Voltage Regulators, Peak
Power Zener Surge Rated,
600 Watt
BZG03C15 Series
The SMA series is supplied in ON Semiconductor’s exclusive,
cost-effective, highly reliable SURMETICt package and is ideally
suited for use in communication systems, automotive, numerical
controls, process controls, medical equipment, business machines,
power supplies and many other industrial/consumer applications.
This new line of 1.5 watt Zener diodes offers the following
advantages:
Specification Features
•
•
•
•
•
•
•
•
Standard Zener Breakdown Voltage − 15 V to 150 V
Peak Power 600 Watts @ 100 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Response Time is Typically < 1.0 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
PLASTIC SURFACE MOUNT
ZENER VOLTAGE
REGULATORS
600 WATTS PEAK POWER
CATHODE
ANODE
SMA
CASE 403D
MARKING DIAGRAM
Mechanical Characteristics
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are
XXX
AYWWG
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by molded polarity notch or polarity
band
XXX
A
Y
WW
G
MOUNTING POSITION: Any
= Specific Device Code
= (See Table on Page 2)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
BZG03C15G
SMA
(Pb−Free)
5000/Tape & Reel
BZG03C150G
SMA
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
September, 2019 − Rev. 5
1
Publication Order Number:
BZG03C15/D
BZG03C15 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
PZSM
600
W
Peak Power Dissipation (Note 1) @ TL = 25°C, tP = 100 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
PD
1.5
W
RqJL
20
50
mW/°C
°C/W
Forward Surge Current (Note 3) @ TA = 25°C
IFSM
40
A
TJ, Tstg
−65 to +150
°C
Operating and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 100 ms, non−repetitive square pulse
2. 1 in. square copper pad, FR−4 board
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum
SYMBOLS DEFINITIONS
I
Symbol
IF
VC VBR VRWM
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
V
IR VF
IT
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
IPP
Parameter
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Uni−Directional Diode
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max. @ IF = 0.5 A for all types)
Breakdown Voltage
VRWM
(Note 4)
IR @ VRWM
Volts
mA
Min
Nom
VBR (V) (Note 5)
Zzt @ IT
@ IT
Typ
Max
Max
mA
W
W
Device*
Device
Marking
BZG03C15, G
G15
11
1
13.8
15.0
15.6
50
5.0
10.0
BZG03C150, G
G150
110
1
138
150
156
5
130
300
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
5. VBR measured at pulse test current IT at an ambient temperature of 25°C
*The “G’’ suffix indicates Pb−Free package available.
www.onsemi.com
2
BZG03C15 Series
RATING AND TYPICAL CHARACTERISTIC CURVES
10,000
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
TA = 25°C
10
C, CAPACITANCE (pF)
Ppk , PEAK POWER (kW)
100
1
0.1
10-4
0.001
0.01
0.1
tP, PULSE WIDTH (ms)
1
MEASURED AT
ZERO BIAS
1,000
MEASURED AT
STAND-OFF
VOLTAGE, VWM
100
10
10
1
Figure 1. Pulse Rating Curve
PD , MAXIMUM POWER DISSIPATION (WATTS)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
80
60
40
20
0
0
40
2
5
10
20
50
V(BR), BREAKDOWN VOLTAGE (VOLTS)
100 200
Figure 3. Typical Junction Capacitance
120
100
TJ = 25°C
f = 1 MHz
Vsig = 50 mVp-p
5
4
@ TL = 75°C
PD = 1.5 W
3
2
@ TA = 25°C
PD = 0.5 W
1
0
0
200
80
120
160
TA, AMBIENT TEMPERATURE (°C)
6
25
75
50
100
T, TEMPERATURE (°C)
125
Figure 4. Steady State Power Derating
Figure 2. Pulse Derating Curve
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
www.onsemi.com
3
150
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
STYLE 1
SMA
CASE 403D
ISSUE J
STYLE 2
SCALE 1:1
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
DATE 22 OCT 2021
STYLE 2:
NO POLARITY
GENERIC
MARKING DIAGRAM*
xxxx
AYWWG
STYLE 1
xxxx
A
Y
WW
G
xxxx
AYWWG
STYLE 2
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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