SQUARE WAVE 25 50 75 100 125 150 175 SQUARE WAVE dc dc RqJA = 16°C/W RqJA = 60°C/W (NO HEATSINK) Figure 1. Typical Forward Voltage, Per Leg IF(AV), AVERAGE FORWARD CURRENT (A) 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 140 145 150 155 160 165 170 175 180 TC, CASE TEMPERATURE (°C) SQUARE WAVE dc TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg http://onsemi.com 3 BYW51−200 PF(AV), AVERAGE POWER DISSIPATION (W) 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 1.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 TJ = 175°C C, CAPACITANCE (pF) SQUARE WAVE dc 300 1000 TJ = 25°C 100 30 Figure 6. Power Dissipation, Per Leg Figure 7. Typical Capacitance, Per Leg http://onsemi.com 4 BYW51−200 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AD −T− B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.147 G 0.095 0.105 H 0.110 0.155 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050 V 0.045 −−− Z −−− 0.080 STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 Q 123 A U K H Z L V G D N R J ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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