BZG03C150G

Voltage Regulators, Peak Power Zener Surge Rated, 600 Watt BZG03C15 Series The SMA series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable SURMETICt package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. This new line of 1.5 watt Zener diodes offers the following advantages: Specification Features • • • • • • • • Standard Zener Breakdown Voltage − 15 V to 150 V Peak Power 600 Watts @ 100 ms ESD Rating of Class 3 (> 16 KV) per Human Body Model Response Time is Typically < 1.0 ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com PLASTIC SURFACE MOUNT ZENER VOLTAGE REGULATORS 600 WATTS PEAK POWER CATHODE ANODE SMA CASE 403D MARKING DIAGRAM Mechanical Characteristics CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are XXX AYWWG readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by molded polarity notch or polarity band XXX A Y WW G MOUNTING POSITION: Any = Specific Device Code = (See Table on Page 2) = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† BZG03C15G SMA (Pb−Free) 5000/Tape & Reel BZG03C150G SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 September, 2019 − Rev. 5 1 Publication Order Number: BZG03C15/D BZG03C15 Series MAXIMUM RATINGS Rating Symbol Value Unit PZSM 600 W Peak Power Dissipation (Note 1) @ TL = 25°C, tP = 100 ms DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance, Junction−to−Lead PD 1.5 W RqJL 20 50 mW/°C °C/W Forward Surge Current (Note 3) @ TA = 25°C IFSM 40 A TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 100 ms, non−repetitive square pulse 2. 1 in. square copper pad, FR−4 board 3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum SYMBOLS DEFINITIONS I Symbol IF VC VBR VRWM IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR V IR VF IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR IPP Parameter Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Uni−Directional Diode ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max. @ IF = 0.5 A for all types) Breakdown Voltage VRWM (Note 4) IR @ VRWM Volts mA Min Nom VBR (V) (Note 5) Zzt @ IT @ IT Typ Max Max mA W W Device* Device Marking BZG03C15, G G15 11 1 13.8 15.0 15.6 50 5.0 10.0 BZG03C150, G G150 110 1 138 150 156 5 130 300 4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level 5. VBR measured at pulse test current IT at an ambient temperature of 25°C *The “G’’ suffix indicates Pb−Free package available. www.onsemi.com 2 BZG03C15 Series RATING AND TYPICAL CHARACTERISTIC CURVES 10,000 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2. TA = 25°C 10 C, CAPACITANCE (pF) Ppk , PEAK POWER (kW) 100 1 0.1 10-4 0.001 0.01 0.1 tP, PULSE WIDTH (ms) 1 MEASURED AT ZERO BIAS 1,000 MEASURED AT STAND-OFF VOLTAGE, VWM 100 10 10 1 Figure 1. Pulse Rating Curve PD , MAXIMUM POWER DISSIPATION (WATTS) PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT 10 x 1000 WAVEFORM AS DEFINED BY R.E.A. 80 60 40 20 0 0 40 2 5 10 20 50 V(BR), BREAKDOWN VOLTAGE (VOLTS) 100 200 Figure 3. Typical Junction Capacitance 120 100 TJ = 25°C f = 1 MHz Vsig = 50 mVp-p 5 4 @ TL = 75°C PD = 1.5 W 3 2 @ TA = 25°C PD = 0.5 W 1 0 0 200 80 120 160 TA, AMBIENT TEMPERATURE (°C) 6 25 75 50 100 T, TEMPERATURE (°C) 125 Figure 4. Steady State Power Derating Figure 2. Pulse Derating Curve SURMETIC is a trademark of Semiconductor Components Industries, LLC. www.onsemi.com 3 150 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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