BZX84C2V4ET3

BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features http://onsemi.com 3 Cathode 1 Anode • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) Pb−Free Packages are Available 3 1 2 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: SOT−23 CASE 318 STYLE 8 MARKING DIAGRAM 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 1 xxx M G G MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol Ppk PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −65 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max 225 Unit W xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device BZX84CxxxET1 BZX84CxxxET1G BZX84CxxxET3 BZX84CxxxET3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping † 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2005 1 August, 2005 − Rev. 5 Publication Order Number: BZX84C2V4ET1/D BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IR VR IF VF QVZ C Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz VZ VR IR VF IZT V IF I Zener Voltage Regulator http://onsemi.com 2 BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (V) @ IZT1 = 5 mA (Note 4) Device* BZX84C2V4ET1, G BZX84C2V7ET1, G BZX84C3V0ET1, G BZX84C3V3ET1, G BZX84C3V6ET1, G BZX84C3V9ET1, G BZX84C4V3ET1, G BZX84C4V7ET1, G BZX84C5V1ET1, G BZX84C5V6ET1, G BZX84C6V2ET1, G BZX84C6V8ET1, G BZX84C7V5ET1, G BZX84C8V2ET1, G BZX84C9V1ET1, G BZX84C10ET1, G BZX84C11ET1, G BZX84C12ET1, G BZX84C13ET1, G BZX84C15ET1, G BZX84C16ET1, G BZX84C18ET1, G BZX84C20ET1, G BZX84C22ET1, G BZX84C24ET1, G Device Marking BA1 BA2 BA3 BA4 BA5 BA6 BA7 BA9 BB1 BB2 BB3 BB4 BB5 BB6 BB7 BB8 BB9 BC1 BC2 BC3 BC4 BC5 BC6 BC7 BC8 Min 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 Nom 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 VZ2 (V) @ IZT2 = 1 mA (Note 4) Min 1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 Max 2.1 2.4 2.7 2.9 3.3 3.5 4.0 4.7 5.3 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14 15.5 17 19 21.1 23.2 25.5 VZ3 (V) @ IZT3=20 mA (Note 4) Min 2.6 3.0 3.3 3.6 3.9 4.1 4.4 4.5 5.0 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.5 13.9 15.4 16.9 18.9 20.9 22.9 Max 3.2 3.6 3.9 4.2 4.5 4.7 5.1 5.4 5.9 6.3 6.8 7.4 8.0 8.8 9.7 10.7 11.8 12.9 14.2 15.7 17.2 19.2 21.4 23.4 25.7 Max Reverse Leakage Current V IR @R (V) mA 50 20 10 5.0 5.0 3.0 3.0 3.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14 15.4 16.8 qVZ C (pF) (mV/k) @ @ IZT1=5 mA VR = 0 f= Min Max 1 MHz −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 0 0 0 0 0 −2.5 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10 11 13 14 16 18 20 22 450 450 450 450 450 450 450 260 225 200 185 155 140 135 130 130 130 130 120 110 105 100 85 85 80 ZZT1 (W) @ IZT1 = 5 mA 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 ZZT2 (W) @ IZT2 = 1 mA 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 ZZT3 (W) @ IZT3= 20 mA 50 50 50 40 40 30 30 15 15 10 6 6 6 6 8 10 10 10 15 20 20 20 20 25 25 VZ1 Below @ IZT1 = 2 mA Device BZX84C27ET1, G BZX84C30ET1 BZX84C33ET1, G BZX84C36ET1, G BZX84C39ET1, G BZX84C43ET1, G BZX84C47ET1, G BZX84C51ET1, G BZX84C56ET1, G BZX84C62ET1, G BZX84C68ET1, G BZX84C75ET1, G Device Marking BC9 BD1 BD2 BD3 BD4 BK6 BD5 BD6 BD7 BD8 BD9 BE1 Min 25.1 28 31 34 37 40 44 48 52 58 64 70 Nom 27 30 33 36 39 43 47 51 56 62 68 75 Max 28.9 32 35 38 41 46 50 54 60 66 72 79 ZZT1 Below @ IZT1 = 2 mA 80 80 80 90 130 150 170 180 200 215 240 255 VZ2 Below @ IZT2 = 0.1 mA Min 25 27.8 30.8 33.8 36.7 39.7 43.7 47.6 51.5 57.4 63.4 69.4 Max 28.9 32 35 38 41 46 50 54 60 66 72 79 ZZT2 Below @ IZT4 = 0.5 mA 300 300 325 350 350 375 375 400 425 450 475 500 VZ3 Below @ IZT3 = 10 mA Min 25.2 28.1 31.1 34.1 37.1 40.1 44.1 48.1 52.1 58.2 64.2 70.3 Max 29.3 32.4 35.4 38.4 41.5 46.5 50.5 54.6 60.8 67 73.2 80.2 ZZT3 Below @ IZT3 = 10 mA 45 50 55 60 70 80 90 100 110 120 130 140 Max Reverse Leakage Current V IR @R (V) mA 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 qVZ (mV/k) Below @ IZT1 = 2 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42 46.6 52.2 58.8 65.6 73.4 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 C (pF) @ VR =0 f= 1 MHz 70 70 70 70 45 40 40 40 40 35 35 35 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 8 7 6 5 4 3 2 1 0 VZ @ IZT TYPICAL TC VALUES 100 θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° TYPICAL TC VALUES θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° VZ @ IZT 10 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 Z ZT, DYNAMIC IMPEDANCE (Ω ) IZ = 1 mA TJ = 255C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 100 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 0.5 75°C 25°C 0°C 1.1 1.2 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Zener Impedance Figure 4. Typical Forward Voltage http://onsemi.com 4 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 1000 0 V BIAS C, CAPACITANCE (pF) 1 V BIAS TA = 25°C 1000 I R , LEAKAGE CURRENT (μA) 100 10 1 0.1 +150°C 100 BIAS AT 50% OF VZ NOM 10 0.01 + 25°C −55°C 0 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 0.001 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.00001 Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 100 100 I Z, ZENER CURRENT (mA) TA = 25°C TA = 25°C 10 I Z , ZENER CURRENT (mA) 10 1 1 0.1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 12 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 20 40 tP tr Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms 60 80 t, TIME (ms) Figure 9. 8 × 20 ms Pulse Waveform http://onsemi.com 5 BZX84C2V4ET1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. DIM A A1 b c D E e L HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 3 1 2 E HE e A b A1 L C STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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